%0 Journal Article %J Proceedings of the National Academy of Sciences %D 2012 %T From the Cover: Anomalously weak solar convection %A Hanasoge, S. M. %A Duvall, T. L. %A Sreenivasan, K. R. %X Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. %B Proceedings of the National Academy of Sciences %V 109 %P 11928 - 11932 %8 Dec-07-2013 %G eng %N 30 %! Proceedings of the National Academy of Sciences %R 10.1073/pnas.1206570109 %0 Journal Article %J Physical Review B %D 2012 %T Improved quantitative description of Auger recombination in crystalline silicon %A Richter, Armin %A Stefan W. Glunz %A Werner, Florian %A Jan Schmidt %A Andrés Cuevas %X An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. %B Physical Review B %V 86 %8 Jan-10-2012 %G eng %N 16 %! Phys. Rev. B %R 10.1103/PhysRevB.86.165202 %0 Journal Article %J IEEE Journal of Photovoltaics %D 2012 %T Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics %A Baker-Finch, Simeon C. %A McIntosh, Keith R. %A Terry, Mason L. %B IEEE Journal of Photovoltaics %V 2 %P 457 - 464 %8 Jan-10-2012 %G eng %N 4 %! IEEE J. Photovoltaics %R 10.1109/JPHOTOV.2012.2206569 %0 Conference Paper %B 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference %D 2012 %T OPAL 2: Rapid optical simulation of silicon solar cells %A McIntosh, Keith R. %A Baker-Finch, Simeon C. %X The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle. %B 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference %I IEEE %C Austin, TX, USA %@ 978-1-4673-0064-3 %G eng %R 10.1109/PVSC.2012.6317616 %0 Conference Paper %B 35th IEEE Photovoltaic Specialists Conference %D 2010 %T Gen III: Improved Performance at Lower Cost %A Peter J. Cousins %A David D. Smith %A Hsin-Chiao Luan %A Jane Manning %A Tim D. Dennis %A Ann Waldhaue %A Karen E. Wilson %A Gabriel Harley %A William P. Mulligan %B 35th IEEE Photovoltaic Specialists Conference %I IEEE %C Honolulu, Hawaii %G eng %0 Journal Article %D 2010 %T GISS Surface Temperature Analysis %A NASA %G eng %U http://data.giss.nasa.gov/gistemp/graphs/ %0 Journal Article %D 2010 %T Solar Cell Device Physics %A Stephen J. Fonash %7 Second Edition %I Academic Press %P 400 %@ 978-0-12-374774-7 %G eng %U http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-1 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2010 %T Solar cell efficiency tables (version 35) %A Martin A Green %A Keith Emery %A Yoshihiro Hishikawa %A Wilhelm Warta %K Conversion efficiency %K Energy conversion %K solar cells %K Solar energy %K Solar power generation %X

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.

%B Progress in Photovoltaics: Research and Applications %V 18 %P 144–150 %G eng %U http://dx.doi.org/10.1002/pip.974 %0 Conference Proceedings %B 35 IEEE Photovoltaic Specialist Conference %D 2010 %T World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process %A Takamoto, T. %A Agui, T. %A Yoshida, A. %A Nakaido, K. %A Juso, H. %A Sasaki, K. %A Nakamura, K. %A Yamaguchi, H. %A Kodama, T. %A Washio, H. %A Imazumi, M. %A Takahashi, M. %B 35 IEEE Photovoltaic Specialist Conference %C Honolulu HI, USA %G eng %0 Conference Proceedings %B 34th IEEE Photovoltaic Specialists Conference %D 2009 %T METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY %A F. Dimroth %A W. Guter %A J. Schöne %A E. Welser %A M. Steiner %A E. Oliva %A A. Wekkeli %A G. Siefer %A S.P. Philipps %A A.W. Bett %B 34th IEEE Photovoltaic Specialists Conference %G eng %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2009 %T The path to 25% silicon solar cell efficiency: History of silicon cell evolution %A Martin A Green %B Progress in Photovoltaics: Research and Applications %V 17 %P 183-189 %G eng %0 Journal Article %D 2009 %T Physics of Solar Cells %A Peter Würfel %7 2nd, updated and expanded edition %I Wiley-VCH %C Mörlenbach, Germany %P 183 %@ 978-3-527-40857-3 %G eng %U http://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/3527404287 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2008 %T Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method %A S. P. Bremner %A M. Y. Levy %A Christiana B Honsberg %X

We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.

