Biblio

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J. Schmidt, Kerr, M. J., and Altermatt, P. P., Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities, Journal of Applied Physics, vol. 88, pp. 1494-1497, 2000.
D. Schroder, Semiconductor material and device characterization, 3rd editionrd ed. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
R. Sekuler and Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
H. B. Serreze, Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations, 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, pp. 1-8, 1978.
J. N. Shive, Semiconductor Devices, Chapter 8, New Jersey: Van Nostrand, 1959.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
W. Shockley and Queisser, H. J., Detailed Balance Limit of Efficiency of p-n Junction Solar Cells, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
W. Shockley and Read, W. T., Statistics of the Recombinations of Holes and Electrons, Physical Review, vol. 87, p. 835, 1952.
R. A. Sinton and Cuevas, A., Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
R. A. Sinton and Swanson, R. M., Recombination in highly injected silicon, Electron Devices, IEEE Transactions on, vol. 34, pp. 1380 - 1389, 1987.
R. A. Sinton and Cuevas, A., A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp. 1152–1155.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
A. B. Sproul, Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul, Green, M. A., and Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, p. 846, 1991.
M. J. Stocks, Carr, A. J., and Blakers, A. W., Texturing of polycrystalline silicon, Solar Energy Materials and Solar Cells, vol. 40, pp. 33 - 42, 1996.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
R. M. Swanson, Approaching the 29% limit efficiency of silicon solar cells, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp. 889-94, 2005.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., and Van-Overstraeten, R., Low-cost industrial technologies of crystalline silicon solar cells, Proceedings-of-the-IEEE, vol. 85. pp. 711-730, 1997.