TY - JOUR
T1 - From the Cover: Anomalously weak solar convection
JF - Proceedings of the National Academy of Sciences
Y1 - 2012
A1 - Hanasoge, S. M.
A1 - Duvall, T. L.
A1 - Sreenivasan, K. R.
AB - Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient.
VL - 109
CP - 30
J1 - Proceedings of the National Academy of Sciences
KW - Hanasoge2012
ER -
TY - JOUR
T1 - Improved quantitative description of Auger recombination in crystalline silicon
JF - Physical Review B
Y1 - 2012
A1 - Richter, Armin
A1 - Stefan W. Glunz
A1 - Werner, Florian
A1 - Jan Schmidt
A1 - Andrés Cuevas
AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.
VL - 86
CP - 16
J1 - Phys. Rev. B
KW - Richter2012
ER -
TY - JOUR
T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics
JF - IEEE Journal of Photovoltaics
Y1 - 2012
A1 - Baker-Finch, Simeon C.
A1 - McIntosh, Keith R.
A1 - Terry, Mason L.
VL - 2
CP - 4
J1 - IEEE J. Photovoltaics
KW - 533
ER -
TY - CONF
T1 - OPAL 2: Rapid optical simulation of silicon solar cells
T2 - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference
Y1 - 2012
A1 - McIntosh, Keith R.
A1 - Baker-Finch, Simeon C.
AB - The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.
JA - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference
PB - IEEE
CY - Austin, TX, USA
SN - 978-1-4673-0064-3
KW - 532
ER -
TY - CONF
T1 - Gen III: Improved Performance at Lower Cost
T2 - 35th IEEE Photovoltaic Specialists Conference
Y1 - 2010
A1 - Peter J. Cousins
A1 - David D. Smith
A1 - Hsin-Chiao Luan
A1 - Jane Manning
A1 - Tim D. Dennis
A1 - Ann Waldhaue
A1 - Karen E. Wilson
A1 - Gabriel Harley
A1 - William P. Mulligan
JA - 35th IEEE Photovoltaic Specialists Conference
PB - IEEE
CY - Honolulu, Hawaii
N1 -
KW - Cousins2010
ER -
TY - JOUR
T1 - GISS Surface Temperature Analysis
Y1 - 2010
A1 - NASA
UR - http://data.giss.nasa.gov/gistemp/graphs/
N1 -
KW - NASA2010
ER -
TY - JOUR
T1 - Solar Cell Device Physics
Y1 - 2010
A1 - Stephen J. Fonash
PB - Academic Press
SN - 978-0-12-374774-7
UR - http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-1
N1 -
1. Introduction
2. Material Properties and Device Physics Basic to Photovoltaics
3. Structures, Materials, and Scale
4. Homojunction Solar Cells
5. Semiconductor-semiconductor Heterojunction Solar Cells
6. Surface-barrier Solar Cells
7. Dye-sensitized Solar Cells
Appendicies
KW - Fonash2009
ER -
TY - JOUR
T1 - Solar cell efficiency tables (version 35)
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2010
A1 - Martin A Green
A1 - Keith Emery
A1 - Yoshihiro Hishikawa
A1 - Wilhelm Warta
KW - Conversion efficiency
KW - Energy conversion
KW - solar cells
KW - Solar energy
KW - Solar power generation
AB - Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
VL - 18
UR - http://dx.doi.org/10.1002/pip.974
N1 - Compendex
KW - Green2010
ER -
TY - Generic
T1 - World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process
T2 - 35 IEEE Photovoltaic Specialist Conference
Y1 - 2010
A1 - Takamoto, T.
A1 - Agui, T.
A1 - Yoshida, A.
A1 - Nakaido, K.
A1 - Juso, H.
A1 - Sasaki, K.
A1 - Nakamura, K.
A1 - Yamaguchi, H.
A1 - Kodama, T.
A1 - Washio, H.
A1 - Imazumi, M.
A1 - Takahashi, M.