%B Progress in Photovoltaics: Research and Applications %V 16 %P 225–233 %G eng %U http://dx.doi.org/10.1002/pip.799 %R 10.1002/pip.799 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2008 %T Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients %A Martin A Green %K Absorption coefficient %K optical properties %K SILICON SOLAR CELLS %X An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range. %B Solar Energy Materials and Solar Cells %V 92 %P 1305–1310 %G eng %U http://www.sciencedirect.com/science/article/pii/S0927024808002158 %R 10.1016/j.solmat.2008.06.009 %0 Journal Article %D 2007 %T Applied Photovoltaics %A Wenham, S.R. %A Martin A Green %A Watt, M. E. %A R. Corkish %X
%I Earthscan %C London, UK %P 317 %@ 1-84407-401-3 %G eng %U http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1 %0 Conference Proceedings %B 22nd European Photovoltaic Specialist Conference %D 2007 %T Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells %A De Ceuster, D. %A P. Cousins %A D. Rose %A M. Cudzinovic %A W. Mulligan %B 22nd European Photovoltaic Specialist Conference %G eng %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2007 %T A review and comparison of different methods to determine the series resistance of solar cells %A PYSCH, D %A A. Mette %A Stefan W. Glunz %B Solar Energy Materials and Solar Cells %V 91 %P 1698 - 1706 %8 11/2007 %G eng %R 10.1016/j.solmat.2007.05.026 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2007 %T Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste %A A. Mette %A et al %B Progress in Photovoltaics: Research and Applications %V 15 %P 493-505 %G eng %0 Journal Article %J Proceedings of the National Academy of Sciences %D 2006 %T Global temperature change %A Hansen, J. %B Proceedings of the National Academy of Sciences %V 103 %P 14288 - 14293 %8 09/2006 %G eng %R 10.1073/pnas.0606291103 %0 Conference Paper %B 4th World Conference on Photovoltaic Energy Conference %D 2006 %T Low Light Performance of Mono-Crystalline Silicon Solar Cells %A Gabriela Bunea %A Karen Wilson %A Yevgeny Meydbray %A Matthew Campbell %A Denis De Ceuster %B 4th World Conference on Photovoltaic Energy Conference %C Waikoloa, HI %P 1312–1314 %8 2006 %G eng %U http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1 %R 10.1109/WCPEC.2006.279655 %0 Journal Article %J Solid-State Electronics %D 2006 %T Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications %A M. Y. Levy %A Christiana B Honsberg %B Solid-State Electronics %V 50 %P 1400-1405 %G eng %0 Book %D 2006 %T Semiconductor material and device characterization %A Dieter Schroder %7 3rd edition %I IEEE Press; Wiley %C Piscataway NJ; Hoboken N.J. %@ 9780471739067 %G eng %0 Conference Proceedings %B Thirty-First IEEE Photovoltaic Specialists Conference %D 2005 %T Approaching the 29% limit efficiency of silicon solar cells %A Richard M Swanson %B Thirty-First IEEE Photovoltaic Specialists Conference %I 01/2005 %C Lake buena Vista, FL, USA %P 889-94 %G eng %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2005 %T Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon %A Bothe, Karsten %A Sinton, Ron %A Jan Schmidt %B Progress in Photovoltaics: Research and Applications %V 13 %P 287 - 296 %8 06/2005 %G eng %R 10.1002/pip.586 %0 Journal Article %J Applied Physics Letters %D 2005 %T Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence %A Takashi Fuyuki %A Hayato Kondo %A Tsutomu Yamazaki %A Yu Takahashi %A Yukiharu Uraoka %K carrier lifetime %K electroluminescence %K elemental semiconductors %K MINORITY CARRIERS %K SILICON %K solar cells %B Applied Physics Letters %I AIP %V 86 %P 262108 %G eng %U http://link.aip.org/link/?APL/86/262108/1 %R 10.1063/1.1978979 %0 Journal Article %D 2005 %T Photovoltaic Solar Energy Generation %A Adolf Goetzberger %A Volker Uwe Hoffmann %I Springer %C Berlin, Germany %P 232 %@ 3-540-23676-7 %G eng %U http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books&ie=UTF8&qid=1279649098&sr=1-2 %0 Journal Article %J Optics Express %D 2004 %T Electronic color charts for dielectric films on silicon %A Justin Henrie %A Spencer Kellis %A Stephen Schultz %A Aaron Hawkins %K Color %K measurement %K optical properties %K Thin films %X

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

%B Optics Express %V 12 %P 1464–1469 %G eng %U http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464 %R 10.1364/OPEX.12.001464 %0 Conference Proceedings %B 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes %D 2003 %T Dependence of aluminium alloying on solar cell processing conditions %A Christiana B Honsberg %A Anwar, K.K. %A Mehrvarz, H.R. %A Cotter, J.E. %A Wenham, S.R. %B 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes %G eng %0 Journal Article %D 2003 %T Handbook of Photovoltaic Science and Engineering %A Luque, A. %A Hegedus, S. %I John Wiley & Sons Ltd. %C Chichester, England %P 1117 %@ 0-471-49196-9 %G eng %U http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7 %0 Journal Article %D 2003 %T The Physics of Solar Cells %A Jenny Nelson %X
%I Imperial College Press %C London, UK %P 355 %@ 1-86094-340-3 %G eng %U http://www.amazon.com/Physics-Solar-Properties-Semiconductor-Materials/dp/1860943497 %0 Journal Article %J Journal of Applied Physics %D 2003 %T Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing %A Pietro P Altermatt %A Schenk, Andreas %A Geelhaar, Frank %A Heiser, Gernot %X The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved. %B Journal of Applied Physics %V 93 %P 1598 %8 Jan-01-2003 %G eng %N 3 %! J. Appl. Phys. %R 10.1063/1.1529297 %0 Journal Article %D 2003 %T Solar Position Algorithm for Solar Radiation Applications %A Reda, I %A Andreas, A %8 2003 %G eng %0 Journal Article %J Journal of Applied Physics %D 2002 %T General parameterization of Auger recombination in crystalline silicon %A Mark J Kerr %A Andrés Cuevas %K Auger effect %K carrier lifetime %K electron-hole recombination %K elemental semiconductors %K SILICON %B Journal of Applied Physics %I AIP %V 91 %P 2473-2480 %G eng %U http://link.aip.org/link/?JAP/91/2473/1 %R 10.1063/1.1432476 %0 Journal Article %J Journal of Applied Physics %D 2002 %T Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements %A Mark J Kerr %A Andrés Cuevas %A Ronald A. Sinton %X The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. %B Journal of Applied Physics %V 91 %P 399 %8 2002 %G eng %R 10.1063/1.1416134 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2001 %T 24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates %A Zhao, J. %A Aihua Wang %A Martin A Green %B Solar Energy Materials and Solar Cells %V 66 %P 27 - 36 %G eng %R 10.1016/S0927-0248(00)00155-0 %0 Journal Article %J Solar Energy %D 2001 %T Computing the solar vector %A Manuel Blanco-Muriel %A Diego C. Alarcón-Padilla %A Teodoro López-Moratalla %A MartÍn Lara-Coira %K Solar tracking %B Solar Energy %V 70 %P 431 - 441 %G eng %U http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993 %R DOI: 10.1016/S0038-092X(00)00156-0 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2001 %T Degradation of carrier lifetime in Cz silicon solar cells %A Stefan W. Glunz %A S. Rein %A W. Warta %A J. Knobloch %A W. Wettling %K Defects %B Solar Energy Materials and Solar Cells %V 65 %P 219 - 229 %G eng %U http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f %R DOI: 10.1016/S0927-0248(00)00098-2 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2001 %T High performance light trapping textures for monocrystalline silicon solar cells %A Campbell, Patrick %A Martin A Green %X Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications. %B Solar Energy Materials and Solar Cells %V 65 %P 369 - 375 %8 Jan-01-2001 %G eng %N 1-4 %! Solar Energy Materials and Solar Cells %R 10.1016/S0927-0248(00)00115-X %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2001 %T Improvements in numerical modelling of highly injected crystalline silicon solar cells %A Pietro P Altermatt %A Sinton, R.A. %A G. Heiser %X

