TY - JOUR T1 - From the Cover: Anomalously weak solar convection JF - Proceedings of the National Academy of Sciences Y1 - 2012 A1 - Hanasoge, S. M. A1 - Duvall, T. L. A1 - Sreenivasan, K. R. AB - Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. VL - 109 CP - 30 J1 - Proceedings of the National Academy of Sciences KW - Hanasoge2012 ER - TY - JOUR T1 - Improved quantitative description of Auger recombination in crystalline silicon JF - Physical Review B Y1 - 2012 A1 - Richter, Armin A1 - Stefan W. Glunz A1 - Werner, Florian A1 - Jan Schmidt A1 - Andrés Cuevas AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. VL - 86 CP - 16 J1 - Phys. Rev. B KW - Richter2012 ER - TY - JOUR T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics JF - IEEE Journal of Photovoltaics Y1 - 2012 A1 - Baker-Finch, Simeon C. A1 - McIntosh, Keith R. A1 - Terry, Mason L. VL - 2 CP - 4 J1 - IEEE J. Photovoltaics KW - 533 ER - TY - CONF T1 - OPAL 2: Rapid optical simulation of silicon solar cells T2 - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference Y1 - 2012 A1 - McIntosh, Keith R. A1 - Baker-Finch, Simeon C. AB - The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle. JA - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Austin, TX, USA SN - 978-1-4673-0064-3 KW - 532 ER - TY - CONF T1 - Gen III: Improved Performance at Lower Cost T2 - 35th IEEE Photovoltaic Specialists Conference Y1 - 2010 A1 - Peter J. Cousins A1 - David D. Smith A1 - Hsin-Chiao Luan A1 - Jane Manning A1 - Tim D. Dennis A1 - Ann Waldhaue A1 - Karen E. Wilson A1 - Gabriel Harley A1 - William P. Mulligan JA - 35th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Honolulu, Hawaii N1 -
KW - Cousins2010 ER - TY - JOUR T1 - GISS Surface Temperature Analysis Y1 - 2010 A1 - NASA UR - http://data.giss.nasa.gov/gistemp/graphs/ N1 -
KW - NASA2010 ER - TY - JOUR T1 - Solar Cell Device Physics Y1 - 2010 A1 - Stephen J. Fonash PB - Academic Press SN - 978-0-12-374774-7 UR - http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-1 N1 -

1. Introduction

2. Material Properties and Device Physics Basic to Photovoltaics

3. Structures, Materials, and Scale

4. Homojunction Solar Cells

5. Semiconductor-semiconductor Heterojunction Solar Cells

6. Surface-barrier Solar Cells

7. Dye-sensitized Solar Cells

Appendicies

KW - Fonash2009 ER - TY - JOUR T1 - Solar cell efficiency tables (version 35) JF - Progress in Photovoltaics: Research and Applications Y1 - 2010 A1 - Martin A Green A1 - Keith Emery A1 - Yoshihiro Hishikawa A1 - Wilhelm Warta KW - Conversion efficiency KW - Energy conversion KW - solar cells KW - Solar energy KW - Solar power generation AB -

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.

VL - 18 UR - http://dx.doi.org/10.1002/pip.974 N1 -

Compendex

KW - Green2010 ER - TY - Generic T1 - World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process T2 - 35 IEEE Photovoltaic Specialist Conference Y1 - 2010 A1 - Takamoto, T. A1 - Agui, T. A1 - Yoshida, A. A1 - Nakaido, K. A1 - Juso, H. A1 - Sasaki, K. A1 - Nakamura, K. A1 - Yamaguchi, H. A1 - Kodama, T. A1 - Washio, H. A1 - Imazumi, M. A1 - Takahashi, M. JA - 35 IEEE Photovoltaic Specialist Conference CY - Honolulu HI, USA N1 -
KW - Takamoto2010 ER - TY - Generic T1 - METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY T2 - 34th IEEE Photovoltaic Specialists Conference Y1 - 2009 A1 - F. Dimroth A1 - W. Guter A1 - J. Schöne A1 - E. Welser A1 - M. Steiner A1 - E. Oliva A1 - A. Wekkeli A1 - G. Siefer A1 - S.P. Philipps A1 - A.W. Bett JA - 34th IEEE Photovoltaic Specialists Conference N1 -
KW - Dimroth2009 ER - TY - JOUR T1 - The path to 25% silicon solar cell efficiency: History of silicon cell evolution JF - Progress in Photovoltaics: Research and Applications Y1 - 2009 A1 - Martin A Green VL - 17 N1 -
KW - Green2009 ER - TY - JOUR T1 - Physics of Solar Cells Y1 - 2009 A1 - Peter Würfel PB - Wiley-VCH CY - Mörlenbach, Germany SN - 978-3-527-40857-3 UR - http://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/3527404287 N1 -

1. Problems of the Energy Economy

2. Photons

3. Semiconductors

4. Conversion of Thermal Radiation into Chemical Energy

5. Conversion of Chemical Energy into Electrical Energy

6. Basic Structure of Solar Cells

7. Limitations on Energy Conversion in Solar Cells

8. Concepts for Improving the Efficiency of Solar Cells

9. Prospects for the Future

Solutions

Appendix

References

Index

KW - Wurfel2005 ER - TY - JOUR T1 - Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method JF - Progress in Photovoltaics: Research and Applications Y1 - 2008 A1 - S. P. Bremner A1 - M. Y. Levy A1 - Christiana B Honsberg AB -

We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.