JA - 35 IEEE Photovoltaic Specialist Conference
CY - Honolulu HI, USA
N1 -
KW - Takamoto2010
ER -
TY - Generic
T1 - METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY
T2 - 34th IEEE Photovoltaic Specialists Conference
Y1 - 2009
A1 - F. Dimroth
A1 - W. Guter
A1 - J. Schöne
A1 - E. Welser
A1 - M. Steiner
A1 - E. Oliva
A1 - A. Wekkeli
A1 - G. Siefer
A1 - S.P. Philipps
A1 - A.W. Bett
JA - 34th IEEE Photovoltaic Specialists Conference
N1 -
KW - Dimroth2009
ER -
TY - JOUR
T1 - The path to 25% silicon solar cell efficiency: History of silicon cell evolution
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2009
A1 - Martin A Green
VL - 17
N1 -
KW - Green2009
ER -
TY - JOUR
T1 - Physics of Solar Cells
Y1 - 2009
A1 - Peter Würfel
PB - Wiley-VCH
CY - Mörlenbach, Germany
SN - 978-3-527-40857-3
UR - http://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/3527404287
N1 - 1. Problems of the Energy Economy
2. Photons
3. Semiconductors
4. Conversion of Thermal Radiation into Chemical Energy
5. Conversion of Chemical Energy into Electrical Energy
6. Basic Structure of Solar Cells
7. Limitations on Energy Conversion in Solar Cells
8. Concepts for Improving the Efficiency of Solar Cells
9. Prospects for the Future
Solutions
Appendix
References
Index
KW - Wurfel2005
ER -
TY - JOUR
T1 - Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2008
A1 - S. P. Bremner
A1 - M. Y. Levy
A1 - Christiana B Honsberg
AB - We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.
VL - 16
UR - http://dx.doi.org/10.1002/pip.799
KW - Bremner2008
ER -
TY - JOUR
T1 - Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients
JF - Solar Energy Materials and Solar Cells
Y1 - 2008
A1 - Martin A Green
KW - Absorption coefficient
KW - optical properties
KW - SILICON SOLAR CELLS
AB - An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range.
VL - 92
UR - http://www.sciencedirect.com/science/article/pii/S0927024808002158
KW - green_self-consistent_2008
ER -
TY - JOUR
T1 - Applied Photovoltaics
Y1 - 2007
A1 - Wenham, S.R.
A1 - Martin A Green
A1 - Watt, M. E.
A1 - R. Corkish
AB -
PB - Earthscan
CY - London, UK
SN - 1-84407-401-3
UR - http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1
N1 - Introduction
1. The Characteristics of Sunlight
2. Semiconductors and P-N Junctions
3. The Behavior of Solar Cells
4. Cell Properties and Design
5. PV Cell Interconnection and Module Fabrication
6. Stand-Alone Photovoltaic System Components
7. Designing Stand-Alone Photovoltaic Systems
8. Specific Purpose Photovoltaic Applications
9. Remote Area Power Supply Systems
10. Grid-Connected Photovoltaic Systems
11. Photovoltaic Water Pumping System Components
12. PV Water Pumping System Design
Appendicies
Index
KW - Wenham2007
ER -
TY - Generic
T1 - Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells
T2 - 22nd European Photovoltaic Specialist Conference
Y1 - 2007
A1 - De Ceuster, D.
A1 - P. Cousins
A1 - D. Rose
A1 - M. Cudzinovic
A1 - W. Mulligan
JA - 22nd European Photovoltaic Specialist Conference
N1 -
KW - DeCeuster2007
ER -
TY - JOUR
T1 - A review and comparison of different methods to determine the series resistance of solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2007
A1 - PYSCH, D
A1 - A. Mette
A1 - Stefan W. Glunz
VL - 91
N1 -
KW - Pysch2007
ER -
TY - JOUR
T1 - Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2007
A1 - A. Mette
A1 - et al
VL - 15
N1 -
KW - Mette2007
ER -
TY - JOUR
T1 - Global temperature change
JF - Proceedings of the National Academy of Sciences
Y1 - 2006
A1 - Hansen, J.
VL - 103
N1 -
KW - Hansen2006
ER -
TY - CONF
T1 - Low Light Performance of Mono-Crystalline Silicon Solar Cells
T2 - 4th World Conference on Photovoltaic Energy Conference
Y1 - 2006
A1 - Gabriela Bunea
A1 - Karen Wilson
A1 - Yevgeny Meydbray
A1 - Matthew Campbell
A1 - Denis De Ceuster
JA - 4th World Conference on Photovoltaic Energy Conference
CY - Waikoloa, HI
UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1
KW - bunea_low_2006
ER -
TY - JOUR
T1 - Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications
JF - Solid-State Electronics
Y1 - 2006
A1 - M. Y. Levy
A1 - Christiana B Honsberg
VL - 50
KW - Levy2006
ER -
TY - BOOK
T1 - Semiconductor material and device characterization
Y1 - 2006
A1 - Dieter Schroder
PB - IEEE Press; Wiley
CY - Piscataway NJ; Hoboken N.J.
