Biblio

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G
H. Nagel, Berge, C., and Aberle, A. G., “Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors”, Journal of Applied Physics, vol. 86, pp. 6218-6221, 1999.
M. J. Kerr, Cuevas, A., and Sinton, R. A., “Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements”, Journal of Applied Physics, vol. 91, p. 399, 2002.
A. Einstein, “Generation and transformation of light”, Annalen der Physik, vol. 17, 1905.
NASA, “GISS Surface Temperature Analysis”, 2010.
J. Hansen, “Global temperature change”, Proceedings of the National Academy of Sciences, vol. 103, pp. 14288 - 14293, 2006.
H
A. Luque and Hegedus, S., “Handbook of Photovoltaic Science and Engineering”, p. 1117, 2003.
B. Dale and Rudenberg, H. G., “High efficiency silicon solar cells”, in Proceedings of the 14th Annual Power Sources Conference, 1960, p. 22.
M. Aven, “High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing”, Journal of Applied Physics, vol. 42, no. 3, p. 1204, 1971.
P. Campbell and Green, M. A., “High performance light trapping textures for monocrystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 369 - 375, 2001.
M. Wolf, “Historical Development of Solar Cells”. IEEE Press, 1976.
I
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., and Narayanan, S., “Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells”, 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
J. Zhao, A., W., Dai, X., Green, M. A., and Wenham, S. R., “Improvements in Silicon Solar Cell Performance”, 22nd IEEE PV Specialists Conference. pp. 399-402, 1991.
K. R. McIntosh and Honsberg, C. B., “The Influence of Edge Recombination on a Solar Cell’s IV Curve”, 16th European Photovoltaic Solar Energy Conference. 2000.
E. Yablonovich and Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., and Mertens, R., “Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 167-170, 1451, 1997.
L
P. Campbell and Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
R. S. Ohl, “Light-Sensitive Electric Device”, U.S. Patent, vol. 2, p. 402, 602, 1941.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
D. De Ceuster, Cousins, P., Rose, D., Cudzinovic, M., and Mulligan, W., “Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells”, 22nd European Photovoltaic Specialist Conference. 2007.

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