VL - 16 UR - http://dx.doi.org/10.1002/pip.799 KW - Bremner2008 ER - TY - JOUR T1 - Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients JF - Solar Energy Materials and Solar Cells Y1 - 2008 A1 - Martin A Green KW - Absorption coefficient KW - optical properties KW - SILICON SOLAR CELLS AB - An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range. VL - 92 UR - http://www.sciencedirect.com/science/article/pii/S0927024808002158 KW - green_self-consistent_2008 ER - TY - JOUR T1 - Applied Photovoltaics Y1 - 2007 A1 - Wenham, S.R. A1 - Martin A Green A1 - Watt, M. E. A1 - R. Corkish AB -
PB - Earthscan CY - London, UK SN - 1-84407-401-3 UR - http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1 N1 -

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

KW - Wenham2007 ER - TY - Generic T1 - Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells T2 - 22nd European Photovoltaic Specialist Conference Y1 - 2007 A1 - De Ceuster, D. A1 - P. Cousins A1 - D. Rose A1 - M. Cudzinovic A1 - W. Mulligan JA - 22nd European Photovoltaic Specialist Conference N1 -
KW - DeCeuster2007 ER - TY - JOUR T1 - A review and comparison of different methods to determine the series resistance of solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2007 A1 - PYSCH, D A1 - A. Mette A1 - Stefan W. Glunz VL - 91 N1 -
KW - Pysch2007 ER - TY - JOUR T1 - Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste JF - Progress in Photovoltaics: Research and Applications Y1 - 2007 A1 - A. Mette A1 - et al VL - 15 N1 -
KW - Mette2007 ER - TY - JOUR T1 - Global temperature change JF - Proceedings of the National Academy of Sciences Y1 - 2006 A1 - Hansen, J. VL - 103 N1 -
KW - Hansen2006 ER - TY - CONF T1 - Low Light Performance of Mono-Crystalline Silicon Solar Cells T2 - 4th World Conference on Photovoltaic Energy Conference Y1 - 2006 A1 - Gabriela Bunea A1 - Karen Wilson A1 - Yevgeny Meydbray A1 - Matthew Campbell A1 - Denis De Ceuster JA - 4th World Conference on Photovoltaic Energy Conference CY - Waikoloa, HI UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1 KW - bunea_low_2006 ER - TY - JOUR T1 - Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications JF - Solid-State Electronics Y1 - 2006 A1 - M. Y. Levy A1 - Christiana B Honsberg VL - 50 KW - Levy2006 ER - TY - BOOK T1 - Semiconductor material and device characterization Y1 - 2006 A1 - Dieter Schroder PB - IEEE Press; Wiley CY - Piscataway NJ; Hoboken N.J. SN - 9780471739067 KW - Schroder2006 ER - TY - Generic T1 - Approaching the 29% limit efficiency of silicon solar cells T2 - Thirty-First IEEE Photovoltaic Specialists Conference Y1 - 2005 A1 - Richard M Swanson JA - Thirty-First IEEE Photovoltaic Specialists Conference PB - 01/2005 CY - Lake buena Vista, FL, USA N1 -
KW - Swanson2005 ER - TY - JOUR T1 - Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon JF - Progress in Photovoltaics: Research and Applications Y1 - 2005 A1 - Bothe, Karsten A1 - Sinton, Ron A1 - Jan Schmidt VL - 13 N1 -
KW - Bothe2005 ER - TY - JOUR T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence JF - Applied Physics Letters Y1 - 2005 A1 - Takashi Fuyuki A1 - Hayato Kondo A1 - Tsutomu Yamazaki A1 - Yu Takahashi A1 - Yukiharu Uraoka KW - carrier lifetime KW - electroluminescence KW - elemental semiconductors KW - MINORITY CARRIERS KW - SILICON KW - solar cells PB - AIP VL - 86 UR - http://link.aip.org/link/?APL/86/262108/1 KW - Fuyuki2005 ER - TY - JOUR T1 - Photovoltaic Solar Energy Generation Y1 - 2005 A1 - Adolf Goetzberger A1 - Volker Uwe Hoffmann PB - Springer CY - Berlin, Germany SN - 3-540-23676-7 UR - http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books&ie=UTF8&qid=1279649098&sr=1-2 N1 -

1. What is Photovoltaics?

2. Physics of Solar Cells

3. Silicon Solar Cell Material and Technology

4. Crystalline Thin-Film Silicon

5. Other Materials, New Concepts

6. Solar Cells and Solar Modules

7. PV Systems

8. PV Systems Installation Possibilities

9. Environmental Impacts by PV Systems

10. Efficinecy and Performance of PV Systems

11. PV Markets Support Measures and Costs

12. The Future PV

13. Other (Perhaps Competing) CO2-Free Energy Sources

14. Popular Killing Arguments Against PV

References

Index

KW - Goetzberger2005 ER - TY - JOUR T1 - Electronic color charts for dielectric films on silicon JF - Optics Express Y1 - 2004 A1 - Justin Henrie A1 - Spencer Kellis A1 - Stephen Schultz A1 - Aaron Hawkins KW - Color KW - measurement KW - optical properties KW - Thin films AB -

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

VL - 12 UR - http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464 N1 -
KW - Henrie2004 ER - TY - Generic T1 - Dependence of aluminium alloying on solar cell processing conditions T2 - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes Y1 - 2003 A1 - Christiana B Honsberg A1 - Anwar, K.K. A1 - Mehrvarz, H.R. A1 - Cotter, J.E. A1 - Wenham, S.R. JA - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes N1 -
KW - Honsberg2003 ER - TY - JOUR T1 - Handbook of Photovoltaic Science and Engineering Y1 - 2003 A1 - Luque, A. A1 - Hegedus, S. PB - John Wiley & Sons Ltd. CY - Chichester, England SN - 0-471-49196-9 UR - http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7 N1 -

1. Status, Trends, Challenges and the Bright Future of Solar Electricity from Photovoltaics. 

2. Motivation for Photovoltaic Application and Development

3. The Physics of the Solar Cell

4. Theoretical Limits of Photovoltaic Conversion

5. Solar Grade Silicon Feedstock 

6. Bulk Crystal Growth and Wafering for PV

7. Crystalline Silicon Solar Cells and Modules 

8. Thin-film Silicon Solar Cells 

9. High-efficiency III-V Multijunction Solar Cells

10. Space Solar Cells and Arrays

11. Photovoltaic Concentrators 

12. Amorphous Silicon-based Solar Cells 

13. Cu(InGa)Se2 Solar Cells

14. Cadmium Telluride Solar Cells

15. Dye-sensitized Solar Cells

16. Measurement and Characterization of Solar Cells and Modules

17. Photovoltaic Systems

18. Electrochemical Storage for Photovoltaics

19. Power Conditioning for Photovoltaic Power Systems

20. Energy Collected and Delivered by PV Modules

21. Economic Analysis and Environmental Aspects of Photovoltaic Systems

22. PV in Architecture

23. Photovoltaics and Development

24. Financing PV Growth 

Index

KW - Luque2003 ER - TY - JOUR T1 - The Physics of Solar Cells Y1 - 2003 A1 - Jenny Nelson AB -
PB - Imperial College Press CY - London, UK SN - 1-86094-340-3 UR - http://www.amazon.com/Physics-Solar-Properties-Semiconductor-Materials/dp/1860943497 N1 -

