Biblio

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Journal Article
S. W. Glunz, Rein, S., Warta, W., Knobloch, J., and Wettling, W., “Degradation of carrier lifetime in Cz silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 219 - 229, 2001.
S. J. Robinson, Aberle, A. G., and Green, M. A., “Departures from the principle of superposition in silicon solar cells”, Journal of Applied Physics, vol. 76, p. 7920, 1994.
W. Shockley and Queisser, H. J., “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells”, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
A. B. Sproul, “Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors”, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
M. Planck, “Distribution of energy in the normal spectrum”, Verhandlungen der Deutschen Physikalischen Gesellschaft, vol. 2, pp. 237-245, 1900.
M. Planck, “Distribution of energy in the spectrum”, Annalen der Physik, vol. 4, pp. 553-563, 1901.
J. Czochralski, “Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle”, Zeitschrift für physikalische Chemie, vol. 92, pp. 219–221, 1918.
R. N. Hall, “Electron-Hole Recombination in Germanium”, Phys. Rev., vol. 87, p. 387, 1952.
J. Henrie, Kellis, S., Schultz, S., and Hawkins, A., “Electronic color charts for dielectric films on silicon”, Optics Express, vol. 12, pp. 1464–1469, 2004.
H. C. Card and Yang, E. S., “Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination”, IEEE Transactions on Electron Devices, vol. ED-24, pp. 397-402, 1977.
J. R. G. Ross and Smokler, M. I., “Flat-Plate Solar Array Project Final Report”, pp. 86-31, 1986.
S. M. Hanasoge, Duvall, T. L., and Sreenivasan, K. R., “From the Cover: Anomalously weak solar convection”, Proceedings of the National Academy of Sciences, vol. 109, no. 30, pp. 11928 - 11932, 2012.
K. Bothe, Sinton, R., and Schmidt, J., “Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon”, Progress in Photovoltaics: Research and Applications, vol. 13, pp. 287 - 296, 2005.
M. J. Kerr and Cuevas, A., “General parameterization of Auger recombination in crystalline silicon”, Journal of Applied Physics, vol. 91, pp. 2473-2480, 2002.
H. Nagel, Berge, C., and Aberle, A. G., “Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors”, Journal of Applied Physics, vol. 86, pp. 6218-6221, 1999.
M. J. Kerr, Cuevas, A., and Sinton, R. A., “Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements”, Journal of Applied Physics, vol. 91, p. 399, 2002.
A. Einstein, “Generation and transformation of light”, Annalen der Physik, vol. 17, 1905.
NASA, “GISS Surface Temperature Analysis”, 2010.
J. Hansen, “Global temperature change”, Proceedings of the National Academy of Sciences, vol. 103, pp. 14288 - 14293, 2006.
A. Luque and Hegedus, S., “Handbook of Photovoltaic Science and Engineering”, p. 1117, 2003.
M. Aven, “High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing”, Journal of Applied Physics, vol. 42, no. 3, p. 1204, 1971.
P. Campbell and Green, M. A., “High performance light trapping textures for monocrystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 369 - 375, 2001.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.

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