01029nas a2200121   4500008004100000022001400041245010100055210006900156300001400225490000700239520059000246856007100836       1997                        eng d  a0927-024800aPreparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors0 aPreparation and evaluation of Cu2ZnSnS4 thin films by sulfurizat  a407 - 4140 v493 aBy sulfurization of EB evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 104cm−1. The resistivity was in the the order of 104 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.  uhttp://www.sciencedirect.com/science/article/pii/S0927024897001190