02042nas a2200169 4500008004100000022001400041245005400055210005300109260001600162300001800178490000800196520156000204100002101764700001901785700002401804856004401828 2012 eng d a0027-842400aFrom the Cover: Anomalously weak solar convection0 aFrom the Cover Anomalously weak solar convection cDec-07-2013 a11928 - 119320 v1093 aConvection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. 1 aHanasoge, S., M.1 aDuvall, T., L.1 aSreenivasan, K., R. uhttps://www.pveducation.org/ko/node/52800585nas a2200193 4500008004100000245004800041210004700089260002700136100002200163700002000185700002100205700001800226700001900244700001800263700002100281700002000302700002500322856004400347 2010 eng d00aGen III: Improved Performance at Lower Cost0 aGen III Improved Performance at Lower Cost aHonolulu, HawaiibIEEE1 aCousins, Peter, J1 aSmith, David, D1 aLuan, Hsin-Chiao1 aManning, Jane1 aDennis, Tim, D1 aWaldhaue, Ann1 aWilson, Karen, E1 aHarley, Gabriel1 aMulligan, William, P uhttps://www.pveducation.org/ko/node/29700929nas a2200229 4500008004100000022001300041245004600054210004400100300001400144490000700158520030600165653002600471653002200497653001600519653001700535653002700552100002100579700001700600700002500617700001900642856003800661 2010 eng d a1062799500aSolar cell efficiency tables (version 35)0 aSolar cell efficiency tables version 35 a144–1500 v183 a
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
10aConversion efficiency10aEnergy conversion10asolar cells10aSolar energy10aSolar power generation1 aGreen, Martin, A1 aEmery, Keith1 aHishikawa, Yoshihiro1 aWarta, Wilhelm uhttp://dx.doi.org/10.1002/pip.97402010nas a2200145 4500008004100000245010900041210006900150300001400219490000700233520152700240100001701767700001401784700002801798856003801826 2008 eng d00aAnalysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method0 aAnalysis of tandem solar cell efficiencies under AM15G spectrum a225–2330 v163 aWe report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.
1 aBremner, S P1 aLevy, M Y1 aHonsberg, Christiana, B uhttp://dx.doi.org/10.1002/pip.79900345nas a2200133 4500008004100000022001400041245003000055210003000085260001200115300001800127490000800145100001400153856004400167 2006 eng d a1091-649000aGlobal temperature change0 aGlobal temperature change c09/2006 a14288 - 142930 v1031 aHansen, J uhttps://www.pveducation.org/ko/node/32500449nas a2200121 4500008004100000245011000041210006900151300001400220490000700234100001400241700002800255856004400283 2006 eng d00aRapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications0 aRapid and precise calculations of energy and particle flux for d a1400-14050 v501 aLevy, M Y1 aHonsberg, Christiana, B uhttps://www.pveducation.org/ko/node/34300499nas a2200133 4500008004100000020001800041245004100059210004100100260003000141300000800171100002300179700002500202856013800227 2005 eng d a3-540-23676-700aPhotovoltaic Solar Energy Generation0 aPhotovoltaic Solar Energy Generation aBerlin, GermanybSpringer a2321 aGoetzberger, Adolf1 aHoffmann, Volker Uwe uhttp://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books&ie=UTF8&qid=1279649098&sr=1-201116nas a2200205 4500008004100000245006000041210006000101300001600161490000700177520052000184653001000704653001600714653002300730653001500753100001900768700002000787700002100807700001900828856006300847 2004 eng d00aElectronic color charts for dielectric films on silicon0 aElectronic color charts for dielectric films on silicon a1464–14690 v123 aThis paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.