1. Introduction

2. Photons In, Electrons Out: Basic Principles of PV

3. Electrons and Holes and Semiconductors

4. Generation and Recombination

5. Junctions

6. Analysis of the p-n Junction

7. Monocrystalline Solar Cells

8. Thin Film Solar Cells

9. Managing Light

10. Over the Limit: Strategies for High Efficiency

Solutions

Index

KW - Nelson2003 ER - TY - JOUR T1 - Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing JF - Journal of Applied Physics Y1 - 2003 A1 - Pietro P Altermatt A1 - Schenk, Andreas A1 - Geelhaar, Frank A1 - Heiser, Gernot AB - The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved. VL - 93 CP - 3 J1 - J. Appl. Phys. KW - Altermatt2003 ER - TY - JOUR T1 - Solar Position Algorithm for Solar Radiation Applications Y1 - 2003 A1 - Reda, I A1 - Andreas, A N1 -
KW - Reda2003 ER - TY - JOUR T1 - General parameterization of Auger recombination in crystalline silicon JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - SILICON PB - AIP VL - 91 UR - http://link.aip.org/link/?JAP/91/2473/1 KW - Kerr2002 ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas A1 - Ronald A. Sinton AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. VL - 91 N1 -
KW - Kerr2002 ER - TY - JOUR T1 - 24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Zhao, J. A1 - Aihua Wang A1 - Martin A Green VL - 66 N1 -
KW - Zhao2001 ER - TY - JOUR T1 - Computing the solar vector JF - Solar Energy Y1 - 2001 A1 - Manuel Blanco-Muriel A1 - Diego C. Alarcón-Padilla A1 - Teodoro López-Moratalla A1 - MartÍn Lara-Coira KW - Solar tracking VL - 70 UR - http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993 N1 -
KW - BlancoMuriel2001 ER - TY - JOUR T1 - Degradation of carrier lifetime in Cz silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Stefan W. Glunz A1 - S. Rein A1 - W. Warta A1 - J. Knobloch A1 - W. Wettling KW - Defects VL - 65 UR - http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f N1 -
KW - Glunz2001 ER - TY - JOUR T1 - High performance light trapping textures for monocrystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Campbell, Patrick A1 - Martin A Green AB - Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications. VL - 65 CP - 1-4 J1 - Solar Energy Materials and Solar Cells KW - Campbell2001 ER - TY - JOUR T1 - Improvements in numerical modelling of highly injected crystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Pietro P Altermatt A1 - Sinton, R.A. A1 - G. Heiser AB -

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

VL - 65 UR - http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1 KW - Altermatt2001 ER - TY - Generic T1 - Natural Sunlight Calibration of Silicon Solar Cells. T2 - 17th European Photovoltaic Solar Energy Conference Y1 - 2001 A1 - W. Keogh A1 - Andrew W Blakers JA - 17th European Photovoltaic Solar Energy Conference CY - Munich, Germany N1 -
KW - Keogh2001 ER - TY - Generic T1 - A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits T2 - 17th European Photovoltaic Solar Energy Conference Y1 - 2001 A1 - Christiana B Honsberg A1 - R. Corkish A1 - S. P. Bremner JA - 17th European Photovoltaic Solar Energy Conference N1 -
KW - Honsberg2001 ER - TY - CONF T1 - Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells T2 - 17th European Photovoltaic Solar Energy Conference Y1 - 2001 A1 - S. Bowden A1 - A. Rohatgi JA - 17th European Photovoltaic Solar Energy Conference CY - Munich, Germany KW - Bowden2001 ER - TY - JOUR T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon JF - Journal of Applied Physics Y1 - 2001 A1 - Daniel Macdonald A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - CARRIER DENSITY KW - carrier lifetime KW - electron traps KW - electron-hole recombination KW - elemental semiconductors KW - hole traps KW - photoconductivity KW - SILICON KW - solar cells PB - AIP VL - 89 UR - http://link.aip.org/link/?JAP/89/2772/1 KW - Macdonald2001 ER - TY - THES T1 - Aluminium Back Surface Field in Buried Contact Solar Cells Y1 - 2000 A1 - Anwar, K.K. PB - University of New South Wales VL - Bachelor of Engineering N1 -
KW - Anwar2000 ER - TY - JOUR T1 - Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities JF - Journal of Applied Physics Y1 - 2000 A1 - Jan Schmidt A1 - Mark J Kerr A1 - Pietro P Altermatt KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - photoconductivity KW - SILICON PB - AIP VL - 88 UR - http://link.aip.org/link/?JAP/88/1494/1 KW - Schmidt2000 ER - TY - Generic T1 - The Influence of Edge Recombination on a Solar Cell’s IV Curve T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - McIntosh, K. R. A1 - Christiana B Honsberg JA - 16th European Photovoltaic Solar Energy Conference N1 -
KW - McIntosh2000 ER - TY - Generic T1 - Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - A.S.H. van der Heide A1 - et al JA - 16th European Photovoltaic Solar Energy Conference CY - Glasgow (United Kingdom) N1 -
KW - vanderHeide2000 ER - TY - Generic T1 - Outdoor measurement of 28% efficiency for a mini-concentrator module T2 - National Center for Photovoltaics Program Review Meeting Y1 - 2000 A1 - O’Neil, M.J. A1 - McDanal, A.J. JA - National Center for Photovoltaics Program Review Meeting CY - Denver, USA N1 -
KW - ONeil2000 ER - TY - CONF T1 - A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - Sinton, R.A. A1 - Andrés Cuevas JA - 16th European Photovoltaic Solar Energy Conference CY - Glasgow, Scotland KW - Sinton2000 ER - TY - Generic T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - 16h European Solar Energy Conference N1 -
KW - Corkish2000 ER - TY - CONF T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - Proceedings of the 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - Proceedings of the 16h European Solar Energy Conference PB - James and James CY - Glasgow UK SN - 9781902916187 N1 -
KW - Corkish2000 ER - TY - JOUR T1 - Solar Electricity Y1 - 2000 A1 - Tomas Markvart PB - John Wiley & Sons CY - Chichester, England SN - 0-471-98853-7 UR - http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-1 N1 -

1. Electricity from the Sun

2. Solar Radiation

3. Solar Cells

4. Photovoltaic System Engineering

5. Applications

6. Environmental Impacts of Photovoltaics

7. Advanced and Special Topics

Index

KW - Markvart2000 ER - TY - BOOK T1 - Solid State Electronic Devices Y1 - 2000 A1 - Ben G. Streetman PB - Prentice Hall N1 -
KW - Streetman2001 ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors JF - Journal of Applied Physics Y1 - 1999 A1 - Henning Nagel A1 - Christopher Berge A1 - Armin G Aberle KW - carrier lifetime KW - photoconductivity PB - AIP VL - 86 UR - http://link.aip.org/link/?JAP/86/6218/1 KW - Nagel1999 ER - TY - Generic T1 - 19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion Y1 - 1998 A1 - Zhao, J. A1 - Wang, A. A1 - Martin A Green JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion CY - Vienna, Austria N1 -
KW - Zhao1998 ER - TY - JOUR T1 - 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells JF - Applied Physics Letters Y1 - 1998 A1 - Jianhua Zhao A1 - Aihua Wang A1 - Martin A Green A1 - Francesca Ferrazza KW - elemental semiconductors KW - SILICON KW - solar cells KW - surface texture PB - AIP VL - 73 UR - http://link.aip.org/link/?APL/73/1991/1 KW - Zhao1991 ER - TY - Generic T1 - Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion Y1 - 1998 A1 - Ruby, D. S. A1 - Yang, P. A1 - Zaidi, S. A1 - Brueck, S. A1 - Roy, M. A1 - Narayanan, S. JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion CY - Vienna, Austria N1 -
KW - Ruby1998 ER - TY - JOUR T1 - 20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race JF - Progress in Photovoltaics: Research and Applications Y1 - 1997 A1 - Zhao, J. A1 - Wang, A. A1 - Yun, F. A1 - Zhang, G. A1 - Roche, D.M. A1 - Wenham, S.R. A1 - Martin A Green VL - 5 N1 -
KW - Zhao1997 ER - TY - Generic T1 - Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Einhaus, R. A1 - Vazsonyi, E. A1 - Szlufcik, J. A1 - Nijs, J. A1 - Mertens, R. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Einhaus1997 ER - TY - Generic T1 - Low-cost industrial technologies of crystalline silicon solar cells T2 - Proceedings-of-the-IEEE Y1 - 1997 A1 - Szlufcik, J. A1 - Sivoththaman, S. A1 - Nlis, J.F. A1 - Mertens, R.P. A1 - Van-Overstraeten, R. JA - Proceedings-of-the-IEEE VL - 85 N1 -
KW - Szlufcik1997 ER - TY - JOUR T1 - Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications JF - physica status solidi (a) Y1 - 1997 A1 - Chandramohan, R. A1 - Sanjeeviraja, C. A1 - Mahalingam, T. VL - 163 CP - 2 J1 - phys. stat. sol. (a) KW - Chandramohan1997 ER - TY - JOUR T1 - Recent progress in MIS solar cells JF - Progress in Photovoltaics: Research and Applications Y1 - 1997 A1 - Hezel, R. VL - 5 N1 -
KW - Hezel1997 ER - TY - Generic T1 - A simple processing sequence for selective emitters T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Horzel, J. A1 - Szlufcik, J. A1 - Nijs, J. A1 - Mertens, R. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Horzel1997 ER - TY - Generic T1 - Surface texturing using reactive ion etching for multicrystalline silicon solar cells T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Fukui, K. A1 - Inomata, Y. A1 - Shirasawa, K. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Fukui1997 ER - TY - JOUR T1 - Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data JF - Applied Physics Letters Y1 - 1996 A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - carrier lifetime KW - CV CHARACTERISTIC KW - MINORITY CARRIERS KW - photoconductivity KW - SEMICONDUCTOR MATERIALS KW - SILICON KW - STEADY – STATE CONDITIONS PB - AIP VL - 69 UR - http://link.aip.org/link/?APL/69/2510/1 KW - Sinton1996 ER - TY - JOUR T1 - Texturing of polycrystalline silicon JF - Solar Energy Materials and Solar Cells Y1 - 1996 A1 - M. J. Stocks A1 - A. J. Carr A1 - Andrew W Blakers VL - 40 UR - http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541 KW - Stocks1996 ER - TY - JOUR T1 - Optical properties of intrinsic silicon at 300 K JF - Progress in Photovoltaics: Research and Applications Y1 - 1995 A1 - Martin A Green A1 - Keevers, Mark J. VL - 3 N1 -
KW - Green1995 ER - TY - JOUR T1 - On some thermodynamic aspects of photovoltaic solar energy conversion JF - Solar Energy Materials and Solar Cells Y1 - 1995 A1 - Baruch, P. A1 - De Vos, A. A1 - Landsberg, P. T. A1 - J.E. Parrott VL - 36 KW - Baruch1995 ER - TY - JOUR T1 - Sun’s Role in Warming Is Discounted JF - Science Y1 - 1995 A1 - Kerr, R. A. VL - 268 N1 -
KW - Kerr1995 ER - TY - JOUR T1 - 7000 High Efficiency Cells for a Dream JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Verlinden, P.J. A1 - Richard M Swanson A1 - Crane, R.A. VL - 2 N1 -
KW - Verlinden1994 ER - TY - JOUR T1 - Attaining Thirty-Year Photovoltaic System Lifetime JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Durand, S. N1 -
KW - Durand1994 ER - TY - JOUR T1 - Buried contact concentrator solar cells JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Jordan, D. A1 - Nagle, J.P. VL - 2 N1 -
KW - Jordan1994 ER - TY - JOUR T1 - Defining terms for crystalline silicon solar cells JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Basore, P.A. VL - 2 N1 -
KW - Basore1994 ER - TY - JOUR T1 - Departures from the principle of superposition in silicon solar cells JF - Journal of Applied Physics Y1 - 1994 A1 - Robinson, S. J. A1 - Armin G Aberle A1 - Martin A Green VL - 76 N1 -
KW - Robinson1994 ER - TY - JOUR T1 - Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors JF - Journal of Applied Physics Y1 - 1994 A1 - A. B. Sproul KW - ANALYTICAL SOLUTION KW - carrier lifetime KW - DECAY KW - MINORITY CARRIERS KW - RECOMBINATION KW - SEMICONDUCTOR MATERIALS KW - SURFACES PB - AIP VL - 76 UR - http://link.aip.org/link/?JAP/76/2851/1 KW - Sproul1994 ER - TY - BOOK T1 - {VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition Y1 - 1994 A1 - Ghandhi, Sorab K. PB - Wiley-Interscience SN - 0471580058 KW - Ghandi1994 ER - TY - JOUR T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K JF - Journal of Applied Physics Y1 - 1993 A1 - Misiakos, Konstantinos A1 - Tsamakis, Dimitris AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. VL - 74 CP - 5 J1 - J. Appl. Phys. KW - Misiakos93 ER - TY - JOUR T1 - Choice of an equivalent black body solar temperature JF - Solar Energy Y1 - 1993 A1 - J.E. Parrott VL - 51 UR - http://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb6 N1 -
KW - Parrott1993 ER - TY - CONF T1 - A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference Y1 - 1993 A1 - Armin G Aberle A1 - Wenham, S.R. A1 - Martin A Green JA - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference CY - Louisville, KY KW - Aberle1993 ER - TY - JOUR T1 - A simple and effective light trapping technique for polycrystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 1992 A1 - G. Willeke A1 - H. Nussbaumer A1 - H. Bender A1 - E. Bucher VL - 26 UR - http://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c51 KW - Willeke1992 ER - TY - BOOK T1 - Solar Cells - Operating Principles, Technology and System Application Y1 - 1992 A1 - Martin A Green PB - University of NSW CY - Kensington, Australia N1 -
KW - Green1992 ER - TY - Generic T1 - Buried contact concentrator solar cells T2 - Twenty Second IEEE Photovoltaic Specialists Conference Y1 - 1991 A1 - Wohlgemuth, J.H. A1 - Narayanan, S. JA - Twenty Second IEEE Photovoltaic Specialists Conference VL - 1 N1 -
KW - Wohlgemuth1991 ER - TY - Generic T1 - Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates T2 - 22nd IEEE Photovoltaic Specialists Conference Y1 - 1991 A1 - Wenger, H.J. A1 - Schaefer, J. A1 - Rosenthal, A. A1 - Hammond, B. A1 - Schlueter, L. JA - 22nd IEEE Photovoltaic Specialists Conference CY - Las Vegas, USA N1 -
KW - Wenger1991 ER - TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K JF - Journal of Applied Physics Y1 - 1991 A1 - A. B. Sproul A1 - Martin A Green KW - CARRIER DENSITY KW - IV CHARACTERISTIC KW - JUNCTION DIODES KW - MEDIUM TEMPERATURE KW - MINORITY CARRIERS KW - SANDIA LABORATORIES KW - SILICON KW - SILICON DIODES KW - TEMPERATURE DEPENDENCE PB - AIP VL - 70 UR - http://link.aip.org/link/?JAP/70/846/1 N1 -
KW - Sproul1991 ER - TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K JF - Journal of Applied Physics Y1 - 1991 A1 - A. B. Sproul A1 - Martin A Green VL - 70 N1 -
KW - Sproul1991 ER - TY - Generic T1 - Improvements in Silicon Solar Cell Performance T2 - 22nd IEEE PV Specialists Conference Y1 - 1991 A1 - Zhao, J. A1 - Wang A. A1 - Dai, X. A1 - Martin A Green A1 - Wenham, S.R. JA - 22nd IEEE PV Specialists Conference N1 -
KW - Zhao1991 ER - TY - BOOK T1 - The Role of Photovoltaics in Reducing Greenhouse Gas Emissions Y1 - 1991 A1 - Andrew W Blakers A1 - Martin A Green A1 - T. Leo A1 - H. Outhred A1 - B. Robins PB - Australian Government Publishing Service CY - Canberra N1 -
KW - Blakers1991 ER - TY - Generic T1 - A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources T2 - 22nd IEEE PV Specialists Conference Y1 - 1991 A1 - King, D. A1 - Hansen, B. JA - 22nd IEEE PV Specialists Conference N1 -
KW - King1991 ER - TY - Generic T1 - 18% efficient polycrystalline silicon solar cells T2 - Twenty First IEEE Photovoltaic Specialists Conference Y1 - 1990 A1 - Narayanan, S. A1 - Zolper, J. A1 - Yun, F. A1 - Wenham, S.R. A1 - A. B. Sproul A1 - Chong,C.M. A1 - Martin A Green JA - Twenty First IEEE Photovoltaic Specialists Conference VL - 1 N1 -
KW - Narayanan1990 ER - TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration at 300 K JF - Applied Physics Letters Y1 - 1990 A1 - A. B. Sproul A1 - Martin A Green A1 - Zhao, J. VL - 57 N1 -
KW - Sproul1990 ER - TY - JOUR T1 - Minority-carrier transport parameters in n-type silicon JF - IEEE Transactions on Electron Devices Y1 - 1990 A1 - Wang, C.H. A1 - Misiakos, K. A1 - Neugroschel, A. VL - 37 N1 -
KW - Wang1990 ER - TY - JOUR T1 - Modeling daylight availability and irradiance components from direct and global irradiance JF - Solar Energy Y1 - 1990 A1 - Richard Perez A1 - Pierre Ineichen A1 - Robert Seals A1 - Joseph Michalsky A1 - Ronald Stewart VL - 44 UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e N1 -
KW - Perez1990 ER - TY - JOUR T1 - Modeling daylight availability and irradiance components from direct and global irradiance JF - Solar Energy Y1 - 1990 A1 - Richard Perez A1 - Pierre Ineichen A1 - Robert Seals A1 - Joseph Michalsky A1 - Ronald Stewart AB -

