Biblio
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Author Title [ Type] Year Filters: First Letter Of Title is I and Author is A. B. Sproul [Clear All Filters]
“Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol 57, p 255, 1990.
, “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol 70, pp 846-854, 1991.
, “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol 70, p 846, 1991.
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