SN - 9780471739067
KW - Schroder2006
ER -
TY - Generic
T1 - Approaching the 29% limit efficiency of silicon solar cells
T2 - Thirty-First IEEE Photovoltaic Specialists Conference
Y1 - 2005
A1 - Richard M Swanson
JA - Thirty-First IEEE Photovoltaic Specialists Conference
PB - 01/2005
CY - Lake buena Vista, FL, USA
N1 -
KW - Swanson2005
ER -
TY - JOUR
T1 - Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2005
A1 - Bothe, Karsten
A1 - Sinton, Ron
A1 - Jan Schmidt
VL - 13
N1 -
KW - Bothe2005
ER -
TY - JOUR
T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
JF - Applied Physics Letters
Y1 - 2005
A1 - Takashi Fuyuki
A1 - Hayato Kondo
A1 - Tsutomu Yamazaki
A1 - Yu Takahashi
A1 - Yukiharu Uraoka
KW - carrier lifetime
KW - electroluminescence
KW - elemental semiconductors
KW - MINORITY CARRIERS
KW - SILICON
KW - solar cells
PB - AIP
VL - 86
UR - http://link.aip.org/link/?APL/86/262108/1
KW - Fuyuki2005
ER -
TY - JOUR
T1 - Photovoltaic Solar Energy Generation
Y1 - 2005
A1 - Adolf Goetzberger
A1 - Volker Uwe Hoffmann
PB - Springer
CY - Berlin, Germany
SN - 3-540-23676-7
UR - http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books&ie=UTF8&qid=1279649098&sr=1-2
N1 - 1. What is Photovoltaics?
2. Physics of Solar Cells
3. Silicon Solar Cell Material and Technology
4. Crystalline Thin-Film Silicon
5. Other Materials, New Concepts
6. Solar Cells and Solar Modules
7. PV Systems
8. PV Systems Installation Possibilities
9. Environmental Impacts by PV Systems
10. Efficinecy and Performance of PV Systems
11. PV Markets Support Measures and Costs
12. The Future PV
13. Other (Perhaps Competing) CO2-Free Energy Sources
14. Popular Killing Arguments Against PV
References
Index
KW - Goetzberger2005
ER -
TY - JOUR
T1 - Electronic color charts for dielectric films on silicon
JF - Optics Express
Y1 - 2004
A1 - Justin Henrie
A1 - Spencer Kellis
A1 - Stephen Schultz
A1 - Aaron Hawkins
KW - Color
KW - measurement
KW - optical properties
KW - Thin films
AB - This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.
VL - 12
UR - http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464
N1 -
KW - Henrie2004
ER -
TY - Generic
T1 - Dependence of aluminium alloying on solar cell processing conditions
T2 - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
Y1 - 2003
A1 - Christiana B Honsberg
A1 - Anwar, K.K.
A1 - Mehrvarz, H.R.
A1 - Cotter, J.E.
A1 - Wenham, S.R.
JA - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
N1 -
KW - Honsberg2003
ER -
TY - JOUR
T1 - Handbook of Photovoltaic Science and Engineering
Y1 - 2003
A1 - Luque, A.
A1 - Hegedus, S.
PB - John Wiley & Sons Ltd.
CY - Chichester, England
SN - 0-471-49196-9
UR - http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7
N1 - 1. Status, Trends, Challenges and the Bright Future of Solar Electricity from Photovoltaics.
2. Motivation for Photovoltaic Application and Development
3. The Physics of the Solar Cell
4. Theoretical Limits of Photovoltaic Conversion
5. Solar Grade Silicon Feedstock
6. Bulk Crystal Growth and Wafering for PV
7. Crystalline Silicon Solar Cells and Modules
8. Thin-film Silicon Solar Cells
9. High-efficiency III-V Multijunction Solar Cells
10. Space Solar Cells and Arrays
11. Photovoltaic Concentrators
12. Amorphous Silicon-based Solar Cells
13. Cu(InGa)Se2 Solar Cells
14. Cadmium Telluride Solar Cells
15. Dye-sensitized Solar Cells
16. Measurement and Characterization of Solar Cells and Modules
17. Photovoltaic Systems
18. Electrochemical Storage for Photovoltaics
19. Power Conditioning for Photovoltaic Power Systems
20. Energy Collected and Delivered by PV Modules
21. Economic Analysis and Environmental Aspects of Photovoltaic Systems
22. PV in Architecture
23. Photovoltaics and Development
24. Financing PV Growth
Index
KW - Luque2003
ER -
TY - JOUR
T1 - The Physics of Solar Cells
Y1 - 2003
A1 - Jenny Nelson
AB -
PB - Imperial College Press
CY - London, UK
SN - 1-86094-340-3
UR - http://www.amazon.com/Physics-Solar-Properties-Semiconductor-Materials/dp/1860943497
N1 - 1. Introduction
2. Photons In, Electrons Out: Basic Principles of PV
3. Electrons and Holes and Semiconductors
4. Generation and Recombination
5. Junctions
6. Analysis of the p-n Junction
7. Monocrystalline Solar Cells
8. Thin Film Solar Cells
9. Managing Light
10. Over the Limit: Strategies for High Efficiency
Solutions
Index
KW - Nelson2003
ER -
TY - JOUR
T1 - Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
JF - Journal of Applied Physics
Y1 - 2003
A1 - Pietro P Altermatt
A1 - Schenk, Andreas
A1 - Geelhaar, Frank
A1 - Heiser, Gernot
AB - The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.
