%0 Journal Article %J IEEE Journal of Photovoltaics %D 2012 %T Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics %A Baker-Finch, Simeon C. %A McIntosh, Keith R. %A Terry, Mason L. %B IEEE Journal of Photovoltaics %V 2 %P 457 - 464 %8 Jan-10-2012 %G eng %N 4 %! IEEE J. Photovoltaics %R 10.1109/JPHOTOV.2012.2206569 %0 Conference Paper %B 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference %D 2012 %T OPAL 2: Rapid optical simulation of silicon solar cells %A McIntosh, Keith R. %A Baker-Finch, Simeon C. %X The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle. %B 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference %I IEEE %C Austin, TX, USA %@ 978-1-4673-0064-3 %G eng %R 10.1109/PVSC.2012.6317616 %0 Conference Paper %B 35th IEEE Photovoltaic Specialists Conference %D 2010 %T Gen III: Improved Performance at Lower Cost %A Peter J. Cousins %A David D. Smith %A Hsin-Chiao Luan %A Jane Manning %A Tim D. Dennis %A Ann Waldhaue %A Karen E. Wilson %A Gabriel Harley %A William P. Mulligan %B 35th IEEE Photovoltaic Specialists Conference %I IEEE %C Honolulu, Hawaii %G eng %0 Conference Proceedings %B 22nd European Photovoltaic Specialist Conference %D 2007 %T Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells %A De Ceuster, D. %A P. Cousins %A D. Rose %A M. Cudzinovic %A W. Mulligan %B 22nd European Photovoltaic Specialist Conference %G eng %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2007 %T A review and comparison of different methods to determine the series resistance of solar cells %A PYSCH, D %A A. Mette %A Stefan W. Glunz %B Solar Energy Materials and Solar Cells %V 91 %P 1698 - 1706 %8 11/2007 %G eng %R 10.1016/j.solmat.2007.05.026 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2007 %T Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste %A A. Mette %A et al %B Progress in Photovoltaics: Research and Applications %V 15 %P 493-505 %G eng %0 Conference Paper %B 4th World Conference on Photovoltaic Energy Conference %D 2006 %T Low Light Performance of Mono-Crystalline Silicon Solar Cells %A Gabriela Bunea %A Karen Wilson %A Yevgeny Meydbray %A Matthew Campbell %A Denis De Ceuster %B 4th World Conference on Photovoltaic Energy Conference %C Waikoloa, HI %P 1312–1314 %8 2006 %G eng %U http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1 %R 10.1109/WCPEC.2006.279655 %0 Conference Proceedings %B 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes %D 2003 %T Dependence of aluminium alloying on solar cell processing conditions %A Christiana B Honsberg %A Anwar, K.K. %A Mehrvarz, H.R. %A Cotter, J.E. %A Wenham, S.R. %B 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes %G eng %0 Journal Article %J Journal of Applied Physics %D 2001 %T On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon %A Daniel Macdonald %A Ronald A. Sinton %A Andrés Cuevas %K CARRIER DENSITY %K carrier lifetime %K electron traps %K electron-hole recombination %K elemental semiconductors %K hole traps %K photoconductivity %K SILICON %K solar cells %B Journal of Applied Physics %I AIP %V 89 %P 2772-2778 %G eng %U http://link.aip.org/link/?JAP/89/2772/1 %R 10.1063/1.1346652 %0 Conference Proceedings %B 16th European Photovoltaic Solar Energy Conference %D 2000 %T The Influence of Edge Recombination on a Solar Cell’s IV Curve %A McIntosh, K. R. %A Christiana B Honsberg %B 16th European Photovoltaic Solar Energy Conference %G eng %0 Conference Proceedings %B National Center for Photovoltaics Program Review Meeting %D 2000 %T Outdoor measurement of 28% efficiency for a mini-concentrator module %A O’Neil, M.J. %A McDanal, A.J. %B National Center for Photovoltaics Program Review Meeting %C Denver, USA %G eng %0 Journal Article %D 2000 %T Solar Electricity %A Tomas Markvart %7 Second Edition %I John Wiley & Sons %C Chichester, England %P 271 %@ 0-471-98853-7 %G eng %U http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-1 %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions %A Einhaus, R. %A Vazsonyi, E. %A Szlufcik, J. %A Nijs, J. %A Mertens, R. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 167-170, 1451 %G eng %0 Conference Proceedings %B Proceedings-of-the-IEEE %D 1997 %T Low-cost industrial technologies of crystalline silicon solar cells %A Szlufcik, J. %A Sivoththaman, S. %A Nlis, J.F. %A Mertens, R.P. %A Van-Overstraeten, R. %B Proceedings-of-the-IEEE %V 85 %P 711-730 %G eng %0 Journal Article %J physica status solidi (a) %D 1997 %T Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications %A Chandramohan, R. %A Sanjeeviraja, C. %A Mahalingam, T. %B physica status solidi (a) %V 163 %P R11 - R12 %8 Jan-10-1997 %G eng %N 2 %! phys. stat. sol. (a) %R 10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3 %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T A simple processing sequence for selective emitters %A Horzel, J. %A Szlufcik, J. %A Nijs, J. %A Mertens, R. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 139-142 %G eng %0 Journal Article %J Journal of Applied Physics %D 1993 %T Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K %A Misiakos, Konstantinos %A Tsamakis, Dimitris %X The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. %B Journal of Applied Physics %V 74 %P 3293 %8 Jan-01-1993 %G eng %N 5 %! J. Appl. Phys. %R 10.1063/1.354551 %0 Journal Article %J IEEE Transactions on Electron Devices %D 1990 %T Minority-carrier transport parameters in n-type silicon %A Wang, C.H. %A Misiakos, K. %A Neugroschel, A. %B IEEE Transactions on Electron Devices %V 37 %P 1314 - 1322 %G eng %R 10.1109/16.108194 %0 Journal Article %J Solar Energy %D 1990 %T Modeling daylight availability and irradiance components from direct and global irradiance %A Richard Perez %A Pierre Ineichen %A Robert Seals %A Joseph Michalsky %A Ronald Stewart %X

