Biblio

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1839
A. E. Becquerel, «Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques», Comptes Rendus de L´Academie des Sciences, vol. 9, pp. 145-149, 1839.
1841
A. E. Becquerel, «Memoire sur les effects d´electriques produits sous l´influence des rayons solaires», Annalen der Physick und Chemie, vol. 54, pp. 35-42, 1841.
1874
F. Braun, «On Conductance in Metal Sulphides», Ann. d. Physik, vol. 153, p. 556, 1874.
1877
W. G. Adams y Day, R. E., «The Action of Light on Selenium», Proceedings of the Royal Society, London, vol. A25, p. 113, 1877.
1883
C. E. Fritts, «On a New Form of Selenium Photocell», American J. of Science, vol. 26, p. 465, 1883.
1900
M. Planck, «Distribution of energy in the normal spectrum», Verhandlungen der Deutschen Physikalischen Gesellschaft, vol. 2, pp. 237-245, 1900.
1901
M. Planck, «Distribution of energy in the spectrum», Annalen der Physik, vol. 4, pp. 553-563, 1901.
1905
A. Einstein, «Generation and transformation of light», Annalen der Physik, vol. 17, 1905.
1918
J. Czochralski, «Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle», Zeitschrift für physikalische Chemie, vol. 92, pp. 219–221, 1918.
1923
P. Auger, «Sur les rayons β secondaires produits dans un gaz par des rayons X», C.R.A.S., vol. 177, pp. 169-171, 1923.
1931
L. Bergmann, «Uber eine neue Selen- Sperrschicht Photozelle», Physikalische Zeitschrift, vol. 32, p. 286, 1931.
1933
L. O. Grondahl, «The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell», Review of Modern Physics, vol. 5, p. 141, 1933.
1934
G. Bauer, «Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen», Annalen der Physik, vol. 411, n.º 4, pp. 434 - 464, 1934.
1939
F. C. Nix y Treptwo, A. W., «A Thallous Sulphide Photo EMF Cell», Journal Opt. Society of America, vol. 29, p. 457, 1939.
1941
R. S. Ohl, «Light-Sensitive Electric Device», U.S. Patent, vol. 2, p. 402, 602, 1941.
1950
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
1952
R. N. Hall, «Electron-Hole Recombination in Germanium», Phys. Rev., vol. 87, p. 387, 1952.
E. F. Kingsbury y Ohl, R. S., «Photoelectric Properties of Tonically Bombarded Silicon», Bell Systems Technical Journal, vol. 31, pp. 802-815, 1952.
W. Shockley y Read, W. T., «Statistics of the Recombinations of Holes and Electrons», Physical Review, vol. 87, p. 835, 1952.
W. G. Pfann, «Zone-refining», Trans. AIME, vol. 194, 1952.
1954
D. M. Chapin, Fuller, C. S., y Pearson, G. L., «A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power», Journal of Applied Physics, vol. 25, pp. 676-677, 1954.
1958
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
1959
J. N. Shive, «Semiconductor Devices, Chapter 8», New Jersey: Van Nostrand, 1959.
1960
B. Dale y Rudenberg, H. G., «High efficiency silicon solar cells», en Proceedings of the 14th Annual Power Sources Conference, 1960, p. 22.
1961
W. Shockley y Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, vol. 32, pp. 510-519, 1961.

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