VL - 93
CP - 3
J1 - J. Appl. Phys.
KW - Altermatt2003
ER -
TY - JOUR
T1 - Solar Position Algorithm for Solar Radiation Applications
Y1 - 2003
A1 - Reda, I
A1 - Andreas, A
N1 -
KW - Reda2003
ER -
TY - JOUR
T1 - General parameterization of Auger recombination in crystalline silicon
JF - Journal of Applied Physics
Y1 - 2002
A1 - Mark J Kerr
A1 - Andrés Cuevas
KW - Auger effect
KW - carrier lifetime
KW - electron-hole recombination
KW - elemental semiconductors
KW - SILICON
PB - AIP
VL - 91
UR - http://link.aip.org/link/?JAP/91/2473/1
KW - Kerr2002
ER -
TY - JOUR
T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements
JF - Journal of Applied Physics
Y1 - 2002
A1 - Mark J Kerr
A1 - Andrés Cuevas
A1 - Ronald A. Sinton
AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.
VL - 91
N1 -
KW - Kerr2002
ER -
TY - JOUR
T1 - 24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Zhao, J.
A1 - Aihua Wang
A1 - Martin A Green
VL - 66
N1 -
KW - Zhao2001
ER -
TY - JOUR
T1 - Computing the solar vector
JF - Solar Energy
Y1 - 2001
A1 - Manuel Blanco-Muriel
A1 - Diego C. Alarcón-Padilla
A1 - Teodoro López-Moratalla
A1 - MartÍn Lara-Coira
KW - Solar tracking
VL - 70
UR - http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993
N1 -
KW - BlancoMuriel2001
ER -
TY - JOUR
T1 - Degradation of carrier lifetime in Cz silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Stefan W. Glunz
A1 - S. Rein
A1 - W. Warta
A1 - J. Knobloch
A1 - W. Wettling
KW - Defects
VL - 65
UR - http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f
N1 -
KW - Glunz2001
ER -
TY - JOUR
T1 - High performance light trapping textures for monocrystalline silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Campbell, Patrick
A1 - Martin A Green
AB - Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.
VL - 65
CP - 1-4
J1 - Solar Energy Materials and Solar Cells
KW - Campbell2001
ER -
TY - JOUR
T1 - Improvements in numerical modelling of highly injected crystalline silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Pietro P Altermatt
A1 - Sinton, R.A.
A1 - G. Heiser
AB - We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
VL - 65
UR - http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1
KW - Altermatt2001
ER -
TY - Generic
T1 - Natural Sunlight Calibration of Silicon Solar Cells.
T2 - 17th European Photovoltaic Solar Energy Conference
Y1 - 2001
A1 - W. Keogh
A1 - Andrew W Blakers
JA - 17th European Photovoltaic Solar Energy Conference
CY - Munich, Germany
N1 -
KW - Keogh2001
ER -
TY - Generic
T1 - A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits
T2 - 17th European Photovoltaic Solar Energy Conference
Y1 - 2001
A1 - Christiana B Honsberg
A1 - R. Corkish
A1 - S. P. Bremner
JA - 17th European Photovoltaic Solar Energy Conference
N1 -
KW - Honsberg2001
ER -
TY - CONF
T1 - Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells
T2 - 17th European Photovoltaic Solar Energy Conference
Y1 - 2001
A1 - S. Bowden
A1 - A. Rohatgi
JA - 17th European Photovoltaic Solar Energy Conference
CY - Munich, Germany
KW - Bowden2001
ER -
TY - JOUR
T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon
JF - Journal of Applied Physics
Y1 - 2001
A1 - Daniel Macdonald
A1 - Ronald A. Sinton
A1 - Andrés Cuevas
KW - CARRIER DENSITY
KW - carrier lifetime
KW - electron traps
KW - electron-hole recombination
KW - elemental semiconductors
KW - hole traps
KW - photoconductivity
KW - SILICON
KW - solar cells
PB - AIP
VL - 89
UR - http://link.aip.org/link/?JAP/89/2772/1
KW - Macdonald2001
ER -
TY - THES
T1 - Aluminium Back Surface Field in Buried Contact Solar Cells
Y1 - 2000
A1 - Anwar, K.K.
PB - University of New South Wales
VL - Bachelor of Engineering
N1 -
KW - Anwar2000
ER -
TY - JOUR
T1 - Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities
JF - Journal of Applied Physics
Y1 - 2000
A1 - Jan Schmidt
A1 - Mark J Kerr
A1 - Pietro P Altermatt
KW - Auger effect
KW - carrier lifetime
KW - electron-hole recombination
KW - elemental semiconductors
KW - photoconductivity
KW - SILICON
PB - AIP
VL - 88
UR - http://link.aip.org/link/?JAP/88/1494/1
KW - Schmidt2000
ER -
TY - Generic
T1 - The Influence of Edge Recombination on a Solar Cell’s IV Curve
T2 - 16th European Photovoltaic Solar Energy Conference
Y1 - 2000
A1 - McIntosh, K. R.
A1 - Christiana B Honsberg
JA - 16th European Photovoltaic Solar Energy Conference
N1 -
KW - McIntosh2000
ER -
TY - Generic
T1 - Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques
T2 - 16th European Photovoltaic Solar Energy Conference
Y1 - 2000
A1 - A.S.H. van der Heide
A1 - et al
JA - 16th European Photovoltaic Solar Energy Conference
CY - Glasgow (United Kingdom)
N1 -
KW - vanderHeide2000
ER -
TY - Generic
T1 - Outdoor measurement of 28% efficiency for a mini-concentrator module
T2 - National Center for Photovoltaics Program Review Meeting
Y1 - 2000
A1 - O’Neil, M.J.
A1 - McDanal, A.J.
JA - National Center for Photovoltaics Program Review Meeting
CY - Denver, USA
N1 -
KW - ONeil2000
ER -
TY - CONF
T1 - A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization
T2 - 16th European Photovoltaic Solar Energy Conference
Y1 - 2000
A1 - Sinton, R.A.
A1 - Andrés Cuevas
JA - 16th European Photovoltaic Solar Energy Conference
CY - Glasgow, Scotland
KW - Sinton2000
ER -
TY - Generic
T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions
T2 - 16h European Solar Energy Conference
Y1 - 2000
A1 - R. Corkish
A1 - Luke, K. L.
A1 - Pietro P Altermatt
A1 - G. Heiser
JA - 16h European Solar Energy Conference
N1 -
KW - Corkish2000
ER -
TY - CONF
T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions
T2 - Proceedings of the 16h European Solar Energy Conference
Y1 - 2000
A1 - R. Corkish
A1 - Luke, K. L.
A1 - Pietro P Altermatt
A1 - G. Heiser
JA - Proceedings of the 16h European Solar Energy Conference
PB - James and James
CY - Glasgow UK
SN - 9781902916187
N1 -
KW - Corkish2000
ER -
TY - JOUR
T1 - Solar Electricity
Y1 - 2000
A1 - Tomas Markvart
PB - John Wiley & Sons
CY - Chichester, England
SN - 0-471-98853-7
UR - http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-1
N1 - 1. Electricity from the Sun
2. Solar Radiation
3. Solar Cells
4. Photovoltaic System Engineering
5. Applications
6. Environmental Impacts of Photovoltaics
7. Advanced and Special Topics
Index
KW - Markvart2000
ER -
TY - BOOK
T1 - Solid State Electronic Devices
Y1 - 2000
A1 - Ben G. Streetman
PB - Prentice Hall
N1 -
KW - Streetman2001
ER -
TY - JOUR
T1 - Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
JF - Journal of Applied Physics
Y1 - 1999
A1 - Henning Nagel
A1 - Christopher Berge
A1 - Armin G Aberle
KW - carrier lifetime
KW - photoconductivity
PB - AIP
VL - 86
UR - http://link.aip.org/link/?JAP/86/6218/1
KW - Nagel1999
ER -
TY - Generic
T1 - 19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface
T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
Y1 - 1998
A1 - Zhao, J.
A1 - Wang, A.
A1 - Martin A Green
JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
CY - Vienna, Austria
N1 -
KW - Zhao1998
ER -
TY - JOUR
T1 - 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells
JF - Applied Physics Letters
Y1 - 1998
A1 - Jianhua Zhao
A1 - Aihua Wang
A1 - Martin A Green
A1 - Francesca Ferrazza
KW - elemental semiconductors
KW - SILICON
KW - solar cells
KW - surface texture
PB - AIP
VL - 73
UR - http://link.aip.org/link/?APL/73/1991/1
KW - Zhao1991
ER -
TY - Generic
T1 - Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells
T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
Y1 - 1998
A1 - Ruby, D. S.
A1 - Yang, P.
A1 - Zaidi, S.
A1 - Brueck, S.
A1 - Roy, M.
A1 - Narayanan, S.
JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
CY - Vienna, Austria
N1 -
KW - Ruby1998
ER -
TY - JOUR
T1 - 20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1997
A1 - Zhao, J.
A1 - Wang, A.
A1 - Yun, F.
A1 - Zhang, G.
A1 - Roche, D.M.
A1 - Wenham, S.R.
A1 - Martin A Green
VL - 5
N1 -
KW - Zhao1997
ER -
TY - Generic
T1 - Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions
T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference
Y1 - 1997
A1 - Einhaus, R.
A1 - Vazsonyi, E.
A1 - Szlufcik, J.
A1 - Nijs, J.
A1 - Mertens, R.
JA - Twenty Sixth IEEE Photovoltaic Specialists Conference
CY - New York, NY, USA
N1 -
KW - Einhaus1997
ER -
TY - Generic
T1 - Low-cost industrial technologies of crystalline silicon solar cells
T2 - Proceedings-of-the-IEEE
Y1 - 1997
A1 - Szlufcik, J.
A1 - Sivoththaman, S.
A1 - Nlis, J.F.
A1 - Mertens, R.P.
A1 - Van-Overstraeten, R.
JA - Proceedings-of-the-IEEE
VL - 85
N1 -
KW - Szlufcik1997
ER -
TY - JOUR
T1 - Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications
JF - physica status solidi (a)
Y1 - 1997
A1 - Chandramohan, R.
A1 - Sanjeeviraja, C.
A1 - Mahalingam, T.
VL - 163
CP - 2
J1 - phys. stat. sol. (a)
KW - Chandramohan1997
ER -
TY - JOUR
T1 - Recent progress in MIS solar cells
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1997
A1 - Hezel, R.
VL - 5
N1 -
KW - Hezel1997
ER -
TY - Generic
T1 - A simple processing sequence for selective emitters
T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference
Y1 - 1997
A1 - Horzel, J.
A1 - Szlufcik, J.
A1 - Nijs, J.
A1 - Mertens, R.
JA - Twenty Sixth IEEE Photovoltaic Specialists Conference
CY - New York, NY, USA
N1 -
KW - Horzel1997
ER -
TY - Generic
T1 - Surface texturing using reactive ion etching for multicrystalline silicon solar cells
T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference
Y1 - 1997
A1 - Fukui, K.
A1 - Inomata, Y.
A1 - Shirasawa, K.
JA - Twenty Sixth IEEE Photovoltaic Specialists Conference
CY - New York, NY, USA
N1 -
KW - Fukui1997
ER -
TY - JOUR
T1 - Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
JF - Applied Physics Letters
Y1 - 1996
A1 - Ronald A. Sinton
A1 - Andrés Cuevas
KW - carrier lifetime
KW - CV CHARACTERISTIC
KW - MINORITY CARRIERS
KW - photoconductivity
KW - SEMICONDUCTOR MATERIALS
KW - SILICON
KW - STEADY – STATE CONDITIONS
PB - AIP
VL - 69
UR - http://link.aip.org/link/?APL/69/2510/1
KW - Sinton1996
ER -
TY - JOUR
T1 - Texturing of polycrystalline silicon
JF - Solar Energy Materials and Solar Cells
Y1 - 1996
A1 - M. J. Stocks
A1 - A. J. Carr
A1 - Andrew W Blakers
VL - 40
UR - http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541
KW - Stocks1996
ER -
TY - JOUR
T1 - Optical properties of intrinsic silicon at 300 K
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1995
A1 - Martin A Green
A1 - Keevers, Mark J.
VL - 3
N1 -
KW - Green1995
ER -
TY - JOUR
T1 - On some thermodynamic aspects of photovoltaic solar energy conversion
JF - Solar Energy Materials and Solar Cells
Y1 - 1995
A1 - Baruch, P.
A1 - De Vos, A.
A1 - Landsberg, P. T.
A1 - J.E. Parrott
VL - 36
KW - Baruch1995
ER -
TY - JOUR
T1 - Sun’s Role in Warming Is Discounted
JF - Science
Y1 - 1995
A1 - Kerr, R. A.
VL - 268
N1 -
KW - Kerr1995
ER -
TY - JOUR
T1 - 7000 High Efficiency Cells for a Dream
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Verlinden, P.J.
A1 - Richard M Swanson
A1 - Crane, R.A.
VL - 2
N1 -
KW - Verlinden1994
ER -
TY - JOUR
T1 - Attaining Thirty-Year Photovoltaic System Lifetime
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Durand, S.
