Biblio

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Journal Article
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
E. Yablonovich and Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
P. Campbell and Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
R. S. Ohl, “Light-Sensitive Electric Device”, U.S. Patent, vol. 2, p. 402, 602, 1941.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
F. M. Smits, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
E. G. Laue, “The measurement of solar spectral irradiance at different terrestrial elevations”, Solar Energy, vol. 13, pp. 43 - 50, IN1-IN4, 51-57, 1970.
A. E. Becquerel, “Memoire sur les effects d´electriques produits sous l´influence des rayons solaires”, Annalen der Physick und Chemie, vol. 54, pp. 35-42, 1841.
C. H. Wang, Misiakos, K., and Neugroschel, A., “Minority-carrier transport parameters in n-type silicon”, IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271–289, 1990.
G. Masetti, Severi, M., and Solmi, S., “Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon”, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.
C. E. Fritts, “On a New Form of Selenium Photocell”, American J. of Science, vol. 26, p. 465, 1883.
D. M. Chapin, Fuller, C. S., and Pearson, G. L., “A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power”, Journal of Applied Physics, vol. 25, pp. 676-677, 1954.
W. A. Pliskin and Conrad, E. E., “Nondestructive determination of thickness and refractive index of transparent films”, IBM Journal of Research Devices, vol. 8, pp. 43–51, 1964.
P. A. Basore, “Numerical modeling of textured silicon solar cells using PC-1D”, Electron Devices, IEEE Transactions on, vol. 37, pp. 337 -343, 1990.
M. A. Green and Keevers, M. J., “Optical properties of intrinsic silicon at 300 K”, Progress in Photovoltaics: Research and Applications, vol. 3, pp. 189 - 192, 1995.
M. A. Green, “The path to 25% silicon solar cell efficiency: History of silicon cell evolution”, Progress in Photovoltaics: Research and Applications, vol. 17, pp. 183-189, 2009.
S. M. Hu, Fahey, P., and Sutton, P., “On Phosphorus Diffusion in Silicon”, On Phosphorus Diffusion in Silicon, vol. 54, pp. 6912-6922, 1983.
E. F. Kingsbury and Ohl, R. S., “Photoelectric Properties of Tonically Bombarded Silicon”, Bell Systems Technical Journal, vol. 31, pp. 802-815, 1952.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., and Uraoka, Y., “Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence”, Applied Physics Letters, vol. 86, p. 262108, 2005.
A. Goetzberger and Hoffmann, V. U., “Photovoltaic Solar Energy Generation”, p. 232, 2005.
J. G. Fossum, “Physical operation of back-surface-field silicon solar cells”, IEEE Transactions on Electron Devices, vol. 24, pp. 322 - 325, 1977.

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