%0 Conference Paper %B 35th IEEE Photovoltaic Specialists Conference %D 2010 %T Gen III: Improved Performance at Lower Cost %A Peter J. Cousins %A David D. Smith %A Hsin-Chiao Luan %A Jane Manning %A Tim D. Dennis %A Ann Waldhaue %A Karen E. Wilson %A Gabriel Harley %A William P. Mulligan %B 35th IEEE Photovoltaic Specialists Conference %I IEEE %C Honolulu, Hawaii %G eng %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2008 %T Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method %A S. P. Bremner %A M. Y. Levy %A Christiana B Honsberg %X

We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.

%B Progress in Photovoltaics: Research and Applications %V 16 %P 225–233 %G eng %U http://dx.doi.org/10.1002/pip.799 %R 10.1002/pip.799 %0 Journal Article %J Solid-State Electronics %D 2006 %T Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications %A M. Y. Levy %A Christiana B Honsberg %B Solid-State Electronics %V 50 %P 1400-1405 %G eng %0 Journal Article %D 2003 %T Handbook of Photovoltaic Science and Engineering %A Luque, A. %A Hegedus, S. %I John Wiley & Sons Ltd. %C Chichester, England %P 1117 %@ 0-471-49196-9 %G eng %U http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7 %0 Journal Article %J Solar Energy %D 2001 %T Computing the solar vector %A Manuel Blanco-Muriel %A Diego C. Alarcón-Padilla %A Teodoro López-Moratalla %A MartÍn Lara-Coira %K Solar tracking %B Solar Energy %V 70 %P 431 - 441 %G eng %U http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993 %R DOI: 10.1016/S0038-092X(00)00156-0 %0 Conference Proceedings %B 16h European Solar Energy Conference %D 2000 %T Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions %A R. Corkish %A Luke, K. L. %A Pietro P Altermatt %A G. Heiser %B 16h European Solar Energy Conference %P 1590-1593 %G eng %0 Conference Paper %B Proceedings of the 16h European Solar Energy Conference %D 2000 %T Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions %A R. Corkish %A Luke, K. L. %A Pietro P Altermatt %A G. Heiser %B Proceedings of the 16h European Solar Energy Conference %I James and James %C Glasgow UK %P 1590-1593 %8 1-5 May 2000 %@ 9781902916187 %G eng %0 Journal Article %J Solar Energy Materials and Solar Cells %D 1995 %T On some thermodynamic aspects of photovoltaic solar energy conversion %A Baruch, P. %A De Vos, A. %A Landsberg, P. T. %A J.E. Parrott %B Solar Energy Materials and Solar Cells %V 36 %P 201-222 %G eng %0 Book %D 1991 %T The Role of Photovoltaics in Reducing Greenhouse Gas Emissions %A Andrew W Blakers %A Martin A Green %A T. Leo %A H. Outhred %A B. Robins %I Australian Government Publishing Service %C Canberra %G eng %0 Journal Article %J Journal of Applied Physics %D 1987 %T Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity %A Keung L. Luke %A Li-Jen Cheng %K carrier lifetime %K LASERRADIATION HEATING %K MINORITY CARRIERS %K RECOMBINATION %K SILICON %K SILICON SOLAR CELLS %K SURFACE PROPERTIES %K THEORETICAL DATA %K VELOCITY %K WAFERS %B Journal of Applied Physics %I AIP %V 61 %P 2282-2293 %G eng %U http://link.aip.org/link/?JAP/61/2282/1 %R 10.1063/1.337938 %0 Generic %D 1981 %T The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon %A W R Thurber %A Mattis %A Liu %A Filliben %I U.S. Department of Commerce National Bureau of Standards %G eng %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Boron-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K boron %K electrical resistivity %K Hall effect %K hole density %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 2291-2294 %G eng %U http://link.aip.org/link/?JES/127/2291/1 %R 10.1149/1.2129394 %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K density %K electrical resistivity %K electron mobility %K Hall effect %K neutron activation analysis %K phosphorus %K photometry %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 1807-1812 %G eng %U http://link.aip.org/link/?JES/127/1807/1 %R 10.1149/1.2130006 %0 Journal Article %J IEEE Transactions on Electron Devices %D 1979 %T Application of the superposition principle to solar-cell analysis %A F.A. Lindholm %A Fossum, J.G. %A E.L. Burgess %X The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level). %B IEEE Transactions on Electron Devices %V 26 %P 165–171 %G eng %0 Generic %D 1979 %T United States Patent: 4137123 - Texture etching of silicon: method %A William L. Bailey %A Michael G. Coleman %A Cynthia B. Harris %A Israel A. Lesk %X

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

%G eng %U http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 %0 Journal Article %J Solar Energy %D 1970 %T The measurement of solar spectral irradiance at different terrestrial elevations %A E.G. Laue %B Solar Energy %V 13 %P 43 - 50, IN1-IN4, 51-57 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a %R DOI: 10.1016/0038-092X(70)90006-X