Biblio

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C
M. Blanco-Muriel, Alarcón-Padilla, D. C., López-Moratalla, T., and Lara-Coira, M. Í., “Computing the solar vector”, Solar Energy, vol. 70, pp. 431 - 441, 2001.
F. Braun, “On Conductance in Metal Sulphides”, Ann. d. Physik, vol. 153, p. 556, 1874.
R. A. Sinton and Cuevas, A., “Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data”, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
L. O. Grondahl, “The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell”, Review of Modern Physics, vol. 5, p. 141, 1933.
J. Schmidt, Kerr, M. J., and Altermatt, P. P., “Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities”, Journal of Applied Physics, vol. 88, pp. 1494-1497, 2000.
D
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., and Schlueter, L., “Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates”, 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, pp. 586-592, 1991.
P. A. Basore, “Defining terms for crystalline silicon solar cells”, Progress in Photovoltaics: Research and Applications, vol. 2, pp. 177-179, 1994.
S. W. Glunz, Rein, S., Warta, W., Knobloch, J., and Wettling, W., “Degradation of carrier lifetime in Cz silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 219 - 229, 2001.
S. J. Robinson, Aberle, A. G., and Green, M. A., “Departures from the principle of superposition in silicon solar cells”, Journal of Applied Physics, vol. 76, p. 7920, 1994.
C. B. Honsberg, Anwar, K. K., Mehrvarz, H. R., Cotter, J. E., and Wenham, S. R., “Dependence of aluminium alloying on solar cell processing conditions”, 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes. 2003.
W. Shockley and Queisser, H. J., “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells”, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
A. B. Sproul, “Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors”, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
M. Planck, “Distribution of energy in the normal spectrum”, Verhandlungen der Deutschen Physikalischen Gesellschaft, vol. 2, pp. 237-245, 1900.
M. Planck, “Distribution of energy in the spectrum”, Annalen der Physik, vol. 4, pp. 553-563, 1901.
E
J. Czochralski, “Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle”, Zeitschrift für physikalische Chemie, vol. 92, pp. 219–221, 1918.
R. N. Hall, “Electron-Hole Recombination in Germanium”, Phys. Rev., vol. 87, p. 387, 1952.
J. Henrie, Kellis, S., Schultz, S., and Hawkins, A., “Electronic color charts for dielectric films on silicon”, Optics Express, vol. 12, pp. 1464–1469, 2004.
H. C. Card and Yang, E. S., “Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination”, IEEE Transactions on Electron Devices, vol. ED-24, pp. 397-402, 1977.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
F
R. G. Ross, “Flat-Plate Photovoltaic Array Design Optimization”, 14th IEEE Photovoltaic Specialists Conference. San Diego, CA, pp. 1126-1132, 1980.
J. R. G. Ross and Smokler, M. I., “Flat-Plate Solar Array Project Final Report”, pp. 86-31, 1986.
S. M. Hanasoge, Duvall, T. L., and Sreenivasan, K. R., “From the Cover: Anomalously weak solar convection”, Proceedings of the National Academy of Sciences, vol. 109, no. 30, pp. 11928 - 11932, 2012.
K. Bothe, Sinton, R., and Schmidt, J., “Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon”, Progress in Photovoltaics: Research and Applications, vol. 13, pp. 287 - 296, 2005.
G
P. J. Cousins et al., “Gen III: Improved Performance at Lower Cost”, in 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.
M. J. Kerr and Cuevas, A., “General parameterization of Auger recombination in crystalline silicon”, Journal of Applied Physics, vol. 91, pp. 2473-2480, 2002.

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