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

%B Solar Energy Materials and Solar Cells %V 65 %P 149-155(7) %G eng %U http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1 %0 Conference Proceedings %B 17th European Photovoltaic Solar Energy Conference %D 2001 %T Natural Sunlight Calibration of Silicon Solar Cells. %A W. Keogh %A Andrew W Blakers %B 17th European Photovoltaic Solar Energy Conference %C Munich, Germany %G eng %0 Conference Proceedings %B 17th European Photovoltaic Solar Energy Conference %D 2001 %T A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits %A Christiana B Honsberg %A R. Corkish %A S. P. Bremner %B 17th European Photovoltaic Solar Energy Conference %P 22-26 %G eng %0 Conference Paper %B 17th European Photovoltaic Solar Energy Conference %D 2001 %T Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells %A S. Bowden %A A. Rohatgi %B 17th European Photovoltaic Solar Energy Conference %C Munich, Germany %8 22/10/2001 %G eng %0 Journal Article %J Journal of Applied Physics %D 2001 %T On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon %A Daniel Macdonald %A Ronald A. Sinton %A Andrés Cuevas %K CARRIER DENSITY %K carrier lifetime %K electron traps %K electron-hole recombination %K elemental semiconductors %K hole traps %K photoconductivity %K SILICON %K solar cells %B Journal of Applied Physics %I AIP %V 89 %P 2772-2778 %G eng %U http://link.aip.org/link/?JAP/89/2772/1 %R 10.1063/1.1346652 %0 Thesis %D 2000 %T Aluminium Back Surface Field in Buried Contact Solar Cells %A Anwar, K.K. %I University of New South Wales %V Bachelor of Engineering %G eng %9 masters %0 Journal Article %J Journal of Applied Physics %D 2000 %T Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities %A Jan Schmidt %A Mark J Kerr %A Pietro P Altermatt %K Auger effect %K carrier lifetime %K electron-hole recombination %K elemental semiconductors %K photoconductivity %K SILICON %B Journal of Applied Physics %I AIP %V 88 %P 1494-1497 %G eng %U http://link.aip.org/link/?JAP/88/1494/1 %R 10.1063/1.373878 %0 Conference Proceedings %B 16th European Photovoltaic Solar Energy Conference %D 2000 %T The Influence of Edge Recombination on a Solar Cell’s IV Curve %A McIntosh, K. R. %A Christiana B Honsberg %B 16th European Photovoltaic Solar Energy Conference %G eng %0 Conference Proceedings %B 16th European Photovoltaic Solar Energy Conference %D 2000 %T Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques %A A.S.H. van der Heide %A et al %B 16th European Photovoltaic Solar Energy Conference %C Glasgow (United Kingdom) %P 1438 %G eng %0 Conference Proceedings %B National Center for Photovoltaics Program Review Meeting %D 2000 %T Outdoor measurement of 28% efficiency for a mini-concentrator module %A O’Neil, M.J. %A McDanal, A.J. %B National Center for Photovoltaics Program Review Meeting %C Denver, USA %G eng %0 Conference Paper %B 16th European Photovoltaic Solar Energy Conference %D 2000 %T A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization %A Sinton, R.A. %A Andrés Cuevas %B 16th European Photovoltaic Solar Energy Conference %C Glasgow, Scotland %P 1152–1155 %8 05/2000 %G eng %0 Conference Proceedings %B 16h European Solar Energy Conference %D 2000 %T Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions %A R. Corkish %A Luke, K. L. %A Pietro P Altermatt %A G. Heiser %B 16h European Solar Energy Conference %P 1590-1593 %G eng %0 Conference Paper %B Proceedings of the 16h European Solar Energy Conference %D 2000 %T Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions %A R. Corkish %A Luke, K. L. %A Pietro P Altermatt %A G. Heiser %B Proceedings of the 16h European Solar Energy Conference %I James and James %C Glasgow UK %P 1590-1593 %8 1-5 May 2000 %@ 9781902916187 %G eng %0 Journal Article %D 2000 %T Solar Electricity %A Tomas Markvart %7 Second Edition %I John Wiley & Sons %C Chichester, England %P 271 %@ 0-471-98853-7 %G eng %U http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-1 %0 Book %D 2000 %T Solid State Electronic Devices %A Ben G. Streetman %I Prentice Hall %G eng %0 Journal Article %J Journal of Applied Physics %D 1999 %T Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors %A Henning Nagel %A Christopher Berge %A Armin G Aberle %K carrier lifetime %K photoconductivity %B Journal of Applied Physics %I AIP %V 86 %P 6218-6221 %G eng %U http://link.aip.org/link/?JAP/86/6218/1 %R 10.1063/1.371633 %0 Conference Proceedings %B 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion %D 1998 %T 19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface %A Zhao, J. %A Wang, A. %A Martin A Green %B 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion %C Vienna, Austria %G eng %0 Journal Article %J Applied Physics Letters %D 1998 %T 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells %A Jianhua Zhao %A Aihua Wang %A Martin A Green %A Francesca Ferrazza %K elemental semiconductors %K SILICON %K solar cells %K surface texture %B Applied Physics Letters %I AIP %V 73 %P 1991-1993 %G eng %U