TY - CONF T1 - Gen III: Improved Performance at Lower Cost T2 - 35th IEEE Photovoltaic Specialists Conference Y1 - 2010 A1 - Peter J. Cousins A1 - David D. Smith A1 - Hsin-Chiao Luan A1 - Jane Manning A1 - Tim D. Dennis A1 - Ann Waldhaue A1 - Karen E. Wilson A1 - Gabriel Harley A1 - William P. Mulligan JA - 35th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Honolulu, Hawaii N1 -
KW - Cousins2010 ER - TY - JOUR T1 - Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method JF - Progress in Photovoltaics: Research and Applications Y1 - 2008 A1 - S. P. Bremner A1 - M. Y. Levy A1 - Christiana B Honsberg AB -

We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.

VL - 16 UR - http://dx.doi.org/10.1002/pip.799 KW - Bremner2008 ER - TY - JOUR T1 - Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications JF - Solid-State Electronics Y1 - 2006 A1 - M. Y. Levy A1 - Christiana B Honsberg VL - 50 KW - Levy2006 ER - TY - JOUR T1 - Handbook of Photovoltaic Science and Engineering Y1 - 2003 A1 - Luque, A. A1 - Hegedus, S. PB - John Wiley & Sons Ltd. CY - Chichester, England SN - 0-471-49196-9 UR - http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7 N1 -

1. Status, Trends, Challenges and the Bright Future of Solar Electricity from Photovoltaics. 

2. Motivation for Photovoltaic Application and Development

3. The Physics of the Solar Cell

4. Theoretical Limits of Photovoltaic Conversion

5. Solar Grade Silicon Feedstock 

6. Bulk Crystal Growth and Wafering for PV

7. Crystalline Silicon Solar Cells and Modules 

8. Thin-film Silicon Solar Cells 

9. High-efficiency III-V Multijunction Solar Cells

10. Space Solar Cells and Arrays

11. Photovoltaic Concentrators 

12. Amorphous Silicon-based Solar Cells 

13. Cu(InGa)Se2 Solar Cells

14. Cadmium Telluride Solar Cells

15. Dye-sensitized Solar Cells

16. Measurement and Characterization of Solar Cells and Modules

17. Photovoltaic Systems

18. Electrochemical Storage for Photovoltaics

19. Power Conditioning for Photovoltaic Power Systems

20. Energy Collected and Delivered by PV Modules

21. Economic Analysis and Environmental Aspects of Photovoltaic Systems

22. PV in Architecture

23. Photovoltaics and Development

24. Financing PV Growth 

Index

KW - Luque2003 ER - TY - JOUR T1 - Computing the solar vector JF - Solar Energy Y1 - 2001 A1 - Manuel Blanco-Muriel A1 - Diego C. Alarcón-Padilla A1 - Teodoro López-Moratalla A1 - MartÍn Lara-Coira KW - Solar tracking VL - 70 UR - http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993 N1 -
KW - BlancoMuriel2001 ER - TY - Generic T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - 16h European Solar Energy Conference N1 -
KW - Corkish2000 ER - TY - CONF T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - Proceedings of the 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - Proceedings of the 16h European Solar Energy Conference PB - James and James CY - Glasgow UK SN - 9781902916187 N1 -
KW - Corkish2000 ER - TY - JOUR T1 - On some thermodynamic aspects of photovoltaic solar energy conversion JF - Solar Energy Materials and Solar Cells Y1 - 1995 A1 - Baruch, P. A1 - De Vos, A. A1 - Landsberg, P. T. A1 - J.E. Parrott VL - 36 KW - Baruch1995 ER - TY - BOOK T1 - The Role of Photovoltaics in Reducing Greenhouse Gas Emissions Y1 - 1991 A1 - Andrew W Blakers A1 - Martin A Green A1 - T. Leo A1 - H. Outhred A1 - B. Robins PB - Australian Government Publishing Service CY - Canberra N1 -
KW - Blakers1991 ER - TY - JOUR T1 - Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity JF - Journal of Applied Physics Y1 - 1987 A1 - Keung L. Luke A1 - Li-Jen Cheng KW - carrier lifetime KW - LASERRADIATION HEATING KW - MINORITY CARRIERS KW - RECOMBINATION KW - SILICON KW - SILICON SOLAR CELLS KW - SURFACE PROPERTIES KW - THEORETICAL DATA KW - VELOCITY KW - WAFERS PB - AIP VL - 61 UR - http://link.aip.org/link/?JAP/61/2282/1 KW - Luke1987 ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER - TY - JOUR T1 - Application of the superposition principle to solar-cell analysis JF - IEEE Transactions on Electron Devices Y1 - 1979 A1 - F.A. Lindholm A1 - Fossum, J.G. A1 - E.L. Burgess AB - The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level). VL - 26 KW - Lindholm1979 ER - TY - ABST T1 - United States Patent: 4137123 - Texture etching of silicon: method Y1 - 1979 A1 - William L. Bailey A1 - Michael G. Coleman A1 - Cynthia B. Harris A1 - Israel A. Lesk AB -

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 KW - Bailey1979 ER - TY - JOUR T1 - The measurement of solar spectral irradiance at different terrestrial elevations JF - Solar Energy Y1 - 1970 A1 - E.G. Laue VL - 13 UR - http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a N1 -
KW - Laue1970 ER -