%0 Journal Article %J Physical Review B %D 2012 %T Improved quantitative description of Auger recombination in crystalline silicon %A Richter, Armin %A Stefan W. Glunz %A Werner, Florian %A Jan Schmidt %A Andrés Cuevas %X An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. %B Physical Review B %V 86 %8 Jan-10-2012 %G eng %N 16 %! Phys. Rev. B %R 10.1103/PhysRevB.86.165202 %0 Conference Paper %B 35th IEEE Photovoltaic Specialists Conference %D 2010 %T Gen III: Improved Performance at Lower Cost %A Peter J. Cousins %A David D. Smith %A Hsin-Chiao Luan %A Jane Manning %A Tim D. Dennis %A Ann Waldhaue %A Karen E. Wilson %A Gabriel Harley %A William P. Mulligan %B 35th IEEE Photovoltaic Specialists Conference %I IEEE %C Honolulu, Hawaii %G eng %0 Journal Article %D 2007 %T Applied Photovoltaics %A Wenham, S.R. %A Martin A Green %A Watt, M. E. %A R. Corkish %X
%I Earthscan %C London, UK %P 317 %@ 1-84407-401-3 %G eng %U http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1 %0 Conference Proceedings %B 22nd European Photovoltaic Specialist Conference %D 2007 %T Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells %A De Ceuster, D. %A P. Cousins %A D. Rose %A M. Cudzinovic %A W. Mulligan %B 22nd European Photovoltaic Specialist Conference %G eng %0 Conference Paper %B 4th World Conference on Photovoltaic Energy Conference %D 2006 %T Low Light Performance of Mono-Crystalline Silicon Solar Cells %A Gabriela Bunea %A Karen Wilson %A Yevgeny Meydbray %A Matthew Campbell %A Denis De Ceuster %B 4th World Conference on Photovoltaic Energy Conference %C Waikoloa, HI %P 1312–1314 %8 2006 %G eng %U http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1 %R 10.1109/WCPEC.2006.279655 %0 Conference Proceedings %B 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes %D 2003 %T Dependence of aluminium alloying on solar cell processing conditions %A Christiana B Honsberg %A Anwar, K.K. %A Mehrvarz, H.R. %A Cotter, J.E. %A Wenham, S.R. %B 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes %G eng %0 Journal Article %J Journal of Applied Physics %D 2002 %T General parameterization of Auger recombination in crystalline silicon %A Mark J Kerr %A Andrés Cuevas %K Auger effect %K carrier lifetime %K electron-hole recombination %K elemental semiconductors %K SILICON %B Journal of Applied Physics %I AIP %V 91 %P 2473-2480 %G eng %U http://link.aip.org/link/?JAP/91/2473/1 %R 10.1063/1.1432476 %0 Journal Article %J Journal of Applied Physics %D 2002 %T Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements %A Mark J Kerr %A Andrés Cuevas %A Ronald A. Sinton %X The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. %B Journal of Applied Physics %V 91 %P 399 %8 2002 %G eng %R 10.1063/1.1416134 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2001 %T High performance light trapping textures for monocrystalline silicon solar cells %A Campbell, Patrick %A Martin A Green %X Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications. %B Solar Energy Materials and Solar Cells %V 65 %P 369 - 375 %8 Jan-01-2001 %G eng %N 1-4 %! Solar Energy Materials and Solar Cells %R 10.1016/S0927-0248(00)00115-X %0 Conference Proceedings %B 17th European Photovoltaic Solar Energy Conference %D 2001 %T A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits %A Christiana B Honsberg %A R. Corkish %A S. P. Bremner %B 17th European Photovoltaic Solar Energy Conference %P 22-26 %G eng %0 Journal Article %J Journal of Applied Physics %D 2001 %T On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon %A Daniel Macdonald %A Ronald A. Sinton %A Andrés Cuevas %K CARRIER DENSITY %K carrier lifetime %K electron traps %K electron-hole recombination %K elemental semiconductors %K hole traps %K photoconductivity %K SILICON %K solar cells %B Journal of Applied Physics %I AIP %V 89 %P 2772-2778 %G eng %U http://link.aip.org/link/?JAP/89/2772/1 %R 10.1063/1.1346652 %0 Conference Paper %B 16th European Photovoltaic Solar Energy Conference %D 2000 %T A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization %A Sinton, R.A. %A Andrés Cuevas %B 16th European Photovoltaic Solar Energy Conference %C Glasgow, Scotland %P 1152–1155 %8 05/2000 %G eng %0 Conference Paper %B Proceedings of the 16h European Solar Energy Conference %D 2000 %T Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions %A R. Corkish %A Luke, K. L. %A Pietro P Altermatt %A G. Heiser %B Proceedings of the 16h European Solar Energy Conference %I James and James %C Glasgow UK %P 1590-1593 %8 1-5 May 2000 %@ 9781902916187 %G eng %0 Conference Proceedings %B 16h European Solar Energy Conference %D 2000 %T Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions %A R. Corkish %A Luke, K. L. %A Pietro P Altermatt %A G. Heiser %B 16h European Solar Energy Conference %P 1590-1593 %G eng %0 Journal Article %J physica status solidi (a) %D 1997 %T Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications %A Chandramohan, R. %A Sanjeeviraja, C. %A Mahalingam, T. %B physica status solidi (a) %V 163 %P R11 - R12 %8 Jan-10-1997 %G eng %N 2 %! phys. stat. sol. (a) %R 10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3 %0 Journal Article %J Applied Physics Letters %D 1996 %T Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data %A Ronald A. Sinton %A Andrés Cuevas %K carrier lifetime %K CV CHARACTERISTIC %K MINORITY CARRIERS %K photoconductivity %K SEMICONDUCTOR MATERIALS %K SILICON %K STEADY – STATE CONDITIONS %B Applied Physics Letters %I AIP %V 69 %P 2510-2512 %G eng %U http://link.aip.org/link/?APL/69/2510/1 %R 10.1063/1.117723 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 1996 %T Texturing of polycrystalline silicon %A M. J. Stocks %A A. J. Carr %A Andrew W Blakers %B Solar Energy Materials and Solar Cells %V 40 %P 33 - 42 %G eng %U http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541 %R DOI: 10.1016/0927-0248(95)00077-1 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1994 %T 7000 High Efficiency Cells for a Dream %A Verlinden, P.J. %A Richard M Swanson %A Crane, R.A. %B Progress in Photovoltaics: Research and Applications %V 2 %P 143 - 152 %G eng %0 Conference Proceedings %B Twenty First IEEE Photovoltaic Specialists Conference %D 1990 %T 18% efficient polycrystalline silicon solar cells %A Narayanan, S. %A Zolper, J. %A Yun, F. %A Wenham, S.R. %A A. B. Sproul %A Chong,C.M. %A Martin A Green %B Twenty First IEEE Photovoltaic Specialists Conference %V 1 %P 678-680 %G eng %0 Journal Article %J Journal of Applied Physics %D 1987 %T Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity %A Keung L. Luke %A Li-Jen Cheng %K carrier lifetime %K LASERRADIATION HEATING %K MINORITY CARRIERS %K RECOMBINATION %K SILICON %K SILICON SOLAR CELLS %K SURFACE PROPERTIES %K THEORETICAL DATA %K VELOCITY %K WAFERS %B Journal of Applied Physics %I AIP %V 61 %P 2282-2293 %G eng %U http://link.aip.org/link/?JAP/61/2282/1 %R 10.1063/1.337938 %0 Journal Article %J Journal of Applied Physics %D 1987 %T Light trapping properties of pyramidally textured surfaces %A Campbell, Patrick %A Martin A Green %B Journal of Applied Physics %V 62 %P 243 %8 Jan-01-1987 %G eng %N 1 %! J. Appl. Phys. %R 10.1063/1.339189 %0 Journal Article %J IEEE TRANSACTIONS ON ELECTRON DEVICES %D 1984 %T Limiting Efficiency of Silicon Solar Cells %A T. Tiedje %A E Yablonovich %A G.D. Cody %A B.G. Brooks %B IEEE TRANSACTIONS ON ELECTRON DEVICES %V ED-31 %8 05/1984 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1982 %T Intensity Enhancement in Textured Optical Sheets for Solar Cells %A E Yablonovich %A G.D. Cody %B IEEE Transactions on Electron Devices %V ED-29 %P 300-305 %G eng %0 Generic %D 1979 %T United States Patent: 4137123 - Texture etching of silicon: method %A William L. Bailey %A Michael G. Coleman %A Cynthia B. Harris %A Israel A. Lesk %X

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

%G eng %U http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 %0 Journal Article %J IEEE Transactions on Electron Devices %D 1977 %T Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination %A Card, H.C. %A Yang, E.S. %B IEEE Transactions on Electron Devices %V ED-24 %P 397-402 %G eng %0 Journal Article %J Solar Energy %D 1969 %T The absorption of radiation in solar stills %A P.I. Cooper %B Solar Energy %V 12 %P 333 - 346 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5 %R DOI: 10.1016/0038-092X(69)90047-4 %0 Journal Article %J IBM Journal of Research Devices %D 1964 %T Nondestructive determination of thickness and refractive index of transparent films %A W. A. Pliskin %A E. E. Conrad %X

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

%B IBM Journal of Research Devices %V 8 %P 43–51 %G eng %U http://portal.acm.org/citation.cfm?id=1662391 %0 Journal Article %J Journal of Applied Physics %D 1954 %T A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power %A Chapin, D.M. %A Fuller, C.S. %A Pearson, G.L. %B Journal of Applied Physics %V 25 %P 676-677 %G eng %0 Journal Article %J Zeitschrift für physikalische Chemie %D 1918 %T Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle %A Czochralski, J. %B Zeitschrift für physikalische Chemie %V 92 %P 219–221 %G eng