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

VL - 44 UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e N1 -
KW - Perez1990 ER - TY - JOUR T1 - Numerical modeling of textured silicon solar cells using PC-1D JF - Electron Devices, IEEE Transactions on Y1 - 1990 A1 - Basore, P.A. KW - elemental semiconductors KW - finite element analysis KW - finite-element program KW - front-surface recombination KW - heavy doping KW - high-level injection KW - internal performance KW - light trapping KW - microcomputer applications KW - modeling semiconductor devices KW - multidimensional effects KW - nonplanar structures KW - numerical models KW - oblique photon path angles KW - PC-1D KW - PC-1D Version 2 KW - personal computers KW - semiconductor device models KW - semiconductors KW - Si KW - SILICON KW - solar cells KW - spectral quantum efficiency data KW - textured solar cells KW - transients AB - PC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells VL - 37 KW - basore1990 ER - TY - Generic T1 - Photovoltaics: Coming of Age T2 - 21st IEEE Photovoltaic Specialists Conference Y1 - 1990 A1 - Martin A Green AB - The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential. JA - 21st IEEE Photovoltaic Specialists Conference CY - Orlando, USA UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582 N1 -
KW - Green1990 ER - TY - JOUR T1 - 16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell JF - Applied Physics Letters Y1 - 1989 A1 - John C. Zolper A1 - Srinivasamohan Narayanan A1 - Stuart R. Wenham A1 - Martin A Green VL - 55 UR - http://apl.aip.org/applab/v55/i22/p2363_s1 KW - Zolper1989 ER - TY - JOUR T1 - Revised optical air mass tables and approximation formula JF - Applied Optics Y1 - 1989 A1 - Fritz Kasten A1 - Andrew T. Young PB - OSA VL - 28 UR - http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735 N1 -
KW - Kasten89 ER - TY - ABST T1 - Buried contact solar cell Y1 - 1988 A1 - Stuart R. Wenham A1 - Martin A Green UR - http://www.freepatentsonline.com/4726850.html N1 -
KW - Wenham1988 ER - TY - Generic T1 - SOLAR SIMULATION - PROBLEMS AND SOLUTIONS T2 - 20th IEEE PV Specialists Conference Y1 - 1988 A1 - Emery, K. A1 - Myers, D. A1 - Rummel, S. JA - 20th IEEE PV Specialists Conference N1 -
KW - Emery1988 ER - TY - JOUR T1 - Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity JF - Journal of Applied Physics Y1 - 1987 A1 - Keung L. Luke A1 - Li-Jen Cheng KW - carrier lifetime KW - LASERRADIATION HEATING KW - MINORITY CARRIERS KW - RECOMBINATION KW - SILICON KW - SILICON SOLAR CELLS KW - SURFACE PROPERTIES KW - THEORETICAL DATA KW - VELOCITY KW - WAFERS PB - AIP VL - 61 UR - http://link.aip.org/link/?JAP/61/2282/1 KW - Luke1987 ER - TY - JOUR T1 - Light trapping properties of pyramidally textured surfaces JF - Journal of Applied Physics Y1 - 1987 A1 - Campbell, Patrick A1 - Martin A Green VL - 62 CP - 1 J1 - J. Appl. Phys. KW - Campbell1987 ER - TY - JOUR T1 - Recombination in highly injected silicon JF - Electron Devices, IEEE Transactions on Y1 - 1987 A1 - Sinton, R.A. A1 - Richard M Swanson VL - 34 N1 -
KW - Sinton1987 ER - TY - JOUR T1 - Flat-Plate Solar Array Project Final Report Y1 - 1986 A1 - Ross, R.G. Jnr. A1 - Smokler, M.I. PB - Jet Propulsion Laboratory N1 -
KW - Ross1986 ER - TY - JOUR T1 - Calculation of surface generation and recombination velocities at the Si-SiO2 interface JF - Journal of Applied Physics Y1 - 1985 A1 - Eades, Wendell D. A1 - Richard M Swanson VL - 58 N1 -
KW - Eades1985 ER - TY - BOOK T1 - Perception Y1 - 1985 A1 - Sekuler, R. A1 - Blake, R. PB - Alfred A. Knopf Inc CY - New York N1 -
KW - Sekuler1985 ER - TY - BOOK T1 - QED : The Strange Theory of Light and Matter T2 - Princeton University Press, Princeton NJ Y1 - 1985 A1 - Feynman, R. P. JA - Princeton University Press, Princeton NJ N1 -
KW - Feynman1985 ER - TY - JOUR T1 - Limiting Efficiency of Silicon Solar Cells JF - IEEE TRANSACTIONS ON ELECTRON DEVICES Y1 - 1984 A1 - T. Tiedje A1 - E Yablonovich A1 - G.D. Cody A1 - B.G. Brooks VL - ED-31 N1 -
KW - Tiedje1984 ER - TY - BOOK T1 - Photovoltaics for Residential Applications Y1 - 1984 A1 - SERI PB - Solar Energy Research Institute CY - Golden, Colorado N1 -
KW - seri1984 ER - TY - JOUR T1 - Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon JF - IEEE Transactions on Electron Devices Y1 - 1983 A1 - G. Masetti A1 - M. Severi A1 - S. Solmi KW - arsenic KW - boron KW - CARRIER DENSITY KW - carrier mobility KW - digital simulation KW - elemental semiconductors KW - heavily doped semiconductors KW - phosphorus KW - SILICON AB -