N1 -
KW - Durand1994
ER -
TY - JOUR
T1 - Buried contact concentrator solar cells
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Jordan, D.
A1 - Nagle, J.P.
VL - 2
N1 -
KW - Jordan1994
ER -
TY - JOUR
T1 - Defining terms for crystalline silicon solar cells
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Basore, P.A.
VL - 2
N1 -
KW - Basore1994
ER -
TY - JOUR
T1 - Departures from the principle of superposition in silicon solar cells
JF - Journal of Applied Physics
Y1 - 1994
A1 - Robinson, S. J.
A1 - Armin G Aberle
A1 - Martin A Green
VL - 76
N1 -
KW - Robinson1994
ER -
TY - JOUR
T1 - Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors
JF - Journal of Applied Physics
Y1 - 1994
A1 - A. B. Sproul
KW - ANALYTICAL SOLUTION
KW - carrier lifetime
KW - DECAY
KW - MINORITY CARRIERS
KW - RECOMBINATION
KW - SEMICONDUCTOR MATERIALS
KW - SURFACES
PB - AIP
VL - 76
UR - http://link.aip.org/link/?JAP/76/2851/1
KW - Sproul1994
ER -
TY - BOOK
T1 - {VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
Y1 - 1994
A1 - Ghandhi, Sorab K.
PB - Wiley-Interscience
SN - 0471580058
KW - Ghandi1994
ER -
TY - JOUR
T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K
JF - Journal of Applied Physics
Y1 - 1993
A1 - Misiakos, Konstantinos
A1 - Tsamakis, Dimitris
AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3.
VL - 74
CP - 5
J1 - J. Appl. Phys.
KW - Misiakos93
ER -
TY - JOUR
T1 - Choice of an equivalent black body solar temperature
JF - Solar Energy
Y1 - 1993
A1 - J.E. Parrott
VL - 51
UR - http://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb6
N1 -
KW - Parrott1993
ER -
TY - CONF
T1 - A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells
T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
Y1 - 1993
A1 - Armin G Aberle
A1 - Wenham, S.R.
A1 - Martin A Green
JA - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
CY - Louisville, KY
KW - Aberle1993
ER -
TY - JOUR
T1 - A simple and effective light trapping technique for polycrystalline silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 1992
A1 - G. Willeke
A1 - H. Nussbaumer
A1 - H. Bender
A1 - E. Bucher
VL - 26
UR - http://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c51
KW - Willeke1992
ER -
TY - BOOK
T1 - Solar Cells - Operating Principles, Technology and System Application
Y1 - 1992
A1 - Martin A Green
PB - University of NSW
CY - Kensington, Australia
N1 -
KW - Green1992
ER -
TY - Generic
T1 - Buried contact concentrator solar cells
T2 - Twenty Second IEEE Photovoltaic Specialists Conference
Y1 - 1991
A1 - Wohlgemuth, J.H.
A1 - Narayanan, S.
JA - Twenty Second IEEE Photovoltaic Specialists Conference
VL - 1
N1 -
KW - Wohlgemuth1991
ER -
TY - Generic
T1 - Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates
T2 - 22nd IEEE Photovoltaic Specialists Conference
Y1 - 1991
A1 - Wenger, H.J.
A1 - Schaefer, J.
A1 - Rosenthal, A.
A1 - Hammond, B.
A1 - Schlueter, L.
JA - 22nd IEEE Photovoltaic Specialists Conference
CY - Las Vegas, USA
N1 -
KW - Wenger1991
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
JF - Journal of Applied Physics
Y1 - 1991
A1 - A. B. Sproul
A1 - Martin A Green
KW - CARRIER DENSITY
KW - IV CHARACTERISTIC
KW - JUNCTION DIODES
KW - MEDIUM TEMPERATURE
KW - MINORITY CARRIERS
KW - SANDIA LABORATORIES
KW - SILICON
KW - SILICON DIODES
KW - TEMPERATURE DEPENDENCE
PB - AIP
VL - 70
UR - http://link.aip.org/link/?JAP/70/846/1
N1 -
KW - Sproul1991
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
JF - Journal of Applied Physics
Y1 - 1991
A1 - A. B. Sproul
A1 - Martin A Green
VL - 70
N1 -
KW - Sproul1991
ER -
TY - Generic
T1 - Improvements in Silicon Solar Cell Performance
T2 - 22nd IEEE PV Specialists Conference
Y1 - 1991
A1 - Zhao, J.
A1 - Wang A.
A1 - Dai, X.
A1 - Martin A Green
A1 - Wenham, S.R.
