Biblio

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1
S. Narayanan et al., “18% efficient polycrystalline silicon solar cells”, Twenty First IEEE Photovoltaic Specialists Conference, vol. 1. pp. 678-680, 1990.
7
P. J. Verlinden, Swanson, R. M., and Crane, R. A., “7000 High Efficiency Cells for a Dream”, Progress in Photovoltaics: Research and Applications, vol. 2, pp. 143 - 152, 1994.
A
R. M. Swanson, “Approaching the 29% limit efficiency of silicon solar cells”, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp. 889-94, 2005.
C
W. D. Eades and Swanson, R. M., “Calculation of surface generation and recombination velocities at the Si-SiO2 interface”, Journal of Applied Physics, vol. 58, p. 4267, 1985.
R. A. Sinton and Cuevas, A., “Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data”, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
J. Schmidt, Kerr, M. J., and Altermatt, P. P., “Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities”, Journal of Applied Physics, vol. 88, pp. 1494-1497, 2000.
D
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., and Schlueter, L., “Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates”, 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, pp. 586-592, 1991.
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., and Schlueter, L., “Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates”, 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, pp. 586-592, 1991.
W. Shockley and Queisser, H. J., “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells”, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
A. B. Sproul, “Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors”, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
E
J. Henrie, Kellis, S., Schultz, S., and Hawkins, A., “Electronic color charts for dielectric films on silicon”, Optics Express, vol. 12, pp. 1464–1469, 2004.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
F
J. R. G. Ross and Smokler, M. I., “Flat-Plate Solar Array Project Final Report”, pp. 86-31, 1986.
S. M. Hanasoge, Duvall, T. L., and Sreenivasan, K. R., “From the Cover: Anomalously weak solar convection”, Proceedings of the National Academy of Sciences, vol. 109, no. 30, pp. 11928 - 11932, 2012.
K. Bothe, Sinton, R., and Schmidt, J., “Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon”, Progress in Photovoltaics: Research and Applications, vol. 13, pp. 287 - 296, 2005.
K. Bothe, Sinton, R., and Schmidt, J., “Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon”, Progress in Photovoltaics: Research and Applications, vol. 13, pp. 287 - 296, 2005.
G
P. J. Cousins et al., “Gen III: Improved Performance at Lower Cost”, in 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.
M. J. Kerr, Cuevas, A., and Sinton, R. A., “Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements”, Journal of Applied Physics, vol. 91, p. 399, 2002.
I
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., and Mertens, R., “Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 167-170, 1451, 1997.
L
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., and Van-Overstraeten, R., “Low-cost industrial technologies of crystalline silicon solar cells”, Proceedings-of-the-IEEE, vol. 85. pp. 711-730, 1997.

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