Biblio

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M
D. Macdonald, Sinton, R. A., and Cuevas, A., On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon, Journal of Applied Physics, vol. 89, pp. 2772-2778, 2001.
M. Mack, Solar Power for Telecommunications, The Telecommunication Journal of Australia, vol. 29, pp. 20-44, 1979.
T. Markvart, Solar Electricity, p. 271, 2000.
G. Masetti, Severi, M., and Solmi, S., Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.
K. R. McIntosh and Honsberg, C. B., The Influence of Edge Recombination on a Solar Cell’s IV Curve, 16th European Photovoltaic Solar Energy Conference. 2000.
K. R. McIntosh and Baker-Finch, S. C., OPAL 2: Rapid optical simulation of silicon solar cells, in 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference, Austin, TX, USA, 2012.
A. B. Meinel and Meinel, M. P., Applied Solar Energy. Addison Wesley Publishing Co., 1976.
A. Mette and et al, Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste, Progress in Photovoltaics: Research and Applications, vol. 15, pp. 493-505, 2007.
K. Misiakos and Tsamakis, D., Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K, Journal of Applied Physics, vol. 74, no. 5, p. 3293, 1993.

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