%0 Journal Article %J Journal of Applied Physics %D 1994 %T Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors %A A. B. Sproul %K ANALYTICAL SOLUTION %K carrier lifetime %K DECAY %K MINORITY CARRIERS %K RECOMBINATION %K SEMICONDUCTOR MATERIALS %K SURFACES %B Journal of Applied Physics %I AIP %V 76 %P 2851-2854 %G eng %U http://link.aip.org/link/?JAP/76/2851/1 %R 10.1063/1.357521 %0 Journal Article %J Journal of Applied Physics %D 1991 %T Improved value for the silicon intrinsic carrier concentration from 275 to 375 K %A A. B. Sproul %A Martin A Green %K CARRIER DENSITY %K IV CHARACTERISTIC %K JUNCTION DIODES %K MEDIUM TEMPERATURE %K MINORITY CARRIERS %K SANDIA LABORATORIES %K SILICON %K SILICON DIODES %K TEMPERATURE DEPENDENCE %B Journal of Applied Physics %I AIP %V 70 %P 846-854 %G eng %U http://link.aip.org/link/?JAP/70/846/1 %R 10.1063/1.349645 %0 Journal Article %J Journal of Applied Physics %D 1991 %T Improved value for the silicon intrinsic carrier concentration from 275 to 375 K %A A. B. Sproul %A Martin A Green %B Journal of Applied Physics %V 70 %P 846 %8 1991 %G eng %R 10.1063/1.349645 %0 Conference Proceedings %B Twenty First IEEE Photovoltaic Specialists Conference %D 1990 %T 18% efficient polycrystalline silicon solar cells %A Narayanan, S. %A Zolper, J. %A Yun, F. %A Wenham, S.R. %A A. B. Sproul %A Chong,C.M. %A Martin A Green %B Twenty First IEEE Photovoltaic Specialists Conference %V 1 %P 678-680 %G eng %0 Journal Article %J Applied Physics Letters %D 1990 %T Improved value for the silicon intrinsic carrier concentration at 300 K %A A. B. Sproul %A Martin A Green %A Zhao, J. %B Applied Physics Letters %V 57 %P 255 %8 1990 %G eng %R 10.1063/1.103707