TY - JOUR
T1 - A review and comparison of different methods to determine the series resistance of solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2007
A1 - PYSCH, D
A1 - A. Mette
A1 - Stefan W. Glunz
VL - 91
N1 -
KW - Pysch2007
ER -
TY - JOUR
T1 - Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications
JF - Solid-State Electronics
Y1 - 2006
A1 - M. Y. Levy
A1 - Christiana B Honsberg
VL - 50
KW - Levy2006
ER -
TY - JOUR
T1 - Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
JF - Journal of Applied Physics
Y1 - 2003
A1 - Pietro P Altermatt
A1 - Schenk, Andreas
A1 - Geelhaar, Frank
A1 - Heiser, Gernot
AB - The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.
VL - 93
CP - 3
J1 - J. Appl. Phys.
KW - Altermatt2003
ER -
TY - CONF
T1 - Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells
T2 - 17th European Photovoltaic Solar Energy Conference
Y1 - 2001
A1 - S. Bowden
A1 - A. Rohatgi
JA - 17th European Photovoltaic Solar Energy Conference
CY - Munich, Germany
KW - Bowden2001
ER -
TY - JOUR
T1 - Recent progress in MIS solar cells
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1997
A1 - Hezel, R.
VL - 5
N1 -
KW - Hezel1997
ER -
TY - BOOK
T1 - The Role of Photovoltaics in Reducing Greenhouse Gas Emissions
Y1 - 1991
A1 - Andrew W Blakers
A1 - Martin A Green
A1 - T. Leo
A1 - H. Outhred
A1 - B. Robins
PB - Australian Government Publishing Service
CY - Canberra
N1 -
KW - Blakers1991
ER -
TY - JOUR
T1 - Revised optical air mass tables and approximation formula
JF - Applied Optics
Y1 - 1989
A1 - Fritz Kasten
A1 - Andrew T. Young
PB - OSA
VL - 28
UR - http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735
N1 -
KW - Kasten89
ER -
TY - JOUR
T1 - Recombination in highly injected silicon
JF - Electron Devices, IEEE Transactions on
Y1 - 1987
A1 - Sinton, R.A.
A1 - Richard M Swanson
VL - 34
N1 -
KW - Sinton1987
ER -
TY - ABST
T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon
Y1 - 1981
A1 - W R Thurber
A1 - Mattis
A1 - Liu
A1 - Filliben
PB - U.S. Department of Commerce National Bureau of Standards
N1 -
KW - Thurber1981
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - boron
KW - electrical resistivity
KW - Hall effect
KW - hole density
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/2291/1
N1 -
KW - Thurber1980boron
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - density
KW - electrical resistivity
KW - electron mobility
KW - Hall effect
KW - neutron activation analysis
KW - phosphorus
KW - photometry
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/1807/1
KW - Thurber1980phos
ER -
TY - JOUR
T1 - Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques
JF - Comptes Rendus de L´Academie des Sciences
Y1 - 1839
A1 - Becquerel, A.E.
VL - 9
N1 -
KW - Becquerel1839
ER -