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

%B Solar Energy %V 44 %P 271–289 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e %R 10.1016/0038-092X(90)90055-H %0 Journal Article %J Solar Energy %D 1990 %T Modeling daylight availability and irradiance components from direct and global irradiance %A Richard Perez %A Pierre Ineichen %A Robert Seals %A Joseph Michalsky %A Ronald Stewart %B Solar Energy %V 44 %P 271 - 289 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e %R DOI: 10.1016/0038-092X(90)90055-H %0 Conference Proceedings %B 20th IEEE PV Specialists Conference %D 1988 %T SOLAR SIMULATION - PROBLEMS AND SOLUTIONS %A Emery, K. %A Myers, D. %A Rummel, S. %B 20th IEEE PV Specialists Conference %P 1087 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1983 %T Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon %A G. Masetti %A M. Severi %A S. Solmi %K arsenic %K boron %K CARRIER DENSITY %K carrier mobility %K digital simulation %K elemental semiconductors %K heavily doped semiconductors %K phosphorus %K SILICON %X

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

%B IEEE Transactions on Electron Devices %V ED-30 %P 764–9 %G eng %0 Generic %D 1981 %T The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon %A W R Thurber %A Mattis %A Liu %A Filliben %I U.S. Department of Commerce National Bureau of Standards %G eng %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Boron-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K boron %K electrical resistivity %K Hall effect %K hole density %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 2291-2294 %G eng %U http://link.aip.org/link/?JES/127/2291/1 %R 10.1149/1.2129394 %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K density %K electrical resistivity %K electron mobility %K Hall effect %K neutron activation analysis %K phosphorus %K photometry %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 1807-1812 %G eng %U http://link.aip.org/link/?JES/127/1807/1 %R 10.1149/1.2130006 %0 Journal Article %J The Telecommunication Journal of Australia %D 1979 %T Solar Power for Telecommunications %A Mack, M. %B The Telecommunication Journal of Australia %V 29 %P 20-44 %G eng %0 Book %D 1976 %T Applied Solar Energy %A Meinel, A.B. %A Meinel, M.P. %I Addison Wesley Publishing Co. %G eng