Biblio

Export 162 results:
[ Author(Asc)] Title Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
S
R. M. Swanson, “Approaching the 29% limit efficiency of silicon solar cells”, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp 889-94, 2005.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
M. J. Stocks, Carr, A. J., 와/과 Blakers, A. W., “Texturing of polycrystalline silicon”, Solar Energy Materials and Solar Cells, vol 40, pp 33 - 42, 1996.
A. B. Sproul 와/과 Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol 70, p 846, 1991.
A. B. Sproul, Green, M. A., 와/과 Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol 57, p 255, 1990.
A. B. Sproul 와/과 Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol 70, pp 846-854, 1991.
A. B. Sproul, “Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors”, Journal of Applied Physics, vol 76, pp 2851-2854, 1994.
F. M. Smits, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol 34, pp 711-718, 1958.
R. A. Sinton 와/과 Cuevas, A., “A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization”, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp 1152–1155.
R. A. Sinton 와/과 Swanson, R. M., “Recombination in highly injected silicon”, Electron Devices, IEEE Transactions on, vol 34, pp 1380 - 1389, 1987.
R. A. Sinton 와/과 Cuevas, A., “Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data”, Applied Physics Letters, vol 69, pp 2510-2512, 1996.
W. Shockley 와/과 Queisser, H. J., “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells”, Journal of Applied Physics, vol 32, pp 510-519, 1961.
W. Shockley 와/과 Read, W. T., “Statistics of the Recombinations of Holes and Electrons”, Physical Review, vol 87, p 835, 1952.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
J. N. Shive, “Semiconductor Devices, Chapter 8”, New Jersey: Van Nostrand, 1959.
H. B. Serreze, “Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations”, 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, pp 1-8, 1978.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
R. Sekuler 와/과 Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
D. Schroder, Semiconductor material and device characterization, 3rd editionrd ed. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
J. Schmidt, Kerr, M. J., 와/과 Altermatt, P. P., “Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities”, Journal of Applied Physics, vol 88, pp 1494-1497, 2000.
R
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., 와/과 Narayanan, S., “Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells”, 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
J. R. G. Ross 와/과 Smokler, M. I., “Flat-Plate Solar Array Project Final Report”, pp 86-31, 1986.
R. G. Ross, “Flat-Plate Photovoltaic Array Design Optimization”, 14th IEEE Photovoltaic Specialists Conference. San Diego, CA, pp 1126-1132, 1980.
S. J. Robinson, Aberle, A. G., 와/과 Green, M. A., “Departures from the principle of superposition in silicon solar cells”, Journal of Applied Physics, vol 76, p 7920, 1994.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., 와/과 Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol 86, 호 16, 2012.

Pages