http://link.aip.org/link/?APL/73/1991/1 %R 10.1063/1.122345 %0 Conference Proceedings %B 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion %D 1998 %T Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells %A Ruby, D. S. %A Yang, P. %A Zaidi, S. %A Brueck, S. %A Roy, M. %A Narayanan, S. %B 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion %C Vienna, Austria %8 07/1998 %G eng %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1997 %T 20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race %A Zhao, J. %A Wang, A. %A Yun, F. %A Zhang, G. %A Roche, D.M. %A Wenham, S.R. %A Martin A Green %B Progress in Photovoltaics: Research and Applications %V 5 %P 269–276 %G eng %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions %A Einhaus, R. %A Vazsonyi, E. %A Szlufcik, J. %A Nijs, J. %A Mertens, R. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 167-170, 1451 %G eng %0 Conference Proceedings %B Proceedings-of-the-IEEE %D 1997 %T Low-cost industrial technologies of crystalline silicon solar cells %A Szlufcik, J. %A Sivoththaman, S. %A Nlis, J.F. %A Mertens, R.P. %A Van-Overstraeten, R. %B Proceedings-of-the-IEEE %V 85 %P 711-730 %G eng %0 Journal Article %J physica status solidi (a) %D 1997 %T Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications %A Chandramohan, R. %A Sanjeeviraja, C. %A Mahalingam, T. %B physica status solidi (a) %V 163 %P R11 - R12 %8 Jan-10-1997 %G eng %N 2 %! phys. stat. sol. (a) %R 10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1997 %T Recent progress in MIS solar cells %A Hezel, R. %B Progress in Photovoltaics: Research and Applications %V 5 %P 109-120 %G eng %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T A simple processing sequence for selective emitters %A Horzel, J. %A Szlufcik, J. %A Nijs, J. %A Mertens, R. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 139-142 %G eng %0 Conference Proceedings %B Twenty Sixth IEEE Photovoltaic Specialists Conference %D 1997 %T Surface texturing using reactive ion etching for multicrystalline silicon solar cells %A Fukui, K. %A Inomata, Y. %A Shirasawa, K. %B Twenty Sixth IEEE Photovoltaic Specialists Conference %C New York, NY, USA %P 1451, 47-50 %G eng %0 Journal Article %J Applied Physics Letters %D 1996 %T Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data %A Ronald A. Sinton %A Andrés Cuevas %K carrier lifetime %K CV CHARACTERISTIC %K MINORITY CARRIERS %K photoconductivity %K SEMICONDUCTOR MATERIALS %K SILICON %K STEADY – STATE CONDITIONS %B Applied Physics Letters %I AIP %V 69 %P 2510-2512 %G eng %U http://link.aip.org/link/?APL/69/2510/1 %R 10.1063/1.117723 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 1996 %T Texturing of polycrystalline silicon %A M. J. Stocks %A A. J. Carr %A Andrew W Blakers %B Solar Energy Materials and Solar Cells %V 40 %P 33 - 42 %G eng %U http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541 %R DOI: 10.1016/0927-0248(95)00077-1 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1995 %T Optical properties of intrinsic silicon at 300 K %A Martin A Green %A Keevers, Mark J. %B Progress in Photovoltaics: Research and Applications %V 3 %P 189 - 192 %8 1995 %G eng %R 10.1002/pip.4670030303 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 1995 %T On some thermodynamic aspects of photovoltaic solar energy conversion %A Baruch, P. %A De Vos, A. %A Landsberg, P. T. %A J.E. Parrott %B Solar Energy Materials and Solar Cells %V 36 %P 201-222 %G eng %0 Journal Article %J Science %D 1995 %T Sun’s Role in Warming Is Discounted %A Kerr, R. A. %B Science %V 268 %P 28 - 29 %8 04/1995 %G eng %R 10.1126/science.268.5207.28 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1994 %T 7000 High Efficiency Cells for a Dream %A Verlinden, P.J. %A Richard M Swanson %A Crane, R.A. %B Progress in Photovoltaics: Research and Applications %V 2 %P 143 - 152 %G eng %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1994 %T Attaining Thirty-Year Photovoltaic System Lifetime %A Durand, S. %B Progress in Photovoltaics: Research and Applications %G eng %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1994 %T Buried contact concentrator solar cells %A Jordan, D. %A Nagle, J.P. %B Progress in Photovoltaics: Research and Applications %V 2 %P 171-176 %G eng %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1994 %T Defining terms for crystalline silicon solar cells %A Basore, P.A. %B Progress in Photovoltaics: Research and Applications %V 2 %P 177-179 %G eng %0 Journal Article %J Journal of Applied Physics %D 1994 %T Departures from the principle of superposition in silicon solar cells %A Robinson, S. J. %A Armin G Aberle %A Martin A Green %B Journal of Applied Physics %V 76 %P 7920 %8 1994 %G eng %R 10.1063/1.357902 %0 Journal Article %J Journal of Applied Physics %D 1994 %T Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors %A A. B. Sproul %K ANALYTICAL SOLUTION %K carrier lifetime %K DECAY %K MINORITY CARRIERS %K RECOMBINATION %K SEMICONDUCTOR MATERIALS %K SURFACES %B Journal of Applied Physics %I AIP %V 76 %P 2851-2854 %G eng %U http://link.aip.org/link/?JAP/76/2851/1 %R 10.1063/1.357521 %0 Book %D 1994 %T {VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition %A Ghandhi, Sorab K. %7 2 %I Wiley-Interscience %@ 0471580058 %G eng %0 Journal Article %J Journal of Applied Physics %D 1993 %T Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K %A Misiakos, Konstantinos %A Tsamakis, Dimitris %X The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. %B Journal of Applied Physics %V 74 %P 3293 %8 Jan-01-1993 %G eng %N 5 %! J. Appl. Phys. %R 10.1063/1.354551 %0 Journal Article %J Solar Energy %D 1993 %T Choice of an equivalent black body solar temperature %A J.E. Parrott %B Solar Energy %V 51 %P 195 - 195 %8 09/1993 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb6 %R DOI: 10.1016/0038-092X(93)90096-7 %0 Conference Paper %B Proceedings of the 23rd IEEE Photovoltaic Specialists Conference %D 1993 %T A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells %A Armin G Aberle %A Wenham, S.R. %A Martin A Green %B Proceedings of the 23rd IEEE Photovoltaic Specialists Conference %C Louisville, KY %G eng %0 Journal Article %J Solar Energy Materials and Solar Cells %D 1992 %T A simple and effective light trapping technique for polycrystalline silicon solar cells %A G. Willeke %A H. Nussbaumer %A H. Bender %A E. Bucher %B Solar Energy Materials and Solar Cells %V 26 %P 345 - 356 %G eng %U http://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c51 %R DOI: 10.1016/0927-0248(92)90054-S %0 Book %D 1992 %T Solar Cells - Operating Principles, Technology and System Application %A Martin A Green %I University of NSW %C Kensington, Australia %G eng %0 Conference Proceedings %B Twenty Second IEEE Photovoltaic Specialists Conference %D 1991 %T Buried contact concentrator solar cells %A Wohlgemuth, J.H. %A Narayanan, S. %B Twenty Second IEEE Photovoltaic Specialists Conference %V 1 %P 273-277 %G eng %0 Conference Proceedings %B 22nd IEEE Photovoltaic Specialists Conference %D 1991 %T Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates %A Wenger, H.J. %A Schaefer, J. %A Rosenthal, A. %A Hammond, B. %A Schlueter, L. %B 22nd IEEE Photovoltaic Specialists Conference %C Las Vegas, USA %P 586-592 %G eng %0 Journal Article %J Journal of Applied Physics %D 1991 %T Improved value for the silicon intrinsic carrier concentration from 275 to 375 K %A A. B. Sproul %A Martin A Green %K CARRIER DENSITY %K IV CHARACTERISTIC %K JUNCTION DIODES %K MEDIUM TEMPERATURE %K MINORITY CARRIERS %K SANDIA LABORATORIES %K SILICON %K SILICON DIODES %K TEMPERATURE DEPENDENCE %B Journal of Applied Physics %I AIP %V 70 %P 846-854 %G eng %U http://link.aip.org/link/?JAP/70/846/1 %R 10.1063/1.349645 %0 Journal Article %J Journal of Applied Physics %D 1991 %T Improved value for the silicon intrinsic carrier concentration from 275 to 375 K %A A. B. Sproul %A Martin A Green %B Journal of Applied Physics %V 70 %P 846 %8 1991 %G eng %R 10.1063/1.349645 %0 Conference Proceedings %B 22nd IEEE PV Specialists Conference %D 1991 %T Improvements in Silicon Solar Cell Performance %A Zhao, J. %A Wang A. %A Dai, X. %A Martin A Green %A Wenham, S.R. %B 22nd IEEE PV Specialists Conference %P 399-402 %G eng %0 Book %D 1991 %T The Role of Photovoltaics in Reducing Greenhouse Gas Emissions %A Andrew W Blakers %A Martin A Green %A T. Leo %A H. Outhred %A B. Robins %I Australian Government Publishing Service %C Canberra %G eng %0 Conference Proceedings %B 22nd IEEE PV Specialists Conference %D 1991 %T A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources %A King, D. %A Hansen, B. %B 22nd IEEE PV Specialists Conference %G eng %0 Conference Proceedings %B Twenty First IEEE Photovoltaic Specialists Conference %D 1990 %T 18% efficient polycrystalline silicon solar cells %A Narayanan, S. %A Zolper, J. %A Yun, F. %A Wenham, S.R. %A A. B. Sproul %A Chong,C.M. %A Martin A Green %B Twenty First IEEE Photovoltaic Specialists Conference %V 1 %P 678-680 %G eng %0 Journal Article %J Applied Physics Letters %D 1990 %T Improved value for the silicon intrinsic carrier concentration at 300 K %A A. B. Sproul %A Martin A Green %A Zhao, J. %B Applied Physics Letters %V 57 %P 255 %8 1990 %G eng %R 10.1063/1.103707 %0 Journal Article %J IEEE Transactions on Electron Devices %D 1990 %T Minority-carrier transport parameters in n-type silicon %A Wang, C.H. %A Misiakos, K. %A Neugroschel, A. %B IEEE Transactions on Electron Devices %V 37 %P 1314 - 1322 %G eng %R 10.1109/16.108194 %0 Journal Article %J Solar Energy %D 1990 %T Modeling daylight availability and irradiance components from direct and global irradiance %A Richard Perez %A Pierre Ineichen %A Robert Seals %A Joseph Michalsky %A Ronald Stewart %B Solar Energy %V 44 %P 271 - 289 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e %R DOI: 10.1016/0038-092X(90)90055-H %0 Journal Article %J Solar Energy %D 1990 %T Modeling daylight availability and irradiance components from direct and global irradiance %A Richard Perez %A Pierre Ineichen %A Robert Seals %A Joseph Michalsky %A Ronald Stewart %X

