TY - JOUR T1 - The Recombination Parameter J0 JF - Energy Procedia Y1 - 2014 AB - The parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter. VL - 55 UR - http://www.sciencedirect.com/science/article/pii/S1876610214012971# J1 - Energy Procedia KW - Cuevas2014 ER - TY - JOUR T1 - Improved quantitative description of Auger recombination in crystalline silicon JF - Physical Review B Y1 - 2012 A1 - Richter, Armin A1 - Stefan W. Glunz A1 - Werner, Florian A1 - Jan Schmidt A1 - Andrés Cuevas AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. VL - 86 CP - 16 J1 - Phys. Rev. B KW - Richter2012 ER - TY - JOUR T1 - General parameterization of Auger recombination in crystalline silicon JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - SILICON PB - AIP VL - 91 UR - http://link.aip.org/link/?JAP/91/2473/1 KW - Kerr2002 ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas A1 - Ronald A. Sinton AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. VL - 91 N1 -
KW - Kerr2002 ER - TY - JOUR T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon JF - Journal of Applied Physics Y1 - 2001 A1 - Daniel Macdonald A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - CARRIER DENSITY KW - carrier lifetime KW - electron traps KW - electron-hole recombination KW - elemental semiconductors KW - hole traps KW - photoconductivity KW - SILICON KW - solar cells PB - AIP VL - 89 UR - http://link.aip.org/link/?JAP/89/2772/1 KW - Macdonald2001 ER - TY - CONF T1 - A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - Sinton, R.A. A1 - Andrés Cuevas JA - 16th European Photovoltaic Solar Energy Conference CY - Glasgow, Scotland KW - Sinton2000 ER - TY - JOUR T1 - Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data JF - Applied Physics Letters Y1 - 1996 A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - carrier lifetime KW - CV CHARACTERISTIC KW - MINORITY CARRIERS KW - photoconductivity KW - SEMICONDUCTOR MATERIALS KW - SILICON KW - STEADY – STATE CONDITIONS PB - AIP VL - 69 UR - http://link.aip.org/link/?APL/69/2510/1 KW - Sinton1996 ER -