01292nas a2200121   4500008004100000022001400041245009100055210006900146300001400215490000800229520086200237856007101099       2000                        eng d  a0040-609000aPhotoelectrochemical properties of copper oxide thin films coated on an n-Si substrate0 aPhotoelectrochemical properties of copper oxide thin films coate  a250 - 2560 v3723 aThe photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200°C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent–potential (I–V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.  uhttp://www.sciencedirect.com/science/article/pii/S0040609000010580