TY - JOUR T1 - A review and comparison of different methods to determine the series resistance of solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2007 A1 - PYSCH, D A1 - A. Mette A1 - Stefan W. Glunz VL - 91 N1 -
KW - Pysch2007 ER - TY - JOUR T1 - Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications JF - Solid-State Electronics Y1 - 2006 A1 - M. Y. Levy A1 - Christiana B Honsberg VL - 50 KW - Levy2006 ER - TY - JOUR T1 - Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing JF - Journal of Applied Physics Y1 - 2003 A1 - Pietro P Altermatt A1 - Schenk, Andreas A1 - Geelhaar, Frank A1 - Heiser, Gernot AB - The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved. VL - 93 CP - 3 J1 - J. Appl. Phys. KW - Altermatt2003 ER - TY - CONF T1 - Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells T2 - 17th European Photovoltaic Solar Energy Conference Y1 - 2001 A1 - S. Bowden A1 - A. Rohatgi JA - 17th European Photovoltaic Solar Energy Conference CY - Munich, Germany KW - Bowden2001 ER - TY - JOUR T1 - Recent progress in MIS solar cells JF - Progress in Photovoltaics: Research and Applications Y1 - 1997 A1 - Hezel, R. VL - 5 N1 -
KW - Hezel1997 ER - TY - BOOK T1 - The Role of Photovoltaics in Reducing Greenhouse Gas Emissions Y1 - 1991 A1 - Andrew W Blakers A1 - Martin A Green A1 - T. Leo A1 - H. Outhred A1 - B. Robins PB - Australian Government Publishing Service CY - Canberra N1 -
KW - Blakers1991 ER - TY - JOUR T1 - Revised optical air mass tables and approximation formula JF - Applied Optics Y1 - 1989 A1 - Fritz Kasten A1 - Andrew T. Young PB - OSA VL - 28 UR - http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735 N1 -
KW - Kasten89 ER - TY - JOUR T1 - Recombination in highly injected silicon JF - Electron Devices, IEEE Transactions on Y1 - 1987 A1 - Sinton, R.A. A1 - Richard M Swanson VL - 34 N1 -
KW - Sinton1987 ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER - TY - JOUR T1 - Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques JF - Comptes Rendus de L´Academie des Sciences Y1 - 1839 A1 - Becquerel, A.E. VL - 9 N1 -
KW - Becquerel1839 ER -