01812nas a2200181 4500008004100000022001400041245008400055210006900139260001600208490000700224520125700231100001901488700002201507700002001529700001701549700002001566856004401586 2012 eng d a1098-012100aImproved quantitative description of Auger recombination in crystalline silicon0 aImproved quantitative description of Auger recombination in crys cJan-10-20120 v863 aAn accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.1 aRichter, Armin1 aGlunz, Stefan, W.1 aWerner, Florian1 aSchmidt, Jan1 aCuevas, Andrés uhttps://www.pveducation.org/ko/node/52500585nas a2200193 4500008004100000245004800041210004700089260002700136100002200163700002000185700002100205700001800226700001900244700001800263700002100281700002000302700002500322856004400347 2010 eng d00aGen III: Improved Performance at Lower Cost0 aGen III Improved Performance at Lower Cost aHonolulu, HawaiibIEEE1 aCousins, Peter, J1 aSmith, David, D1 aLuan, Hsin-Chiao1 aManning, Jane1 aDennis, Tim, D1 aWaldhaue, Ann1 aWilson, Karen, E1 aHarley, Gabriel1 aMulligan, William, P uhttps://www.pveducation.org/ko/node/29700519nas a2200169 4500008004100000020001800041245002600059210002600085260002600111300000800137520001100145100001600156700002100172700001400193700001500207856012700222 2007 eng d a1-84407-401-300aApplied Photovoltaics0 aApplied Photovoltaics aLondon, UKbEarthscan a3173 a
1 aWenham, S R1 aGreen, Martin, A1 aWatt, M E1 aCorkish, R uhttp://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-100443nas a2200133 4500008004100000245007600041210006900117100001800186700001500204700001200219700001800231700001600249856004400265 2007 eng d00aLow Cost, High Volume Production of >22% Efficiency Silicon Solar Cells0 aLow Cost High Volume Production of 22 Efficiency Silicon Solar C1 aDe Ceuster, D1 aCousins, P1 aRose, D1 aCudzinovic, M1 aMulligan, W uhttps://www.pveducation.org/ko/node/30000548nas a2200157 4500008004100000245006600041210006500107260002300172300001600195100002000211700001800231700002200249700002200271700002200293856007500315 2006 eng d00aLow Light Performance of Mono-Crystalline Silicon Solar Cells0 aLow Light Performance of MonoCrystalline Silicon Solar Cells aWaikoloa, HIc2006 a1312–13141 aBunea, Gabriela1 aWilson, Karen1 aMeydbray, Yevgeny1 aCampbell, Matthew1 aCeuster, Denis De uhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=100454nas a2200133 4500008004100000245007300041210006900114100002800183700001500211700001800226700001600244700001600260856004400276 2003 eng d00aDependence of aluminium alloying on solar cell processing conditions0 aDependence of aluminium alloying on solar cell processing condit1 aHonsberg, Christiana, B1 aAnwar, K K1 aMehrvarz, H R1 aCotter, J E1 aWenham, S R uhttps://www.pveducation.org/ko/node/33000601nas a2200193 4500008004100000245007500041210006900116260000800185300001400193490000700207653001700214653002100231653003200252653002900284653001200313100001800325700002000343856004400363 2002 eng d00aGeneral parameterization of Auger recombination in crystalline silicon0 aGeneral parameterization of Auger recombination in crystalline s bAIP a2473-24800 v9110aAuger effect10acarrier lifetime10aelectron-hole recombination10aelemental semiconductors10aSILICON1 aKerr, Mark, J1 aCuevas, Andrés uhttp://link.aip.org/link/?JAP/91/2473/101369nas a2200169 4500008004100000022001300041245010100054210006900155260000900224300000800233490000700241520084700248100001801095700002001113700002201133856004401155 2002 eng d a0021897900aGeneralized analysis of quasi-steady-state and transient decay open circuit voltage measurements0 aGeneralized analysis of quasisteadystate and transient decay ope c2002 a3990 v913 aThe current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.1 aKerr, Mark, J1 aCuevas, Andrés1 aSinton, Ronald, A uhttps://www.pveducation.org/ko/node/33801083nas a2200157 4500008004100000022001300041245008500054210006900139260001600208300001400224490000700238520059300245100002200838700002100860856004400881 2001 eng d a0927024800aHigh performance light trapping textures for monocrystalline silicon solar cells0 aHigh performance light trapping textures for monocrystalline sil cJan-01-2001 a369 - 3750 v653 aTwo novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.1 aCampbell, Patrick1 aGreen, Martin, A uhttps://www.pveducation.org/ko/node/52600439nas a2200121 4500008004100000245009300041210006900134300001000203100002800213700001500241700001700256856004400273 2001 eng d00aA New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits0 aNew Generalized Detailed Balance Formulation to Calculate Solar a22-261 aHonsberg, Christiana, B1 aCorkish, R1 aBremner, S P uhttps://www.pveducation.org/ko/node/32900809nas a2200253 4500008004100000245012200041210006900163260000800232300001400240490000700254653002000261653002100281653001900302653003200321653002900353653001500382653002200397653001200419653001600431100002200447700002200469700002000491856004400511 2001 eng d00aOn the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon0 ause of a biaslight correction for trapping effects in photocondu bAIP a2772-27780 v8910aCARRIER DENSITY10acarrier lifetime10aelectron traps10aelectron-hole recombination10aelemental semiconductors10ahole traps10aphotoconductivity10aSILICON10asolar cells1 aMacdonald, Daniel1 aSinton, Ronald, A1 aCuevas, Andrés uhttp://link.aip.org/link/?JAP/89/2772/100444nas a2200121 4500008004100000245008500041210006900126260003100195300001600226100001600242700002000258856004400278 2000 eng d00aA Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization0 aQuasiSteadyState OpenCircuit Voltage Method for Solar Cell Chara aGlasgow, Scotlandc05/2000 a1152–11551 aSinton, R A1 aCuevas, Andrés uhttps://www.pveducation.org/ko/node/38500533nas a2200157 4500008004100000020001800041245007500059210006900134260004600203300001400249100001500263700001400278700002500292700001400317856004400331 2000 eng d a978190291618700aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti aGlasgow UKbJames and Jamesc1-5 May 2000 a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/ko/node/29600445nas a2200133 4500008004100000245007500041210006900116300001400185100001500199700001400214700002500228700001400253856004400267 2000 eng d00aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/ko/node/29500545nas a2200157 4500008004100000022001300041245010300054210006900157260001600226300001400242490000800256100002100264700002100285700001900306856006200325 1997 eng d a0031896500aPreparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications0 aPreparation of Zinc Selenide Thin Films by Electrodeposition Tec cJan-10-1997 aR11 - R120 v1631 aChandramohan, R.1 aSanjeeviraja, C.1 aMahalingam, T. uhttps://www.pveducation.org/ko/reference/chandramohan199700766nas a2200217 4500008004100000245016200041210007100203260000800274300001400282490000700296653002100303653002200324653002200346653002200368653002800390653001200418653003200430100002200462700002000484856004400504 1996 eng d00aContactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data0 aContactless determination of current–voltage characteristics and bAIP a2510-25120 v6910acarrier lifetime10aCV CHARACTERISTIC10aMINORITY CARRIERS10aphotoconductivity10aSEMICONDUCTOR MATERIALS10aSILICON10aSTEADY – STATE CONDITIONS1 aSinton, Ronald, A1 aCuevas, Andrés uhttp://link.aip.org/link/?APL/69/2510/100456nas a2200145 4500008004100000022001400041245004100055210004100096300001200137490000700149100001600156700001400172700002300186856010100209 1996 eng d a0927-024800aTexturing of polycrystalline silicon0 aTexturing of polycrystalline silicon a33 - 420 v401 aStocks, M J1 aCarr, A J1 aBlakers, Andrew, W uhttp://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf54100383nas a2200133 4500008004100000245004300041210004300084300001400127490000600141100001900147700002400166700001500190856004400205 1994 eng d00a7000 High Efficiency Cells for a Dream0 a7000 High Efficiency Cells for a Dream a143 - 1520 v21 aVerlinden, P J1 aSwanson, Richard, M1 aCrane, R A uhttps://www.pveducation.org/ko/node/40100502nas a2200181 4500008004100000245005400041210005300095300001200148490000600160100001700166700001400183700001100197700001600208700001600224700001500240700002100255856004400276 1990 eng d00a18% efficient polycrystalline silicon solar cells0 a18 efficient polycrystalline silicon solar cells a678-6800 v11 aNarayanan, S1 aZolper, J1 