00690nas a2200229 4500008004100000245010800041210006900149260002100218100001600239700001200255700001500267700001500282700001200297700001400309700001600323700001700339700001400356700001400370700001500384700001700399856004400416 2010 eng d00aWorld’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process0 aWorld s Highest Efficiency Triplejunction Solar Cells Fabricated aHonolulu HI, USA1 aTakamoto, T1 aAgui, T1 aYoshida, A1 aNakaido, K1 aJuso, H1 aSasaki, K1 aNakamura, K1 aYamaguchi, H1 aKodama, T1 aWashio, H1 aImazumi, M1 aTakahashi, M uhttps://www.pveducation.org/id/node/39500773nas a2200241 4500008004100000245012600041210006900167260000800236300001100244490000700255653002100262653002400283653002900307653002200336653001200358653001600370100002000386700001800406700002200424700001800446700002100464856004600485 2005 eng d00aPhotographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence0 aPhotographic surveying of minority carrier diffusion length in p bAIP a2621080 v8610acarrier lifetime10aelectroluminescence10aelemental semiconductors10aMINORITY CARRIERS10aSILICON10asolar cells1 aFuyuki, Takashi1 aKondo, Hayato1 aYamazaki, Tsutomu1 aTakahashi, Yu1 aUraoka, Yukiharu uhttp://link.aip.org/link/?APL/86/262108/101116nas a2200205 4500008004100000245006000041210006000101300001600161490000700177520052000184653001000704653001600714653002300730653001500753100001900768700002000787700002100807700001900828856006300847 2004 eng d00aElectronic color charts for dielectric films on silicon0 aElectronic color charts for dielectric films on silicon a1464–14690 v123 a
This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.
10aColor10ameasurement10aoptical properties10aThin films1 aHenrie, Justin1 aKellis, Spencer1 aSchultz, Stephen1 aHawkins, Aaron uhttp://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-146400601nas a2200193 4500008004100000245007500041210006900116260000800185300001400193490000700207653001700214653002100231653003200252653002900284653001200313100001800325700002000343856004400363 2002 eng d00aGeneral parameterization of Auger recombination in crystalline silicon0 aGeneral parameterization of Auger recombination in crystalline s bAIP a2473-24800 v9110aAuger effect10acarrier lifetime10aelectron-hole recombination10aelemental semiconductors10aSILICON1 aKerr, Mark, J1 aCuevas, Andrés uhttp://link.aip.org/link/?JAP/91/2473/101369nas a2200169 4500008004100000022001300041245010100054210006900155260000900224300000800233490000700241520084700248100001801095700002001113700002201133856004401155 2002 eng d a0021897900aGeneralized analysis of quasi-steady-state and transient decay open circuit voltage measurements0 aGeneralized analysis of quasisteadystate and transient decay ope c2002 a3990 v913 aThe current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.1 aKerr, Mark, J1 aCuevas, Andrés1 aSinton, Ronald, A uhttps://www.pveducation.org/id/node/33800574nas a2200181 4500008004100000022001400041245006200055210006200117300001400179490000700193653001200200100002200212700001200234700001300246700001600259700001600275856010100291 2001 eng d a0927-024800aDegradation of carrier lifetime in Cz silicon solar cells0 aDegradation of carrier lifetime in Cz silicon solar cells a219 - 2290 v6510aDefects1 aGlunz, Stefan, W.1 aRein, S1 aWarta, W1 aKnobloch, J1 aWettling, W uhttp://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f00364nas a2200109 4500008004100000245005700041210005600098260002000154100001300174700002300187856004400210 2001 eng d00aNatural Sunlight Calibration of Silicon Solar Cells.0 aNatural Sunlight Calibration of Silicon Solar Cells aMunich, Germany1 aKeogh, W1 aBlakers, Andrew, W uhttps://www.pveducation.org/id/node/33600703nas a2200217 4500008004100000245010900041210006900150260000800219300001400227490000700241653001700248653002100265653003200286653002900318653002200347653001200369100001700381700001800398700002500416856004400441 2000 eng d00aCoulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities0 aCoulombenhanced Auger recombination in crystalline silicon at in bAIP a1494-14970 v8810aAuger effect10acarrier lifetime10aelectron-hole recombination10aelemental semiconductors10aphotoconductivity10aSILICON1 aSchmidt, Jan1 aKerr, Mark, J1 aAltermatt, Pietro, P uhttp://link.aip.org/link/?JAP/88/1494/100421nas a2200145 4500008004100000022001300041245005300054210005300107260000900160300001400169490000600183100002100189700002100210856004400231 1995 eng d a1099159X00aOptical properties of intrinsic silicon at 300 K0 aOptical properties of intrinsic silicon at 300 K c1995 a189 - 1920 v31 aGreen, Martin, A1 aKeevers, Mark, J uhttps://www.pveducation.org/id/node/31600361nas a2200133 4500008004100000022001400041245004200055210004000097260001200137300001200149490000800161100001400169856004400183 1995 eng d a1095-920300aSun’s Role in Warming Is Discounted0 aSun s Role in Warming Is Discounted c04/1995 a28 - 290 v2681 aKerr, R A uhttps://www.pveducation.org/id/node/33700392nas a2200097 4500008004100000245011400041210006900155100001200224700001400236856004400250 1991 eng d00aA Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources0 aSensitivity Analysis of the Spectral Mismatch Correction Procedu1 aKing, D1 aHansen, B uhttps://www.pveducation.org/id/node/34000431nas a2200133 4500008004100000245006200041210006200103260001700165300001600182490000700198100001800205700002100223856005300244 1989 eng d00aRevised optical air mass tables and approximation formula0 aRevised optical air mass tables and approximation formula bOSAc11/1989 a4735–47380 v281 aKasten, Fritz1 aYoung, Andrew, T uhttp://ao.osa.org/abstract.cfm?URI=ao-28-22-473500378nas a2200121 4500008004100000245006000041210006000101300001200161490000700173100001900180700001300199856004400212 1952 eng d00aPhotoelectric Properties of Tonically Bombarded Silicon0 aPhotoelectric Properties of Tonically Bombarded Silicon a802-8150 v311 aKingsbury, E F1 aOhl, R S uhttps://www.pveducation.org/id/node/341