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

%B Solar Energy %V 44 %P 271–289 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e %R 10.1016/0038-092X(90)90055-H %0 Journal Article %J Electron Devices, IEEE Transactions on %D 1990 %T Numerical modeling of textured silicon solar cells using PC-1D %A Basore, P.A. %K elemental semiconductors %K finite element analysis %K finite-element program %K front-surface recombination %K heavy doping %K high-level injection %K internal performance %K light trapping %K microcomputer applications %K modeling semiconductor devices %K multidimensional effects %K nonplanar structures %K numerical models %K oblique photon path angles %K PC-1D %K PC-1D Version 2 %K personal computers %K semiconductor device models %K semiconductors %K Si %K SILICON %K solar cells %K spectral quantum efficiency data %K textured solar cells %K transients %X PC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells %B Electron Devices, IEEE Transactions on %V 37 %P 337 -343 %8 02/1990 %G eng %R 10.1109/16.46362 %0 Conference Proceedings %B 21st IEEE Photovoltaic Specialists Conference %D 1990 %T Photovoltaics: Coming of Age %A Martin A Green %X The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential. %B 21st IEEE Photovoltaic Specialists Conference %C Orlando, USA %P 1-8 %8 05/1990 %G eng %U http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582 %R 10.1109/PVSC.1990.111582 %0 Journal Article %J Applied Physics Letters %D 1989 %T 16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell %A John C. Zolper %A Srinivasamohan Narayanan %A Stuart R. Wenham %A Martin A Green %B Applied Physics Letters %V 55 %P 2363 %G eng %U http://apl.aip.org/applab/v55/i22/p2363_s1 %R 10.1063/1.102019 %0 Journal Article %J Applied Optics %D 1989 %T Revised optical air mass tables and approximation formula %A Fritz Kasten %A Andrew T. Young %B Applied Optics %I OSA %V 28 %P 4735–4738 %8 11/1989 %G eng %U http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735 %R 10.1364/AO.28.004735 %0 Generic %D 1988 %T Buried contact solar cell %A Stuart R. Wenham %A Martin A Green %8 February %G eng %U http://www.freepatentsonline.com/4726850.html %0 Conference Proceedings %B 20th IEEE PV Specialists Conference %D 1988 %T SOLAR SIMULATION - PROBLEMS AND SOLUTIONS %A Emery, K. %A Myers, D. %A Rummel, S. %B 20th IEEE PV Specialists Conference %P 1087 %G eng %0 Journal Article %J Journal of Applied Physics %D 1987 %T Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity %A Keung L. Luke %A Li-Jen Cheng %K carrier lifetime %K LASERRADIATION HEATING %K MINORITY CARRIERS %K RECOMBINATION %K SILICON %K SILICON SOLAR CELLS %K SURFACE PROPERTIES %K THEORETICAL DATA %K VELOCITY %K WAFERS %B Journal of Applied Physics %I AIP %V 61 %P 2282-2293 %G eng %U http://link.aip.org/link/?JAP/61/2282/1 %R 10.1063/1.337938 %0 Journal Article %J Journal of Applied Physics %D 1987 %T Light trapping properties of pyramidally textured surfaces %A Campbell, Patrick %A Martin A Green %B Journal of Applied Physics %V 62 %P 243 %8 Jan-01-1987 %G eng %N 1 %! J. Appl. Phys. %R 10.1063/1.339189 %0 Journal Article %J Electron Devices, IEEE Transactions on %D 1987 %T Recombination in highly injected silicon %A Sinton, R.A. %A Richard M Swanson %B Electron Devices, IEEE Transactions on %V 34 %P 1380 - 1389 %8 jun %G eng %0 Journal Article %D 1986 %T Flat-Plate Solar Array Project Final Report %A Ross, R.G. Jnr. %A Smokler, M.I. %I Jet Propulsion Laboratory %P 86-31 %G eng %0 Journal Article %J Journal of Applied Physics %D 1985 %T Calculation of surface generation and recombination velocities at the Si-SiO2 interface %A Eades, Wendell D. %A Richard M Swanson %B Journal of Applied Physics %V 58 %P 4267 %8 1985 %G eng %R 10.1063/1.335562 %0 Book %D 1985 %T Perception %A Sekuler, R. %A Blake, R. %I Alfred A. Knopf Inc %C New York %G eng %0 Book %B Princeton University Press, Princeton NJ %D 1985 %T QED : The Strange Theory of Light and Matter %A Feynman, R. P. %B Princeton University Press, Princeton NJ %G eng %0 Journal Article %J IEEE TRANSACTIONS ON ELECTRON DEVICES %D 1984 %T Limiting Efficiency of Silicon Solar Cells %A T. Tiedje %A E Yablonovich %A G.D. Cody %A B.G. Brooks %B IEEE TRANSACTIONS ON ELECTRON DEVICES %V ED-31 %8 05/1984 %G eng %0 Book %D 1984 %T Photovoltaics for Residential Applications %A SERI %I Solar Energy Research Institute %C Golden, Colorado %0 Journal Article %J IEEE Transactions on Electron Devices %D 1983 %T Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon %A G. Masetti %A M. Severi %A S. Solmi %K arsenic %K boron %K CARRIER DENSITY %K carrier mobility %K digital simulation %K elemental semiconductors %K heavily doped semiconductors %K phosphorus %K SILICON %X