aYun, F1 aWenham, S R1 aSproul, A B1 aChong, C M1 aGreen, Martin, A uhttps://www.pveducation.org/ko/node/35500803nas a2200253 4500008004100000245013700041210006900178260000800247300001400255490000700269653002100276653002700297653002200324653001800346653001200364653002400376653002300400653002100423653001300444653001100457100001900468700001800487856004400505 1987 eng d00aAnalysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity0 aAnalysis of the interaction of a laser pulse with a silicon wafe bAIP a2282-22930 v6110acarrier lifetime10aLASERRADIATION HEATING10aMINORITY CARRIERS10aRECOMBINATION10aSILICON10aSILICON SOLAR CELLS10aSURFACE PROPERTIES10aTHEORETICAL DATA10aVELOCITY10aWAFERS1 aLuke, Keung, L1 aCheng, Li-Jen uhttp://link.aip.org/link/?JAP/61/2282/100444nas a2200145 4500008004100000022001300041245006300054210006300117260001600180300000800196490000700204100002200211700002100233856004400254 1987 eng d a0021897900aLight trapping properties of pyramidally textured surfaces0 aLight trapping properties of pyramidally textured surfaces cJan-01-1987 a2430 v621 aCampbell, Patrick1 aGreen, Martin, A uhttps://www.pveducation.org/ko/node/52700410nas a2200145 4500008004100000245004700041210004700088260001200135490001000147100001400157700001900171700001400190700001600204856004400220 1984 eng d00aLimiting Efficiency of Silicon Solar Cells0 aLimiting Efficiency of Silicon Solar Cells c05/19840 vED-311 aTiedje, T1 aYablonovich, E1 aCody, G D1 aBrooks, B G uhttps://www.pveducation.org/ko/node/39900400nas a2200121 4500008004100000245006900041210006900110300001200179490001000191100001900201700001400220856004400234 1982 eng d00aIntensity Enhancement in Textured Optical Sheets for Solar Cells0 aIntensity Enhancement in Textured Optical Sheets for Solar Cells a300-3050 vED-291 aYablonovich, E1 aCody, G D uhttps://www.pveducation.org/ko/node/41200872nas a2200133 4500008004100000245007100041210006700112520028800179100002300467700002400490700002300514700002000537856018100557 1979 eng d00aUnited States Patent: 4137123 - Texture etching of silicon: method0 aUnited States Patent 4137123 Texture etching of silicon method3 a
A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
1 aBailey, William, L1 aColeman, Michael, G1 aHarris, Cynthia, B1 aLesk, Israel, A uhttp://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,12300432nas a2200121 4500008004100000245010600041210006900147300001200216490001000228100001400238700001400252856004400266 1977 eng d00aElectronic processes at grain boundaries in polycrystalline semiconductors under optical illumination0 aElectronic processes at grain boundaries in polycrystalline semi a397-4020 vED-241 aCard, H C1 aYang, E S uhttps://www.pveducation.org/ko/node/29200407nas a2200121 4500008004100000022001400041245004800055210004400103300001400147490000700161100001600168856010100184 1969 eng d a0038-092X00aThe absorption of radiation in solar stills0 aabsorption of radiation in solar stills a333 - 3460 v121 aCooper, P I uhttp://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc501055nas a2200133 4500008004100000245008800041210006900129300001200198490000600210520062200216100001700838700001600855856005000871 1964 eng d00aNondestructive determination of thickness and refractive index of transparent films0 aNondestructive determination of thickness and refractive index o a43–510 v83 aA simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
1 aPliskin, W A1 aConrad, E E uhttp://portal.acm.org/citation.cfm?id=166239100450nas a2200133 4500008004100000245009400041210006900135300001200204490000700216100001600223700001600239700001700255856004400272 1954 eng d00aA New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power0 aNew Silicon PN Junction Photocell for Converting Solar Radiation a676-6770 v251 aChapin, D M1 aFuller, C S1 aPearson, G L uhttps://www.pveducation.org/ko/node/29300388nas a2200109 4500008004100000245008400041210006900125300001400194490000700208100001900215856004400234 1918 eng d00aEin neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle0 aEin neues Verfahren zur Messung der Kristallisationsgeschwindigh a219–2210 v921 aCzochralski, J uhttps://www.pveducation.org/ko/node/298