00690nas a2200229 4500008004100000245010800041210006900149260002100218100001600239700001200255700001500267700001500282700001200297700001400309700001600323700001700339700001400356700001400370700001500384700001700399856004400416 2010 eng d00aWorld’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process0 aWorld s Highest Efficiency Triplejunction Solar Cells Fabricated aHonolulu HI, USA1 aTakamoto, T1 aAgui, T1 aYoshida, A1 aNakaido, K1 aJuso, H1 aSasaki, K1 aNakamura, K1 aYamaguchi, H1 aKodama, T1 aWashio, H1 aImazumi, M1 aTakahashi, M uhttps://www.pveducation.org/id/node/39500437nas a2200121 4500008004100000245012200041210006900163300001200232490000700244100001300251700000700264856004400271 2007 eng d00aSeries resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste0 aSeries resistance characterization of industrial silicon solar c a493-5050 v151 aMette, A1 aal uhttps://www.pveducation.org/id/node/35300454nas a2200133 4500008004100000245007300041210006900114100002800183700001500211700001800226700001600244700001600260856004400276 2003 eng d00aDependence of aluminium alloying on solar cell processing conditions0 aDependence of aluminium alloying on solar cell processing condit1 aHonsberg, Christiana, B1 aAnwar, K K1 aMehrvarz, H R1 aCotter, J E1 aWenham, S R uhttps://www.pveducation.org/id/node/33001443nas a2200181 4500008004100000022001300041245010300054210006900157260001600226300000900242490000700251520087500258100002501133700002001158700002001178700001901198856004401217 2003 eng d a0021897900aReassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing0 aReassessment of the intrinsic carrier density in crystalline sil cJan-01-2003 a15980 v933 aThe commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.1 aAltermatt, Pietro, P1 aSchenk, Andreas1 aGeelhaar, Frank1 aHeiser, Gernot uhttps://www.pveducation.org/id/node/54300355nas a2200109 4500008004100000245006200041210006200103260000900165100001200174700001500186856004400201 2003 eng d00aSolar Position Algorithm for Solar Radiation Applications0 aSolar Position Algorithm for Solar Radiation Applications c20031 aReda, I1 aAndreas, A uhttps://www.pveducation.org/id/node/37000538nas a2200169 4500008004100000022001400041245003100055210003100086300001400117490000700131653001900138100002600157700003100183700003000214700002400244856010000268 2001 eng d a0038-092X00aComputing the solar vector0 aComputing the solar vector a431 - 4410 v7010aSolar tracking1 aBlanco-Muriel, Manuel1 aAlarcón-Padilla, Diego, C1 aLópez-Moratalla, Teodoro1 aLara-Coira, MartÍn uhttp://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de99301300nas a2200145 4500008004100000245009100041210006900132300001500201490000700216520074700223100002500970700001600995700001401011856012901025 2001 eng d00aImprovements in numerical modelling of highly injected crystalline silicon solar cells0 aImprovements in numerical modelling of highly injected crystalli a149-155(7)0 v653 a
We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
1 aAltermatt, Pietro, P1 aSinton, R A1 aHeiser, G uhttp://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-100398nas a2200109 4500008004100000245006300041210006300104260003400167490002800201100001500229856004400244 2000 eng d00aAluminium Back Surface Field in Buried Contact Solar Cells0 aAluminium Back Surface Field in Buried Contact Solar Cells bUniversity of New South Wales0 vBachelor of Engineering1 aAnwar, K K uhttps://www.pveducation.org/id/node/27500703nas a2200217 4500008004100000245010900041210006900150260000800219300001400227490000700241653001700248653002100265653003200286653002900318653002200347653001200369100001700381700001800398700002500416856004400441 2000 eng d00aCoulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities0 aCoulombenhanced Auger recombination in crystalline silicon at in bAIP a1494-14970 v8810aAuger effect10acarrier lifetime10aelectron-hole recombination10aelemental semiconductors10aphotoconductivity10aSILICON1 aSchmidt, Jan1 aKerr, Mark, J1 aAltermatt, Pietro, P uhttp://link.aip.org/link/?JAP/88/1494/100475nas a2200121 4500008004100000245013700041210006900178260002900247300000900276100001700285700000700302856004400309 2000 eng d00aMapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques0 aMapping of contact resistance and locating shunts on solar cells aGlasgow (United Kingdom) a14381 aHeide, A S H1 aal uhttps://www.pveducation.org/id/node/32600445nas a2200133 4500008004100000245007500041210006900116300001400185100001500199700001400214700002500228700001400253856004400267 2000 eng d00aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/id/node/29500533nas a2200157 4500008004100000020001800041245007500059210006900134260004600203300001400249100001500263700001400278700002500292700001400317856004400331 2000 eng d a978190291618700aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti aGlasgow UKbJames and Jamesc1-5 May 2000 a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/id/node/29600578nas a2200169 4500008004100000245011900041210006900160260000800229300001400237490000700251653002100258653002200279100001900301700002300320700002100343856004400364 1999 eng d00aGeneralized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors0 aGeneralized analysis of quasisteadystate and quasitransient meas bAIP a6218-62210 v8610acarrier lifetime10aphotoconductivity1 aNagel, Henning1 aBerge, Christopher1 aAberle, Armin, G uhttp://link.aip.org/link/?JAP/86/6218/100484nas a2200157 4500008004100000022001300041245007400054210006900128260000900197300000900206490000700215100001800222700002100240700002100261856004400282 1994 eng d a0021897900aDepartures from the principle of superposition in silicon solar cells0 aDepartures from the principle of superposition in silicon solar c1994 a79200 v761 aRobinson, S J1 aAberle, Armin, G1 aGreen, Martin, A uhttps://www.pveducation.org/id/node/37100447nas a2200121 4500008004100000245009400041210006900135260001900204100002100223700001600244700002100260856004400281 1993 eng d00aA New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells0 aNew Method for the Accurate Measurements of the Lumped Series Re aLouisville, KY1 aAberle, Armin, G1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/id/node/27200418nas a2200145 4500008004100000245005100041210005100092300001200143100001200155700001300167700001100180700002100191700001600212856004400228 1991 eng d00aImprovements in Silicon Solar Cell Performance0 aImprovements in Silicon Solar Cell Performance a399-4021 aZhao, J1 aA., Wang1 aDai, X1 aGreen, Martin, A1 aWenham, S R uhttps://www.pveducation.org/id/node/41500960nas a2200145 4500008004100000022001300041245007800054210006900132260001600201300000900217490000700226520052400233100001300757856004400770 1971 eng d a0021897900aHigh Electron Mobility in Zinc Selenide Through Low-Temperature Annealing0 aHigh Electron Mobility in Zinc Selenide Through LowTemperature A cJan-01-1971 a12040 v423 aElectron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.1 aAven, M. uhttps://www.pveducation.org/id/node/53100373nas a2200109 4500008004100000245007600041210006900117300001200186490000800198100001300206856004400219 1923 eng d00aSur les rayons β secondaires produits dans un gaz par des rayons X0 aSur les rayons beta secondaires produits dans un gaz par des ray a169-1710 v1771 aAuger, P uhttps://www.pveducation.org/id/node/27600319nas a2200121 4500008004100000245003600041210003200077300000800109490000800117100001500125700001300140856004400153 1877 eng d00aThe Action of Light on Selenium0 aAction of Light on Selenium a1130 vA251 aAdams, W G1 aDay, R E uhttps://www.pveducation.org/id/node/273