TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER -