3.0.CO;2-3
%0 Journal Article
%J Applied Physics Letters
%D 1996
%T Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
%A Ronald A. Sinton
%A Andrés Cuevas
%K carrier lifetime
%K CV CHARACTERISTIC
%K MINORITY CARRIERS
%K photoconductivity
%K SEMICONDUCTOR MATERIALS
%K SILICON
%K STEADY – STATE CONDITIONS
%B Applied Physics Letters
%I AIP
%V 69
%P 2510-2512
%G eng
%U http://link.aip.org/link/?APL/69/2510/1
%R 10.1063/1.117723
%0 Journal Article
%J Solar Energy Materials and Solar Cells
%D 1996
%T Texturing of polycrystalline silicon
%A M. J. Stocks
%A A. J. Carr
%A Andrew W Blakers
%B Solar Energy Materials and Solar Cells
%V 40
%P 33 - 42
%G eng
%U http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541
%R DOI: 10.1016/0927-0248(95)00077-1
%0 Journal Article
%J Progress in Photovoltaics: Research and Applications
%D 1994
%T 7000 High Efficiency Cells for a Dream
%A Verlinden, P.J.
%A Richard M Swanson
%A Crane, R.A.
%B Progress in Photovoltaics: Research and Applications
%V 2
%P 143 - 152
%G eng
%0 Conference Proceedings
%B Twenty First IEEE Photovoltaic Specialists Conference
%D 1990
%T 18% efficient polycrystalline silicon solar cells
%A Narayanan, S.
%A Zolper, J.
%A Yun, F.
%A Wenham, S.R.
%A A. B. Sproul
%A Chong,C.M.
%A Martin A Green
%B Twenty First IEEE Photovoltaic Specialists Conference
%V 1
%P 678-680
%G eng
%0 Journal Article
%J Journal of Applied Physics
%D 1987
%T Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
%A Keung L. Luke
%A Li-Jen Cheng
%K carrier lifetime
%K LASERRADIATION HEATING
%K MINORITY CARRIERS
%K RECOMBINATION
%K SILICON
%K SILICON SOLAR CELLS
%K SURFACE PROPERTIES
%K THEORETICAL DATA
%K VELOCITY
%K WAFERS
%B Journal of Applied Physics
%I AIP
%V 61
%P 2282-2293
%G eng
%U http://link.aip.org/link/?JAP/61/2282/1
%R 10.1063/1.337938
%0 Journal Article
%J Journal of Applied Physics
%D 1987
%T Light trapping properties of pyramidally textured surfaces
%A Campbell, Patrick
%A Martin A Green
%B Journal of Applied Physics
%V 62
%P 243
%8 Jan-01-1987
%G eng
%N 1
%! J. Appl. Phys.
%R 10.1063/1.339189
%0 Journal Article
%J IEEE TRANSACTIONS ON ELECTRON DEVICES
%D 1984
%T Limiting Efficiency of Silicon Solar Cells
%A T. Tiedje
%A E Yablonovich
%A G.D. Cody
%A B.G. Brooks
%B IEEE TRANSACTIONS ON ELECTRON DEVICES
%V ED-31
%8 05/1984
%G eng
%0 Journal Article
%J IEEE Transactions on Electron Devices
%D 1982
%T Intensity Enhancement in Textured Optical Sheets for Solar Cells
%A E Yablonovich
%A G.D. Cody
%B IEEE Transactions on Electron Devices
%V ED-29
%P 300-305
%G eng
%0 Generic
%D 1979
%T United States Patent: 4137123 - Texture etching of silicon: method
%A William L. Bailey
%A Michael G. Coleman
%A Cynthia B. Harris
%A Israel A. Lesk
%X A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
%G eng
%U http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123
%0 Journal Article
%J IEEE Transactions on Electron Devices
%D 1977
%T Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
%A Card, H.C.
%A Yang, E.S.
%B IEEE Transactions on Electron Devices
%V ED-24
%P 397-402
%G eng
%0 Journal Article
%J Solar Energy
%D 1969
%T The absorption of radiation in solar stills
%A P.I. Cooper
%B Solar Energy
%V 12
%P 333 - 346
%G eng
%U http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5
%R DOI: 10.1016/0038-092X(69)90047-4
%0 Journal Article
%J IBM Journal of Research Devices
%D 1964
%T Nondestructive determination of thickness and refractive index of transparent films
%A W. A. Pliskin
%A E. E. Conrad
%X A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
%B IBM Journal of Research Devices
%V 8
%P 43–51
%G eng
%U http://portal.acm.org/citation.cfm?id=1662391
%0 Journal Article
%J Journal of Applied Physics
%D 1954
%T A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power
%A Chapin, D.M.
%A Fuller, C.S.
%A Pearson, G.L.
%B Journal of Applied Physics
%V 25
%P 676-677
%G eng
%0 Journal Article
%J Zeitschrift für physikalische Chemie
%D 1918
%T Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle
%A Czochralski, J.
%B Zeitschrift für physikalische Chemie
%V 92
%P 219–221
%G eng