%0 Journal Article %J Proceedings of the National Academy of Sciences %D 2012 %T From the Cover: Anomalously weak solar convection %A Hanasoge, S. M. %A Duvall, T. L. %A Sreenivasan, K. R. %X Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. %B Proceedings of the National Academy of Sciences %V 109 %P 11928 - 11932 %8 Dec-07-2013 %G eng %N 30 %! Proceedings of the National Academy of Sciences %R 10.1073/pnas.1206570109 %0 Journal Article %J Physical Review B %D 2012 %T Improved quantitative description of Auger recombination in crystalline silicon %A Richter, Armin %A Stefan W. Glunz %A Werner, Florian %A Jan Schmidt %A Andrés Cuevas %X An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. %B Physical Review B %V 86 %8 Jan-10-2012 %G eng %N 16 %! Phys. Rev. B %R 10.1103/PhysRevB.86.165202 %0 Conference Paper %B 35th IEEE Photovoltaic Specialists Conference %D 2010 %T Gen III: Improved Performance at Lower Cost %A Peter J. Cousins %A David D. Smith %A Hsin-Chiao Luan %A Jane Manning %A Tim D. Dennis %A Ann Waldhaue %A Karen E. Wilson %A Gabriel Harley %A William P. Mulligan %B 35th IEEE Photovoltaic Specialists Conference %I IEEE %C Honolulu, Hawaii %G eng %0 Conference Proceedings %B 35 IEEE Photovoltaic Specialist Conference %D 2010 %T World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process %A Takamoto, T. %A Agui, T. %A Yoshida, A. %A Nakaido, K. %A Juso, H. %A Sasaki, K. %A Nakamura, K. %A Yamaguchi, H. %A Kodama, T. %A Washio, H. %A Imazumi, M. %A Takahashi, M. %B 35 IEEE Photovoltaic Specialist Conference %C Honolulu HI, USA %G eng %0 Conference Proceedings %B 34th IEEE Photovoltaic Specialists Conference %D 2009 %T METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY %A F. Dimroth %A W. Guter %A J. Schöne %A E. Welser %A M. Steiner %A E. Oliva %A A. Wekkeli %A G. Siefer %A S.P. Philipps %A A.W. Bett %B 34th IEEE Photovoltaic Specialists Conference %G eng %0 Book %D 2006 %T Semiconductor material and device characterization %A Dieter Schroder %7 3rd edition %I IEEE Press; Wiley %C Piscataway NJ; Hoboken N.J. %@ 9780471739067 %G eng %0 Conference Proceedings %B Thirty-First IEEE Photovoltaic Specialists Conference %D 2005 %T Approaching the 29% limit efficiency of silicon solar cells %A Richard M Swanson %B Thirty-First IEEE Photovoltaic Specialists Conference %I 01/2005 %C Lake buena Vista, FL, USA %P 889-94 %G eng %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2005 %T Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon %A Bothe, Karsten %A Sinton, Ron %A Jan Schmidt %B Progress in Photovoltaics: Research and Applications %V 13 %P 287 - 296 %8 06/2005 %G eng %R 10.1002/pip.586 %0 Journal Article %J Optics Express %D 2004 %T Electronic color charts for dielectric films on silicon %A Justin Henrie %A Spencer Kellis %A Stephen Schultz %A Aaron Hawkins %K Color %K measurement %K optical properties %K Thin films %X

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

%B Optics Express %V 12 %P 1464–1469 %G eng %U http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464 %R 10.1364/OPEX.12.001464 %0 Journal Article %J Journal of Applied Physics %D 2003 %T Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing %A Pietro P Altermatt %A Schenk, Andreas %A Geelhaar, Frank %A Heiser, Gernot %X The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved. %B Journal of Applied Physics %V 93 %P 1598 %8 Jan-01-2003 %G eng %N 3 %! J. Appl. Phys. %R 10.1063/1.1529297 %0 Journal Article %J Journal of Applied Physics %D 2002 %T Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements %A Mark J Kerr %A Andrés Cuevas %A Ronald A. Sinton %X The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. %B Journal of Applied Physics %V 91 %P 399 %8 2002 %G eng %R 10.1063/1.1416134 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2001 %T Improvements in numerical modelling of highly injected crystalline silicon solar cells %A Pietro P Altermatt %A Sinton, R.A. %A G. Heiser %X