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

%B IEEE Transactions on Electron Devices %V ED-30 %P 764–9 %G eng %0 Journal Article %J On Phosphorus Diffusion in Silicon %D 1983 %T On Phosphorus Diffusion in Silicon %A S.M. Hu %A P. Fahey %A P. Sutton %B On Phosphorus Diffusion in Silicon %V 54 %P 6912-6922 %G eng %0 Book %D 1983 %T Solar Cells: From Basic to Advanced Systems %A Hu, C %A White, R.M. %I McGraw-Hill %C New York %G eng %0 Book Section %D 1983 %T Voltaic Cell, Chapter XIV %A P. Benjamin %I Wiley %C New York %G eng %0 Journal Article %J Solar Cells %D 1982 %T Accuracy of Analytical Expressions for Solar Cell Fill Factors %A Martin A Green %B Solar Cells %V 7 %P 337-340 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1982 %T Intensity Enhancement in Textured Optical Sheets for Solar Cells %A E Yablonovich %A G.D. Cody %B IEEE Transactions on Electron Devices %V ED-29 %P 300-305 %G eng %0 Journal Article %D 1982 %T Solar Cells: Operating Principles, Technology and System Applications %A Martin A Green %X
%I Prentice-Hall %P 274 %@ 0-85823-580-3 %G eng %0 Generic %D 1981 %T The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon %A W R Thurber %A Mattis %A Liu %A Filliben %I U.S. Department of Commerce National Bureau of Standards %G eng %0 Journal Article %J Solid-State Electronics %D 1981 %T Solar cell fill factors: General graph and empirical expressions %A Martin A Green %B Solid-State Electronics %V 24 %P 788 - 789 %G eng %R 10.1016/0038-1101(81)90062-9 %0 Conference Proceedings %B 14th IEEE Photovoltaic Specialists Conference %D 1980 %T Flat-Plate Photovoltaic Array Design Optimization %A Ross, R.G. %B 14th IEEE Photovoltaic Specialists Conference %C San Diego, CA %P 1126-1132 %G eng %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Boron-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K boron %K electrical resistivity %K Hall effect %K hole density %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 2291-2294 %G eng %U http://link.aip.org/link/?JES/127/2291/1 %R 10.1149/1.2129394 %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K density %K electrical resistivity %K electron mobility %K Hall effect %K neutron activation analysis %K phosphorus %K photometry %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 1807-1812 %G eng %U http://link.aip.org/link/?JES/127/1807/1 %R 10.1149/1.2130006 %0 Book Section %D 1980 %T Solar Energy Utilisation %A G.D. Rai %I Khanna Publishers %P 44 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1979 %T Application of the superposition principle to solar-cell analysis %A F.A. Lindholm %A Fossum, J.G. %A E.L. Burgess %X The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level). %B IEEE Transactions on Electron Devices %V 26 %P 165–171 %G eng %0 Journal Article %J The Telecommunication Journal of Australia %D 1979 %T Solar Power for Telecommunications %A Mack, M. %B The Telecommunication Journal of Australia %V 29 %P 20-44 %G eng %0 Generic %D 1979 %T United States Patent: 4137123 - Texture etching of silicon: method %A William L. Bailey %A Michael G. Coleman %A Cynthia B. Harris %A Israel A. Lesk %X

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

%G eng %U http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 %0 Conference Proceedings %B 13th IEEE Photovoltaic Specialists Conference %D 1978 %T Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations %A H.B. Serreze %B 13th IEEE Photovoltaic Specialists Conference %C Washington, D.C., USA %P 1-8 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1977 %T Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination %A Card, H.C. %A Yang, E.S. %B IEEE Transactions on Electron Devices %V ED-24 %P 397-402 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1977 %T Physical operation of back-surface-field silicon solar cells %A Fossum, J.G. %X

Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.

%B IEEE Transactions on Electron Devices %V 24 %P 322 - 325 %8 04/1977 %G eng %0 Book %D 1976 %T Applied Solar Energy %A Meinel, A.B. %A Meinel, M.P. %I Addison Wesley Publishing Co. %G eng %0 Conference Proceedings %D 1976 %T Historical Development of Solar Cells %A M. Wolf %I IEEE Press %G eng %0 Book %D 1976 %T Solar Cells %A C.E. Backus %X

The present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells

%I IEEE %C New York %P 512 %G eng %& 3 %0 Journal Article %J Solar Energy %D 1976 %T Solar thermal power system based on optical transmission %A L.L. Vant-Hull %A A.F. Hildebrandt %B Solar Energy %V 18 %P 31 - 39 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f89696498 %R DOI: 10.1016/0038-092X(76)90033-5 %0 Conference Proceedings %B 10th IEEE Photovoltaic Specialists Conference %D 1973 %T Optimum Design of Anti-reflection coating for silicon solar cells %A E.Y. Wang %A F.T.S. Yu %A V.L. Sims %A E.W. Brandhorst %A J.D. Broder %B 10th IEEE Photovoltaic Specialists Conference %P 168-171 %G eng %0 Journal Article %J Journal of Applied Physics %D 1971 %T High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing %A Aven, M. %X Electron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles. %B Journal of Applied Physics %V 42 %P 1204 %8 Jan-01-1971 %G eng %N 3 %! J. Appl. Phys. %R 10.1063/1.1660167 %0 Journal Article %J Solar Energy %D 1970 %T The measurement of solar spectral irradiance at different terrestrial elevations %A E.G. Laue %B Solar Energy %V 13 %P 43 - 50, IN1-IN4, 51-57 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a %R DOI: 10.1016/0038-092X(70)90006-X %0 Journal Article %J Solar Energy %D 1969 %T The absorption of radiation in solar stills %A P.I. Cooper %B Solar Energy %V 12 %P 333 - 346 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5 %R DOI: 10.1016/0038-092X(69)90047-4 %0 Journal Article %J IBM Journal of Research Devices %D 1964 %T Nondestructive determination of thickness and refractive index of transparent films %A W. A. Pliskin %A E. E. Conrad %X

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

%B IBM Journal of Research Devices %V 8 %P 43–51 %G eng %U http://portal.acm.org/citation.cfm?id=1662391 %0 Journal Article %J Advanced Energy Conversion %D 1963 %T Series Resistance Effects on Solar Cell Measurements %A M. Wolf %A H. Rauschenbach %B Advanced Energy Conversion %V 3 %G eng %0 Journal Article %J Journal of Applied Physics %D 1961 %T Detailed Balance Limit of Efficiency of p-n Junction Solar Cells %A William Shockley %A Hans J. Queisser %B Journal of Applied Physics %I AIP %V 32 %P 510-519 %G eng %U http://link.aip.org/link/?JAP/32/510/1 %R 10.1063/1.1736034 %0 Conference Paper %B Proceedings of the 14th Annual Power Sources Conference %D 1960 %T High efficiency silicon solar cells %A B. Dale %A H.G. Rudenberg %B Proceedings of the 14th Annual Power Sources Conference %I U.S. Army Signal Research and Development Lab %P 22 %8 1960 %G eng %0 Book Section %D 1959 %T Semiconductor Devices, Chapter 8 %A J.N. Shive %I Van Nostrand %C New Jersey %G eng %0 Journal Article %J Bell System Technical Journal %D 1958 %T Measurement of sheet resistivities with the four-point probe %A F.M. Smits %B Bell System Technical Journal %V 34 %P 711-718 %8 May 1958 %G eng %0 Journal Article %J Journal of Applied Physics %D 1954 %T A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power %A Chapin, D.M. %A Fuller, C.S. %A Pearson, G.L. %B Journal of Applied Physics %V 25 %P 676-677 %G eng %0 Journal Article %J Phys. Rev. %D 1952 %T Electron-Hole Recombination in Germanium %A Hall, R. N. %B Phys. Rev. %I American Physical Society %V 87 %P 387 %8 07/1952 %G eng %R 10.1103/PhysRev.87.387 %0 Journal Article %J Bell Systems Technical Journal %D 1952 %T Photoelectric Properties of Tonically Bombarded Silicon %A Kingsbury, E.F. %A Ohl, R.S. %B Bell Systems Technical Journal %V 31 %P 802-815 %G eng %0 Journal Article %J Physical Review %D 1952 %T Statistics of the Recombinations of Holes and Electrons %A William Shockley %A W. T. Read %X The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed. %B Physical Review %V 87 %P 835 %G eng %U http://link.aps.org/doi/10.1103/PhysRev.87.835 %R 10.1103/PhysRev.87.835 %0 Journal Article %J Trans. AIME, %D 1952 %T Zone-refining %A W. G. Pfann %B Trans. AIME, %V 194 %G eng %& 747 %0 Book %D 1950 %T Electrons and holes in semiconductors with applications to transistor electronics %A William Shockley %I van Nostrand %C New York %G eng %0 Journal Article %J U.S. Patent %D 1941 %T Light-Sensitive Electric Device %A Ohl, R.S. %B U.S. Patent %V 2 %P 402, 602 %8 05/1941 %G eng %0 Journal Article %J Journal Opt. Society of America %D 1939 %T A Thallous Sulphide Photo EMF Cell %A Nix, F.C. %A Treptwo, A.W. %B Journal Opt. Society of America %V 29 %P 457 %G eng %0 Journal Article %J Annalen der Physik %D 1934 %T Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen %A Bauer, Gerhard %B Annalen der Physik %V 411 %P 434 - 464 %8 Jan-01-1934 %G eng %N 4 %! Ann. Phys. %R 10.1002/(ISSN)1521-388910.1002/andp.v411:410.1002/andp.19344110405 %0 Journal Article %J Review of Modern Physics %D 1933 %T The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell %A Grondahl, L.O. %B Review of Modern Physics %V 5 %P 141 %G eng %0 Journal Article %J Physikalische Zeitschrift %D 1931 %T Uber eine neue Selen- Sperrschicht Photozelle %A Bergmann, L. %B Physikalische Zeitschrift %V 32 %P 286 %G eng %0 Journal Article %J C.R.A.S. %D 1923 %T Sur les rayons β secondaires produits dans un gaz par des rayons X %A P. Auger %B C.R.A.S. %V 177 %P 169-171 %G eng %0 Journal Article %J Zeitschrift für physikalische Chemie %D 1918 %T Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle %A Czochralski, J. %B Zeitschrift für physikalische Chemie %V 92 %P 219–221 %G eng %0 Journal Article %J Annalen der Physik %D 1905 %T Generation and transformation of light %A A. Einstein %K Einstein1905 %B Annalen der Physik %V 17 %8 06/1905 %G eng %& 132 %0 Journal Article %J Annalen der Physik %D 1901 %T Distribution of energy in the spectrum %A M. Planck %B Annalen der Physik %V 4 %P 553-563 %8 03/1901 %G eng %0 Journal Article %J Verhandlungen der Deutschen Physikalischen Gesellschaft %D 1900 %T Distribution of energy in the normal spectrum %A M. Planck %B Verhandlungen der Deutschen Physikalischen Gesellschaft %V 2 %P 237-245 %G eng %0 Journal Article %J American J. of Science %D 1883 %T On a New Form of Selenium Photocell %A Fritts, C.E. %B American J. of Science %V 26 %P 465 %G eng %0 Journal Article %J Proceedings of the Royal Society, London %D 1877 %T The Action of Light on Selenium %A Adams, W.G. %A Day, R.E. %B Proceedings of the Royal Society, London %V A25 %P 113 %G eng %0 Journal Article %J Ann. d. Physik %D 1874 %T On Conductance in Metal Sulphides %A Braun, F. %B Ann. d. Physik %V 153 %P 556 %G eng %0 Journal Article %J Annalen der Physick und Chemie %D 1841 %T Memoire sur les effects d´electriques produits sous l´influence des rayons solaires %A Becquerel, A.E. %B Annalen der Physick und Chemie %V 54 %P 35-42 %G eng %0 Journal Article %J Comptes Rendus de L´Academie des Sciences %D 1839 %T Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques %A Becquerel, A.E. %B Comptes Rendus de L´Academie des Sciences %V 9 %P 145-149 %G eng