3.0.CO;2-3
%0 Conference Proceedings
%B 21st IEEE Photovoltaic Specialists Conference
%D 1990
%T Photovoltaics: Coming of Age
%A Martin A Green
%X The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.
%B 21st IEEE Photovoltaic Specialists Conference
%C Orlando, USA
%P 1-8
%8 05/1990
%G eng
%U http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582
%R 10.1109/PVSC.1990.111582
%0 Book
%D 1985
%T Perception
%A Sekuler, R.
%A Blake, R.
%I Alfred A. Knopf Inc
%C New York
%G eng
%0 Book
%D 1984
%T Photovoltaics for Residential Applications
%A SERI
%I Solar Energy Research Institute
%C Golden, Colorado
%0 Journal Article
%J On Phosphorus Diffusion in Silicon
%D 1983
%T On Phosphorus Diffusion in Silicon
%A S.M. Hu
%A P. Fahey
%A P. Sutton
%B On Phosphorus Diffusion in Silicon
%V 54
%P 6912-6922
%G eng
%0 Journal Article
%J IEEE Transactions on Electron Devices
%D 1977
%T Physical operation of back-surface-field silicon solar cells
%A Fossum, J.G.
%X Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.
%B IEEE Transactions on Electron Devices
%V 24
%P 322 - 325
%8 04/1977
%G eng
%0 Journal Article
%J Bell Systems Technical Journal
%D 1952
%T Photoelectric Properties of Tonically Bombarded Silicon
%A Kingsbury, E.F.
%A Ohl, R.S.
%B Bell Systems Technical Journal
%V 31
%P 802-815
%G eng