TY - JOUR
T1 - Solar Cell Device Physics
Y1 - 2010
A1 - Stephen J. Fonash
PB - Academic Press
SN - 978-0-12-374774-7
UR - http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-1
N1 -
1. Introduction
2. Material Properties and Device Physics Basic to Photovoltaics
3. Structures, Materials, and Scale
4. Homojunction Solar Cells
5. Semiconductor-semiconductor Heterojunction Solar Cells
6. Surface-barrier Solar Cells
7. Dye-sensitized Solar Cells
Appendicies
KW - Fonash2009
ER -
TY - JOUR
T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
JF - Applied Physics Letters
Y1 - 2005
A1 - Takashi Fuyuki
A1 - Hayato Kondo
A1 - Tsutomu Yamazaki
A1 - Yu Takahashi
A1 - Yukiharu Uraoka
KW - carrier lifetime
KW - electroluminescence
KW - elemental semiconductors
KW - MINORITY CARRIERS
KW - SILICON
KW - solar cells
PB - AIP
VL - 86
UR - http://link.aip.org/link/?APL/86/262108/1
KW - Fuyuki2005
ER -
TY - JOUR
T1 - 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells
JF - Applied Physics Letters
Y1 - 1998
A1 - Jianhua Zhao
A1 - Aihua Wang
A1 - Martin A Green
A1 - Francesca Ferrazza
KW - elemental semiconductors
KW - SILICON
KW - solar cells
KW - surface texture
PB - AIP
VL - 73
UR - http://link.aip.org/link/?APL/73/1991/1
KW - Zhao1991
ER -
TY - Generic
T1 - Surface texturing using reactive ion etching for multicrystalline silicon solar cells
T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference
Y1 - 1997
A1 - Fukui, K.
A1 - Inomata, Y.
A1 - Shirasawa, K.
JA - Twenty Sixth IEEE Photovoltaic Specialists Conference
CY - New York, NY, USA
N1 -
KW - Fukui1997
ER -
TY - BOOK
T1 - QED : The Strange Theory of Light and Matter
T2 - Princeton University Press, Princeton NJ
Y1 - 1985
A1 - Feynman, R. P.
JA - Princeton University Press, Princeton NJ
N1 -
KW - Feynman1985
ER -
TY - JOUR
T1 - On Phosphorus Diffusion in Silicon
JF - On Phosphorus Diffusion in Silicon
Y1 - 1983
A1 - S.M. Hu
A1 - P. Fahey
A1 - P. Sutton
VL - 54
N1 -
KW - Hu1983-2
ER -
TY - ABST
T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon
Y1 - 1981
A1 - W R Thurber
A1 - Mattis
A1 - Liu
A1 - Filliben
PB - U.S. Department of Commerce National Bureau of Standards
N1 -
KW - Thurber1981
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - boron
KW - electrical resistivity
KW - Hall effect
KW - hole density
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/2291/1
N1 -
KW - Thurber1980boron
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - density
KW - electrical resistivity
KW - electron mobility
KW - Hall effect
KW - neutron activation analysis
KW - phosphorus
KW - photometry
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/1807/1
KW - Thurber1980phos
ER -
TY - JOUR
T1 - Application of the superposition principle to solar-cell analysis
JF - IEEE Transactions on Electron Devices
Y1 - 1979
A1 - F.A. Lindholm
A1 - Fossum, J.G.
A1 - E.L. Burgess
AB - The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).
VL - 26
KW - Lindholm1979
ER -
TY - JOUR
T1 - Physical operation of back-surface-field silicon solar cells
JF - IEEE Transactions on Electron Devices
Y1 - 1977
A1 - Fossum, J.G.
AB - Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.
VL - 24
KW - Fossum1977
ER -
TY - JOUR
T1 - A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power
JF - Journal of Applied Physics
Y1 - 1954
A1 - Chapin, D.M.
A1 - Fuller, C.S.
A1 - Pearson, G.L.
VL - 25
N1 -
KW - Chapin1954
ER -
TY - JOUR
T1 - On a New Form of Selenium Photocell
JF - American J. of Science
Y1 - 1883
A1 - Fritts, C.E.
VL - 26
N1 -
KW - Fritts1883
ER -