Biblio

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R. M. Swanson, «Approaching the 29% limit efficiency of silicon solar cells», Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp. 889-94, 2005.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
M. J. Stocks, Carr, A. J., y Blakers, A. W., «Texturing of polycrystalline silicon», Solar Energy Materials and Solar Cells, vol. 40, pp. 33 - 42, 1996.
A. B. Sproul y Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul, Green, M. A., y Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul y Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul, «Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors», Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
R. A. Sinton y Cuevas, A., «A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization», en 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp. 1152–1155.
R. A. Sinton y Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, vol. 34, pp. 1380 - 1389, 1987.
R. A. Sinton y Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
W. Shockley y Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
W. Shockley y Read, W. T., «Statistics of the Recombinations of Holes and Electrons», Physical Review, vol. 87, p. 835, 1952.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
J. N. Shive, «Semiconductor Devices, Chapter 8», New Jersey: Van Nostrand, 1959.
H. B. Serreze, «Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations», 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, pp. 1-8, 1978.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
R. Sekuler y Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
D. Schroder, Semiconductor material and device characterization, 3rd edition.ª ed. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
J. Schmidt, Kerr, M. J., y Altermatt, P. P., «Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities», Journal of Applied Physics, vol. 88, pp. 1494-1497, 2000.
R
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., y Narayanan, S., «Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells», 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
J. R. G. Ross y Smokler, M. I., «Flat-Plate Solar Array Project Final Report», pp. 86-31, 1986.
R. G. Ross, «Flat-Plate Photovoltaic Array Design Optimization», 14th IEEE Photovoltaic Specialists Conference. San Diego, CA, pp. 1126-1132, 1980.
S. J. Robinson, Aberle, A. G., y Green, M. A., «Departures from the principle of superposition in silicon solar cells», Journal of Applied Physics, vol. 76, p. 7920, 1994.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., y Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, vol. 86, n.º 16, 2012.

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