TY - JOUR T1 - Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon JF - Solid-State Electronics Y1 - 2001 VL - 45 UR - http://linkinghub.elsevier.com/retrieve/pii/S0038110101001691http://api.elsevier.com/content/article/PII:S0038110101001691?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038110101001691?httpAccept=text/plain CP - 9 J1 - Solid-State Electronics KW - Brody2001 ER -