Biblio

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A. S. H. van der Heide and et al, “Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques”, 16th European Photovoltaic Solar Energy Conference. Glasgow (United Kingdom), p. 1438, 2000.
F. M. Smits, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
E. G. Laue, “The measurement of solar spectral irradiance at different terrestrial elevations”, Solar Energy, vol. 13, pp. 43 - 50, IN1-IN4, 51-57, 1970.
A. E. Becquerel, “Memoire sur les effects d´electriques produits sous l´influence des rayons solaires”, Annalen der Physick und Chemie, vol. 54, pp. 35-42, 1841.
F. Dimroth et al., “METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY”, 34th IEEE Photovoltaic Specialists Conference. 2009.
C. H. Wang, Misiakos, K., and Neugroschel, A., “Minority-carrier transport parameters in n-type silicon”, IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271–289, 1990.
G. Masetti, Severi, M., and Solmi, S., “Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon”, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.