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

VL - ED-30 N1 -

Copyright 1983, {IEE}

KW - Masetti1983 ER - TY - JOUR T1 - On Phosphorus Diffusion in Silicon JF - On Phosphorus Diffusion in Silicon Y1 - 1983 A1 - S.M. Hu A1 - P. Fahey A1 - P. Sutton VL - 54 N1 -
KW - Hu1983-2 ER - TY - BOOK T1 - Solar Cells: From Basic to Advanced Systems Y1 - 1983 A1 - Hu, C A1 - White, R.M. PB - McGraw-Hill CY - New York N1 -
KW - Hu1983 ER - TY - CHAP T1 - Voltaic Cell, Chapter XIV Y1 - 1983 A1 - P. Benjamin PB - Wiley CY - New York N1 -
KW - Benjamin1983 ER - TY - JOUR T1 - Accuracy of Analytical Expressions for Solar Cell Fill Factors JF - Solar Cells Y1 - 1982 A1 - Martin A Green VL - 7 N1 -
KW - Green1982 ER - TY - JOUR T1 - Intensity Enhancement in Textured Optical Sheets for Solar Cells JF - IEEE Transactions on Electron Devices Y1 - 1982 A1 - E Yablonovich A1 - G.D. Cody VL - ED-29 N1 -
KW - Yablonovich1982 ER - TY - JOUR T1 - Solar Cells: Operating Principles, Technology and System Applications Y1 - 1982 A1 - Martin A Green AB -
PB - Prentice-Hall SN - 0-85823-580-3 N1 -

1. Solar Cells and Sunlight

2. Review of Semiconductor Properties

3. Generation, Recombination and the Basic Equation of Device Physics

4. p-n Junction Diodes

5. Efficiency Limits, Losses and Measurement

6. Standard Silicon Solar Cell Technology

7. Improved Silicon Cell Technology

8. Design of Silicon Solar Cells

9. Other Device Structures

10. Other Semiconductor Materials

11.Concentrating Systems

12. Photovoltaic Systems: Components and Applications

13. Design of Stand-alone Systems

14. Residential and Centralised Photovoltaic Power Systems

Appendix A: Physical Constants

Appendix B: Selected Properties of Silicon

Appendix C: List of Symbols

KW - Green1982book ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Solar cell fill factors: General graph and empirical expressions JF - Solid-State Electronics Y1 - 1981 A1 - Martin A Green VL - 24 N1 -
KW - Green1981 ER - TY - Generic T1 - Flat-Plate Photovoltaic Array Design Optimization T2 - 14th IEEE Photovoltaic Specialists Conference Y1 - 1980 A1 - Ross, R.G. JA - 14th IEEE Photovoltaic Specialists Conference CY - San Diego, CA N1 -
KW - Ross1980 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER - TY - CHAP T1 - Solar Energy Utilisation Y1 - 1980 A1 - G.D. Rai PB - Khanna Publishers N1 -
KW - Rai1980 ER - TY - JOUR T1 - Application of the superposition principle to solar-cell analysis JF - IEEE Transactions on Electron Devices Y1 - 1979 A1 - F.A. Lindholm A1 - Fossum, J.G. A1 - E.L. Burgess AB - The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level). VL - 26 KW - Lindholm1979 ER - TY - JOUR T1 - Solar Power for Telecommunications JF - The Telecommunication Journal of Australia Y1 - 1979 A1 - Mack, M. VL - 29 N1 -
KW - Mack1979 ER - TY - ABST T1 - United States Patent: 4137123 - Texture etching of silicon: method Y1 - 1979 A1 - William L. Bailey A1 - Michael G. Coleman A1 - Cynthia B. Harris A1 - Israel A. Lesk AB -

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 KW - Bailey1979 ER - TY - Generic T1 - Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations T2 - 13th IEEE Photovoltaic Specialists Conference Y1 - 1978 A1 - H.B. Serreze JA - 13th IEEE Photovoltaic Specialists Conference CY - Washington, D.C., USA N1 -
KW - Serreze1978 ER - TY - JOUR T1 - Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination JF - IEEE Transactions on Electron Devices Y1 - 1977 A1 - Card, H.C. A1 - Yang, E.S. VL - ED-24 N1 -
KW - Card1977 ER - TY - JOUR T1 - Physical operation of back-surface-field silicon solar cells JF - IEEE Transactions on Electron Devices Y1 - 1977 A1 - Fossum, J.G. AB -

Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.

VL - 24 KW - Fossum1977 ER - TY - BOOK T1 - Applied Solar Energy Y1 - 1976 A1 - Meinel, A.B. A1 - Meinel, M.P. PB - Addison Wesley Publishing Co. N1 -
KW - Meinel1976 ER - TY - Generic T1 - Historical Development of Solar Cells Y1 - 1976 A1 - M. Wolf PB - IEEE Press N1 -
KW - Wolf1976 ER - TY - BOOK T1 - Solar Cells Y1 - 1976 A1 - C.E. Backus AB -

The present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells

PB - IEEE CY - New York N1 -
KW - Backus1976 ER - TY - JOUR T1 - Solar thermal power system based on optical transmission JF - Solar Energy Y1 - 1976 A1 - L.L. Vant-Hull A1 - A.F. Hildebrandt VL - 18 UR - http://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f89696498 N1 -
KW - VantHull1976 ER - TY - Generic T1 - Optimum Design of Anti-reflection coating for silicon solar cells T2 - 10th IEEE Photovoltaic Specialists Conference Y1 - 1973 A1 - E.Y. Wang A1 - F.T.S. Yu A1 - V.L. Sims A1 - E.W. Brandhorst A1 - J.D. Broder JA - 10th IEEE Photovoltaic Specialists Conference N1 -
KW - Wang1973 ER - TY - JOUR T1 - High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing JF - Journal of Applied Physics Y1 - 1971 A1 - Aven, M. AB - Electron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles. VL - 42 CP - 3 J1 - J. Appl. Phys. KW - 531 ER - TY - JOUR T1 - The measurement of solar spectral irradiance at different terrestrial elevations JF - Solar Energy Y1 - 1970 A1 - E.G. Laue VL - 13 UR - http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a N1 -
KW - Laue1970 ER - TY - JOUR T1 - The absorption of radiation in solar stills JF - Solar Energy Y1 - 1969 A1 - P.I. Cooper VL - 12 UR - http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5 N1 -
KW - Cooper1969 ER - TY - JOUR T1 - Nondestructive determination of thickness and refractive index of transparent films JF - IBM Journal of Research Devices Y1 - 1964 A1 - W. A. Pliskin A1 - E. E. Conrad AB -

