@article {Yoon2000, title = {Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate}, journal = {Thin Solid Films}, volume = {372}, year = {2000}, pages = {250 - 256}, abstract = {The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200{\textdegree}C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent{\textendash}potential (I{\textendash}V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.}, issn = {0040-6090}, doi = {http://dx.doi.org/10.1016/S0040-6090(00)01058-0}, url = {http://www.sciencedirect.com/science/article/pii/S0040609000010580} }