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

%B Solar Energy Materials and Solar Cells %V 65 %P 149-155(7) %G eng %U http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1 %0 Journal Article %J Journal of Applied Physics %D 2001 %T On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon %A Daniel Macdonald %A Ronald A. Sinton %A Andrés Cuevas %K CARRIER DENSITY %K carrier lifetime %K electron traps %K electron-hole recombination %K elemental semiconductors %K hole traps %K photoconductivity %K SILICON %K solar cells %B Journal of Applied Physics %I AIP %V 89 %P 2772-2778 %G eng %U http://link.aip.org/link/?JAP/89/2772/1 %R 10.1063/1.1346652 %0 Journal Article %J Journal of Applied Physics %D 2000 %T Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities %A Jan Schmidt %A Mark J Kerr %A Pietro P Altermatt %K Auger effect %K carrier lifetime %K electron-hole recombination %K elemental semiconductors %K photoconductivity %K SILICON %B Journal of Applied Physics %I AIP %V 88 %P 1494-1497 %G eng %U http://link.aip.org/link/?JAP/88/1494/1 %R 10.1063/1.373878 %0 Conference Paper %B 16th European Photovoltaic Solar Energy Conference %D 2000 %T A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization %A Sinton, R.A. %A Andrés Cuevas %B 16th European Photovoltaic Solar Energy Conference %C Glasgow, Scotland %P 1152–1155 %8 05/2000 %G eng %0 Book %D 2000 %T Solid State Electronic Devices %A Ben G. Streetman %I Prentice Hall %G eng %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions %A Einhaus, R. %A Vazsonyi, E. %A Szlufcik, J. %A Nijs, J. %A Mertens, R. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 167-170, 1451 %G eng %0 Conference Proceedings %B Proceedings-of-the-IEEE %D 1997 %T Low-cost industrial technologies of crystalline silicon solar cells %A Szlufcik, J. %A Sivoththaman, S. %A Nlis, J.F. %A Mertens, R.P. %A Van-Overstraeten, R. %B Proceedings-of-the-IEEE %V 85 %P 711-730 %G eng %0 Journal Article %J physica status solidi (a) %D 1997 %T Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications %A Chandramohan, R. %A Sanjeeviraja, C. %A Mahalingam, T. %B physica status solidi (a) %V 163 %P R11 - R12 %8 Jan-10-1997 %G eng %N 2 %! phys. stat. sol. (a) %R 10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3 %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T A simple processing sequence for selective emitters %A Horzel, J. %A Szlufcik, J. %A Nijs, J. %A Mertens, R. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 139-142 %G eng %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T Surface texturing using reactive ion etching for multicrystalline silicon solar cells %A Fukui, K. %A Inomata, Y. %A Shirasawa, K. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 1451, 47-50 %G eng %0 Journal Article %J Applied Physics Letters %D 1996 %T Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data %A Ronald A. Sinton %A Andrés Cuevas %K carrier lifetime %K CV CHARACTERISTIC %K MINORITY CARRIERS %K photoconductivity %K SEMICONDUCTOR MATERIALS %K SILICON %K STEADY – STATE CONDITIONS %B Applied Physics Letters %I AIP %V 69 %P 2510-2512 %G eng %U http://link.aip.org/link/?APL/69/2510/1 %R 10.1063/1.117723 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 1996 %T Texturing of polycrystalline silicon %A M. J. Stocks %A A. J. Carr %A Andrew W Blakers %B Solar Energy Materials and Solar Cells %V 40 %P 33 - 42 %G eng %U http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541 %R DOI: 10.1016/0927-0248(95)00077-1 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1994 %T 7000 High Efficiency Cells for a Dream %A Verlinden, P.J. %A Richard M Swanson %A Crane, R.A. %B Progress in Photovoltaics: Research and Applications %V 2 %P 143 - 152 %G eng %0 Journal Article %J Journal of Applied Physics %D 1994 %T Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors %A A. B. Sproul %K ANALYTICAL SOLUTION %K carrier lifetime %K DECAY %K MINORITY CARRIERS %K RECOMBINATION %K SEMICONDUCTOR MATERIALS %K SURFACES %B Journal of Applied Physics %I AIP %V 76 %P 2851-2854 %G eng %U http://link.aip.org/link/?JAP/76/2851/1 %R 10.1063/1.357521 %0 Conference Proceedings %B 22nd IEEE Photovoltaic Specialists Conference %D 1991 %T Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates %A Wenger, H.J. %A Schaefer, J. %A Rosenthal, A. %A Hammond, B. %A Schlueter, L. %B 22nd IEEE Photovoltaic Specialists Conference %C Las Vegas, USA %P 586-592 %G eng %0 Journal Article %J Journal of Applied Physics %D 1991 %T Improved value for the silicon intrinsic carrier concentration from 275 to 375 K %A A. B. Sproul %A Martin A Green %B Journal of Applied Physics %V 70 %P 846 %8 1991 %G eng %R 10.1063/1.349645 %0 Journal Article %J Journal of Applied Physics %D 1991 %T Improved value for the silicon intrinsic carrier concentration from 275 to 375 K %A A. B. Sproul %A Martin A Green %K CARRIER DENSITY %K IV CHARACTERISTIC %K JUNCTION DIODES %K MEDIUM TEMPERATURE %K MINORITY CARRIERS %K SANDIA LABORATORIES %K SILICON %K SILICON DIODES %K TEMPERATURE DEPENDENCE %B Journal of Applied Physics %I AIP %V 70 %P 846-854 %G eng %U http://link.aip.org/link/?JAP/70/846/1 %R 10.1063/1.349645 %0 Conference Proceedings %B Twenty First IEEE Photovoltaic Specialists Conference %D 1990 %T 18% efficient polycrystalline silicon solar cells %A Narayanan, S. %A Zolper, J. %A Yun, F. %A Wenham, S.R. %A A. B. Sproul %A Chong,C.M. %A Martin A Green %B Twenty First IEEE Photovoltaic Specialists Conference %V 1 %P 678-680 %G eng %0 Journal Article %J Applied Physics Letters %D 1990 %T Improved value for the silicon intrinsic carrier concentration at 300 K %A A. B. Sproul %A Martin A Green %A Zhao, J. %B Applied Physics Letters %V 57 %P 255 %8 1990 %G eng %R 10.1063/1.103707 %0 Journal Article %J Solar Energy %D 1990 %T Modeling daylight availability and irradiance components from direct and global irradiance %A Richard Perez %A Pierre Ineichen %A Robert Seals %A Joseph Michalsky %A Ronald Stewart %B Solar Energy %V 44 %P 271 - 289 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e %R DOI: 10.1016/0038-092X(90)90055-H %0 Journal Article %J Solar Energy %D 1990 %T Modeling daylight availability and irradiance components from direct and global irradiance %A Richard Perez %A Pierre Ineichen %A Robert Seals %A Joseph Michalsky %A Ronald Stewart %X

