%0 Conference Proceedings %B 34th IEEE Photovoltaic Specialists Conference %D 2009 %T METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY %A F. Dimroth %A W. Guter %A J. Schöne %A E. Welser %A M. Steiner %A E. Oliva %A A. Wekkeli %A G. Siefer %A S.P. Philipps %A A.W. Bett %B 34th IEEE Photovoltaic Specialists Conference %G eng %0 Conference Proceedings %B 16th European Photovoltaic Solar Energy Conference %D 2000 %T Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques %A A.S.H. van der Heide %A et al %B 16th European Photovoltaic Solar Energy Conference %C Glasgow (United Kingdom) %P 1438 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1990 %T Minority-carrier transport parameters in n-type silicon %A Wang, C.H. %A Misiakos, K. %A Neugroschel, A. %B IEEE Transactions on Electron Devices %V 37 %P 1314 - 1322 %G eng %R 10.1109/16.108194 %0 Journal Article %J Solar Energy %D 1990 %T Modeling daylight availability and irradiance components from direct and global irradiance %A Richard Perez %A Pierre Ineichen %A Robert Seals %A Joseph Michalsky %A Ronald Stewart %B Solar Energy %V 44 %P 271 - 289 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e %R DOI: 10.1016/0038-092X(90)90055-H %0 Journal Article %J Solar Energy %D 1990 %T Modeling daylight availability and irradiance components from direct and global irradiance %A Richard Perez %A Pierre Ineichen %A Robert Seals %A Joseph Michalsky %A Ronald Stewart %X

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

%B Solar Energy %V 44 %P 271–289 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e %R 10.1016/0038-092X(90)90055-H %0 Journal Article %J IEEE Transactions on Electron Devices %D 1983 %T Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon %A G. Masetti %A M. Severi %A S. Solmi %K arsenic %K boron %K CARRIER DENSITY %K carrier mobility %K digital simulation %K elemental semiconductors %K heavily doped semiconductors %K phosphorus %K SILICON %X

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

%B IEEE Transactions on Electron Devices %V ED-30 %P 764–9 %G eng %0 Journal Article %J Solar Energy %D 1970 %T The measurement of solar spectral irradiance at different terrestrial elevations %A E.G. Laue %B Solar Energy %V 13 %P 43 - 50, IN1-IN4, 51-57 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a %R DOI: 10.1016/0038-092X(70)90006-X %0 Journal Article %J Bell System Technical Journal %D 1958 %T Measurement of sheet resistivities with the four-point probe %A F.M. Smits %B Bell System Technical Journal %V 34 %P 711-718 %8 May 1958 %G eng %0 Journal Article %J Annalen der Physick und Chemie %D 1841 %T Memoire sur les effects d´electriques produits sous l´influence des rayons solaires %A Becquerel, A.E. %B Annalen der Physick und Chemie %V 54 %P 35-42 %G eng