%0 Conference Proceedings %B 35 IEEE Photovoltaic Specialist Conference %D 2010 %T World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process %A Takamoto, T. %A Agui, T. %A Yoshida, A. %A Nakaido, K. %A Juso, H. %A Sasaki, K. %A Nakamura, K. %A Yamaguchi, H. %A Kodama, T. %A Washio, H. %A Imazumi, M. %A Takahashi, M. %B 35 IEEE Photovoltaic Specialist Conference %C Honolulu HI, USA %G eng %0 Journal Article %J Applied Physics Letters %D 2005 %T Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence %A Takashi Fuyuki %A Hayato Kondo %A Tsutomu Yamazaki %A Yu Takahashi %A Yukiharu Uraoka %K carrier lifetime %K electroluminescence %K elemental semiconductors %K MINORITY CARRIERS %K SILICON %K solar cells %B Applied Physics Letters %I AIP %V 86 %P 262108 %G eng %U http://link.aip.org/link/?APL/86/262108/1 %R 10.1063/1.1978979 %0 Journal Article %J Optics Express %D 2004 %T Electronic color charts for dielectric films on silicon %A Justin Henrie %A Spencer Kellis %A Stephen Schultz %A Aaron Hawkins %K Color %K measurement %K optical properties %K Thin films %X

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

%B Optics Express %V 12 %P 1464–1469 %G eng %U http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464 %R 10.1364/OPEX.12.001464 %0 Journal Article %J Journal of Applied Physics %D 2002 %T General parameterization of Auger recombination in crystalline silicon %A Mark J Kerr %A Andrés Cuevas %K Auger effect %K carrier lifetime %K electron-hole recombination %K elemental semiconductors %K SILICON %B Journal of Applied Physics %I AIP %V 91 %P 2473-2480 %G eng %U http://link.aip.org/link/?JAP/91/2473/1 %R 10.1063/1.1432476 %0 Journal Article %J Journal of Applied Physics %D 2002 %T Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements %A Mark J Kerr %A Andrés Cuevas %A Ronald A. Sinton %X The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. %B Journal of Applied Physics %V 91 %P 399 %8 2002 %G eng %R 10.1063/1.1416134 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2001 %T Degradation of carrier lifetime in Cz silicon solar cells %A Stefan W. Glunz %A S. Rein %A W. Warta %A J. Knobloch %A W. Wettling %K Defects %B Solar Energy Materials and Solar Cells %V 65 %P 219 - 229 %G eng %U http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f %R DOI: 10.1016/S0927-0248(00)00098-2 %0 Conference Proceedings %B 17th European Photovoltaic Solar Energy Conference %D 2001 %T Natural Sunlight Calibration of Silicon Solar Cells. %A W. Keogh %A Andrew W Blakers %B 17th European Photovoltaic Solar Energy Conference %C Munich, Germany %G eng %0 Journal Article %J Journal of Applied Physics %D 2000 %T Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities %A Jan Schmidt %A Mark J Kerr %A Pietro P Altermatt %K Auger effect %K carrier lifetime %K electron-hole recombination %K elemental semiconductors %K photoconductivity %K SILICON %B Journal of Applied Physics %I AIP %V 88 %P 1494-1497 %G eng %U http://link.aip.org/link/?JAP/88/1494/1 %R 10.1063/1.373878 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1995 %T Optical properties of intrinsic silicon at 300 K %A Martin A Green %A Keevers, Mark J. %B Progress in Photovoltaics: Research and Applications %V 3 %P 189 - 192 %8 1995 %G eng %R 10.1002/pip.4670030303 %0 Journal Article %J Science %D 1995 %T Sun’s Role in Warming Is Discounted %A Kerr, R. A. %B Science %V 268 %P 28 - 29 %8 04/1995 %G eng %R 10.1126/science.268.5207.28 %0 Conference Proceedings %B 22nd IEEE PV Specialists Conference %D 1991 %T A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources %A King, D. %A Hansen, B. %B 22nd IEEE PV Specialists Conference %G eng %0 Journal Article %J Applied Optics %D 1989 %T Revised optical air mass tables and approximation formula %A Fritz Kasten %A Andrew T. Young %B Applied Optics %I OSA %V 28 %P 4735–4738 %8 11/1989 %G eng %U http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735 %R 10.1364/AO.28.004735 %0 Journal Article %J Bell Systems Technical Journal %D 1952 %T Photoelectric Properties of Tonically Bombarded Silicon %A Kingsbury, E.F. %A Ohl, R.S. %B Bell Systems Technical Journal %V 31 %P 802-815 %G eng