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

%B Solar Energy %V 44 %P 271–289 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e %R 10.1016/0038-092X(90)90055-H %0 Journal Article %J Electron Devices, IEEE Transactions on %D 1987 %T Recombination in highly injected silicon %A Sinton, R.A. %A Richard M Swanson %B Electron Devices, IEEE Transactions on %V 34 %P 1380 - 1389 %8 jun %G eng %0 Journal Article %D 1986 %T Flat-Plate Solar Array Project Final Report %A Ross, R.G. Jnr. %A Smokler, M.I. %I Jet Propulsion Laboratory %P 86-31 %G eng %0 Journal Article %J Journal of Applied Physics %D 1985 %T Calculation of surface generation and recombination velocities at the Si-SiO2 interface %A Eades, Wendell D. %A Richard M Swanson %B Journal of Applied Physics %V 58 %P 4267 %8 1985 %G eng %R 10.1063/1.335562 %0 Book %D 1985 %T Perception %A Sekuler, R. %A Blake, R. %I Alfred A. Knopf Inc %C New York %G eng %0 Book %D 1984 %T Photovoltaics for Residential Applications %A SERI %I Solar Energy Research Institute %C Golden, Colorado %0 Journal Article %J IEEE Transactions on Electron Devices %D 1983 %T Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon %A G. Masetti %A M. Severi %A S. Solmi %K arsenic %K boron %K CARRIER DENSITY %K carrier mobility %K digital simulation %K elemental semiconductors %K heavily doped semiconductors %K phosphorus %K SILICON %X

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

%B IEEE Transactions on Electron Devices %V ED-30 %P 764–9 %G eng %0 Journal Article %J On Phosphorus Diffusion in Silicon %D 1983 %T On Phosphorus Diffusion in Silicon %A S.M. Hu %A P. Fahey %A P. Sutton %B On Phosphorus Diffusion in Silicon %V 54 %P 6912-6922 %G eng %0 Conference Proceedings %B 13th IEEE Photovoltaic Specialists Conference %D 1978 %T Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations %A H.B. Serreze %B 13th IEEE Photovoltaic Specialists Conference %C Washington, D.C., USA %P 1-8 %G eng %0 Conference Proceedings %B 10th IEEE Photovoltaic Specialists Conference %D 1973 %T Optimum Design of Anti-reflection coating for silicon solar cells %A E.Y. Wang %A F.T.S. Yu %A V.L. Sims %A E.W. Brandhorst %A J.D. Broder %B 10th IEEE Photovoltaic Specialists Conference %P 168-171 %G eng %0 Journal Article %J Journal of Applied Physics %D 1961 %T Detailed Balance Limit of Efficiency of p-n Junction Solar Cells %A William Shockley %A Hans J. Queisser %B Journal of Applied Physics %I AIP %V 32 %P 510-519 %G eng %U http://link.aip.org/link/?JAP/32/510/1 %R 10.1063/1.1736034 %0 Book Section %D 1959 %T Semiconductor Devices, Chapter 8 %A J.N. Shive %I Van Nostrand %C New Jersey %G eng %0 Journal Article %J Bell System Technical Journal %D 1958 %T Measurement of sheet resistivities with the four-point probe %A F.M. Smits %B Bell System Technical Journal %V 34 %P 711-718 %8 May 1958 %G eng %0 Journal Article %J Physical Review %D 1952 %T Statistics of the Recombinations of Holes and Electrons %A William Shockley %A W. T. Read %X The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed. %B Physical Review %V 87 %P 835 %G eng %U http://link.aps.org/doi/10.1103/PhysRev.87.835 %R 10.1103/PhysRev.87.835 %0 Book %D 1950 %T Electrons and holes in semiconductors with applications to transistor electronics %A William Shockley %I van Nostrand %C New York %G eng