10aColor10ameasurement10aoptical properties10aThin films1 aHenrie, Justin1 aKellis, Spencer1 aSchultz, Stephen1 aHawkins, Aaron uhttp://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-146400454nas a2200133 4500008004100000245007300041210006900114100002800183700001500211700001800226700001600244700001600260856004400276 2003 eng d00aDependence of aluminium alloying on solar cell processing conditions0 aDependence of aluminium alloying on solar cell processing condit1 aHonsberg, Christiana, B1 aAnwar, K K1 aMehrvarz, H R1 aCotter, J E1 aWenham, S R uhttps://www.pveducation.org/ko/node/33000489nas a2200133 4500008004100000020001800041245005300059210005300112260004800165300000900213100001300222700001500235856010500250 2003 eng d a0-471-49196-900aHandbook of Photovoltaic Science and Engineering0 aHandbook of Photovoltaic Science and Engineering aChichester, EnglandbJohn Wiley & Sons Ltd. a11171 aLuque, A1 aHegedus, S uhttp://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_701443nas a2200181 4500008004100000022001300041245010300054210006900157260001600226300000900242490000700251520087500258100002501133700002001158700002001178700001901198856004401217 2003 eng d a0021897900aReassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing0 aReassessment of the intrinsic carrier density in crystalline sil cJan-01-2003 a15980 v933 aThe commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.1 aAltermatt, Pietro, P1 aSchenk, Andreas1 aGeelhaar, Frank1 aHeiser, Gernot uhttps://www.pveducation.org/ko/node/54301300nas a2200145 4500008004100000245009100041210006900132300001500201490000700216520074700223100002500970700001600995700001401011856012901025 2001 eng d00aImprovements in numerical modelling of highly injected crystalline silicon solar cells0 aImprovements in numerical modelling of highly injected crystalli a149-155(7)0 v653 aWe numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
1 aAltermatt, Pietro, P1 aSinton, R A1 aHeiser, G uhttp://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-100439nas a2200121 4500008004100000245009300041210006900134300001000203100002800213700001500241700001700256856004400273 2001 eng d00aA New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits0 aNew Generalized Detailed Balance Formulation to Calculate Solar a22-261 aHonsberg, Christiana, B1 aCorkish, R1 aBremner, S P uhttps://www.pveducation.org/ko/node/32900361nas a2200097 4500008004100000245006900041210006300110100001800173700002800191856004400219 2000 eng d00aThe Influence of Edge Recombination on a Solar Cell’s IV Curve0 aInfluence of Edge Recombination on a Solar Cell s IV Curve1 aMcIntosh, K R1 aHonsberg, Christiana, B uhttps://www.pveducation.org/ko/node/35100475nas a2200121 4500008004100000245013700041210006900178260002900247300000900276100001700285700000700302856004400309 2000 eng d00aMapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques0 aMapping of contact resistance and locating shunts on solar cells aGlasgow (United Kingdom) a14381 aHeide, A S H1 aal uhttps://www.pveducation.org/ko/node/32600533nas a2200157 4500008004100000020001800041245007500059210006900134260004600203300001400249100001500263700001400278700002500292700001400317856004400331 2000 eng d a978190291618700aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti aGlasgow UKbJames and Jamesc1-5 May 2000 a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/ko/node/29600445nas a2200133 4500008004100000245007500041210006900116300001400185100001500199700001400214700002500228700001400253856004400267 2000 eng d00aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/ko/node/29500304nas a2200109 4500008004100000245003900041210003900080300001200119490000600131100001300137856004400150 1997 eng d00aRecent progress in MIS solar cells0 aRecent progress in MIS solar cells a109-1200 v51 aHezel, R uhttps://www.pveducation.org/ko/node/32800432nas a2200145 4500008004100000245005600041210005400097260002200151300001200173100001400185700001600199700001200215700001500227856004400242 1997 eng d00aA simple processing sequence for selective emitters0 asimple processing sequence for selective emitters aNew York, NY, USA a139-1421 aHorzel, J1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/ko/node/33100526nas a2200157 4500008004100000245010200041210006900143260001900212300001200231100001600243700001600259700001700275700001500292700001700307856004400324 1991 eng d00aDecline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates0 aDecline of the Carrisa Plains PV Power Plant The Impact of Conce aLas Vegas, USA a586-5921 aWenger, H J1 aSchaefer, J1 aRosenthal, A1 aHammond, B1 aSchlueter, L uhttps://www.pveducation.org/ko/node/40400392nas a2200097 4500008004100000245011400041210006900155100001200224700001400236856004400250 1991 eng d00aA Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources0 aSensitivity Analysis of the Spectral Mismatch Correction Procedu1 aKing, D1 aHansen, B uhttps://www.pveducation.org/ko/node/34000354nas a2200133 4500008004100000245003900041210003600080300001400116490000700130100001200137700001300149700001400162856004400176 1983 eng d00aOn Phosphorus Diffusion in Silicon0 aPhosphorus Diffusion in Silicon a6912-69220 v541 aHu, S M1 aFahey, P1 aSutton, P uhttps://www.pveducation.org/ko/node/33300341nam a2200109 4500008004100000245004800041210004700089260002600136100001000162700001500172856004400187 1983 eng d00aSolar Cells: From Basic to Advanced Systems0 aSolar Cells From Basic to Advanced Systems aNew YorkbMcGraw-Hill1 aHu, C1 aWhite, R M uhttps://www.pveducation.org/ko/node/33200872nas a2200133 4500008004100000245007100041210006700112520028800179100002300467700002400490700002300514700002000537856018100557 1979 eng d00aUnited States Patent: 4137123 - Texture etching of silicon: method0 aUnited States Patent 4137123 Texture etching of silicon method3 aA surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
1 aBailey, William, L1 aColeman, Michael, G1 aHarris, Cynthia, B1 aLesk, Israel, A uhttp://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,12300471nas a2200133 4500008004100000022001400041245006100055210006100116300001200177490000700189100001900196700002100215856010100236 1976 eng d a0038-092X00aSolar thermal power system based on optical transmission0 aSolar thermal power system based on optical transmission a31 - 390 v181 aVant-Hull, L L1 aHildebrandt, A F uhttp://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f8969649800364nas a2200121 4500008004100000245004500041210004400086260003900130300000800169490000700177100001400184856004400198 1952 eng d00aElectron-Hole Recombination in Germanium0 aElectronHole Recombination in Germanium bAmerican Physical Societyc07/1952 a3870 v871 aHall, R N uhttps://www.pveducation.org/ko/node/324