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

VL - 8 UR - http://portal.acm.org/citation.cfm?id=1662391 N1 -
KW - Pliskin1964 ER - TY - JOUR T1 - Series Resistance Effects on Solar Cell Measurements JF - Advanced Energy Conversion Y1 - 1963 A1 - M. Wolf A1 - H. Rauschenbach VL - 3 KW - Wolf1963 ER - TY - JOUR T1 - Detailed Balance Limit of Efficiency of p-n Junction Solar Cells JF - Journal of Applied Physics Y1 - 1961 A1 - William Shockley A1 - Hans J. Queisser PB - AIP VL - 32 UR - http://link.aip.org/link/?JAP/32/510/1 KW - Shockley1961 ER - TY - CONF T1 - High efficiency silicon solar cells T2 - Proceedings of the 14th Annual Power Sources Conference Y1 - 1960 A1 - B. Dale A1 - H.G. Rudenberg JA - Proceedings of the 14th Annual Power Sources Conference PB - U.S. Army Signal Research and Development Lab N1 -
KW - Dale1960 ER - TY - CHAP T1 - Semiconductor Devices, Chapter 8 Y1 - 1959 A1 - J.N. Shive PB - Van Nostrand CY - New Jersey N1 -
KW - Shive1959 ER - TY - JOUR T1 - Measurement of sheet resistivities with the four-point probe JF - Bell System Technical Journal Y1 - 1958 A1 - F.M. Smits VL - 34 N1 -
KW - Smits1958 ER - TY - JOUR T1 - A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power JF - Journal of Applied Physics Y1 - 1954 A1 - Chapin, D.M. A1 - Fuller, C.S. A1 - Pearson, G.L. VL - 25 N1 -
KW - Chapin1954 ER - TY - JOUR T1 - Electron-Hole Recombination in Germanium JF - Phys. Rev. Y1 - 1952 A1 - Hall, R. N. PB - American Physical Society VL - 87 N1 -
KW - Hall1952 ER - TY - JOUR T1 - Photoelectric Properties of Tonically Bombarded Silicon JF - Bell Systems Technical Journal Y1 - 1952 A1 - Kingsbury, E.F. A1 - Ohl, R.S. VL - 31 N1 -
KW - Kingsbury1952 ER - TY - JOUR T1 - Statistics of the Recombinations of Holes and Electrons JF - Physical Review Y1 - 1952 A1 - William Shockley A1 - W. T. Read AB - The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed. VL - 87 UR - http://link.aps.org/doi/10.1103/PhysRev.87.835 KW - Shockley1952 ER - TY - JOUR T1 - Zone-refining JF - Trans. AIME, Y1 - 1952 A1 - W. G. Pfann VL - 194 N1 -
KW - Pfann1952 ER - TY - BOOK T1 - Electrons and holes in semiconductors with applications to transistor electronics Y1 - 1950 A1 - William Shockley PB - van Nostrand CY - New York KW - shockley1950 ER - TY - JOUR T1 - Light-Sensitive Electric Device JF - U.S. Patent Y1 - 1941 A1 - Ohl, R.S. VL - 2 N1 -
KW - Ohl1941 ER - TY - JOUR T1 - A Thallous Sulphide Photo EMF Cell JF - Journal Opt. Society of America Y1 - 1939 A1 - Nix, F.C. A1 - Treptwo, A.W. VL - 29 N1 -
KW - Nix1939 ER - TY - JOUR T1 - Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen JF - Annalen der Physik Y1 - 1934 A1 - Bauer, Gerhard VL - 411 CP - 4 J1 - Ann. Phys. KW - Bauer1934 ER - TY - JOUR T1 - The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell JF - Review of Modern Physics Y1 - 1933 A1 - Grondahl, L.O. VL - 5 N1 -
KW - Grondahl1933 ER - TY - JOUR T1 - Uber eine neue Selen- Sperrschicht Photozelle JF - Physikalische Zeitschrift Y1 - 1931 A1 - Bergmann, L. VL - 32 N1 -
KW - Bergmann1931 ER - TY - JOUR T1 - Sur les rayons β secondaires produits dans un gaz par des rayons X JF - C.R.A.S. Y1 - 1923 A1 - P. Auger VL - 177 N1 -
KW - Auger1923 ER - TY - JOUR T1 - Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle JF - Zeitschrift für physikalische Chemie Y1 - 1918 A1 - Czochralski, J. VL - 92 KW - Czochralski1918 ER - TY - JOUR T1 - Generation and transformation of light JF - Annalen der Physik Y1 - 1905 A1 - A. Einstein KW - Einstein1905 VL - 17 N1 -
KW - Einstein1905 ER - TY - JOUR T1 - Distribution of energy in the spectrum JF - Annalen der Physik Y1 - 1901 A1 - M. Planck VL - 4 N1 -
KW - Planck1901 ER - TY - JOUR T1 - Distribution of energy in the normal spectrum JF - Verhandlungen der Deutschen Physikalischen Gesellschaft Y1 - 1900 A1 - M. Planck VL - 2 N1 -
KW - Planck1900 ER - TY - JOUR T1 - On a New Form of Selenium Photocell JF - American J. of Science Y1 - 1883 A1 - Fritts, C.E. VL - 26 N1 -
KW - Fritts1883 ER - TY - JOUR T1 - The Action of Light on Selenium JF - Proceedings of the Royal Society, London Y1 - 1877 A1 - Adams, W.G. A1 - Day, R.E. VL - A25 N1 -
KW - Adams1877 ER - TY - JOUR T1 - On Conductance in Metal Sulphides JF - Ann. d. Physik Y1 - 1874 A1 - Braun, F. VL - 153 N1 -
KW - Braun1874 ER - TY - JOUR T1 - Memoire sur les effects d´electriques produits sous l´influence des rayons solaires JF - Annalen der Physick und Chemie Y1 - 1841 A1 - Becquerel, A.E. VL - 54 N1 -
KW - Becquerel1841 ER - TY - JOUR T1 - Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques JF - Comptes Rendus de L´Academie des Sciences Y1 - 1839 A1 - Becquerel, A.E. VL - 9 N1 -
KW - Becquerel1839 ER -