JA - 22nd IEEE PV Specialists Conference
N1 -
KW - Zhao1991
ER -
TY - BOOK
T1 - The Role of Photovoltaics in Reducing Greenhouse Gas Emissions
Y1 - 1991
A1 - Andrew W Blakers
A1 - Martin A Green
A1 - T. Leo
A1 - H. Outhred
A1 - B. Robins
PB - Australian Government Publishing Service
CY - Canberra
N1 -
KW - Blakers1991
ER -
TY - Generic
T1 - A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources
T2 - 22nd IEEE PV Specialists Conference
Y1 - 1991
A1 - King, D.
A1 - Hansen, B.
JA - 22nd IEEE PV Specialists Conference
N1 -
KW - King1991
ER -
TY - Generic
T1 - 18% efficient polycrystalline silicon solar cells
T2 - Twenty First IEEE Photovoltaic Specialists Conference
Y1 - 1990
A1 - Narayanan, S.
A1 - Zolper, J.
A1 - Yun, F.
A1 - Wenham, S.R.
A1 - A. B. Sproul
A1 - Chong,C.M.
A1 - Martin A Green
JA - Twenty First IEEE Photovoltaic Specialists Conference
VL - 1
N1 -
KW - Narayanan1990
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration at 300 K
JF - Applied Physics Letters
Y1 - 1990
A1 - A. B. Sproul
A1 - Martin A Green
A1 - Zhao, J.
VL - 57
N1 -
KW - Sproul1990
ER -
TY - JOUR
T1 - Minority-carrier transport parameters in n-type silicon
JF - IEEE Transactions on Electron Devices
Y1 - 1990
A1 - Wang, C.H.
A1 - Misiakos, K.
A1 - Neugroschel, A.
VL - 37
N1 -
KW - Wang1990
ER -
TY - JOUR
T1 - Modeling daylight availability and irradiance components from direct and global irradiance
JF - Solar Energy
Y1 - 1990
A1 - Richard Perez
A1 - Pierre Ineichen
A1 - Robert Seals
A1 - Joseph Michalsky
A1 - Ronald Stewart
VL - 44
UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e
N1 -
KW - Perez1990
ER -
TY - JOUR
T1 - Modeling daylight availability and irradiance components from direct and global irradiance
JF - Solar Energy
Y1 - 1990
A1 - Richard Perez
A1 - Pierre Ineichen
A1 - Robert Seals
A1 - Joseph Michalsky
A1 - Ronald Stewart
AB - This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.
VL - 44
UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e
N1 -
KW - Perez1990
ER -
TY - JOUR
T1 - Numerical modeling of textured silicon solar cells using PC-1D
JF - Electron Devices, IEEE Transactions on
Y1 - 1990
A1 - Basore, P.A.
KW - elemental semiconductors
KW - finite element analysis
KW - finite-element program
KW - front-surface recombination
KW - heavy doping
KW - high-level injection
KW - internal performance
KW - light trapping
KW - microcomputer applications
KW - modeling semiconductor devices
KW - multidimensional effects
KW - nonplanar structures
KW - numerical models
KW - oblique photon path angles
KW - PC-1D
KW - PC-1D Version 2
KW - personal computers
KW - semiconductor device models
KW - semiconductors
KW - Si
KW - SILICON
KW - solar cells
KW - spectral quantum efficiency data
KW - textured solar cells
KW - transients
AB - PC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells
VL - 37
KW - basore1990
ER -
TY - Generic
T1 - Photovoltaics: Coming of Age
T2 - 21st IEEE Photovoltaic Specialists Conference
Y1 - 1990
A1 - Martin A Green
AB - The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.
JA - 21st IEEE Photovoltaic Specialists Conference
CY - Orlando, USA
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582
N1 -
KW - Green1990
ER -
TY - JOUR
T1 - 16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell
JF - Applied Physics Letters
Y1 - 1989
A1 - John C. Zolper
A1 - Srinivasamohan Narayanan
A1 - Stuart R. Wenham
A1 - Martin A Green
VL - 55
UR - http://apl.aip.org/applab/v55/i22/p2363_s1
KW - Zolper1989
ER -
TY - JOUR
T1 - Revised optical air mass tables and approximation formula
JF - Applied Optics
Y1 - 1989
A1 - Fritz Kasten
A1 - Andrew T. Young
PB - OSA
VL - 28
UR - http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735
N1 -
KW - Kasten89
ER -
TY - ABST
T1 - Buried contact solar cell
Y1 - 1988
A1 - Stuart R. Wenham
A1 - Martin A Green
UR - http://www.freepatentsonline.com/4726850.html
N1 -
KW - Wenham1988
ER -
TY - Generic
T1 - SOLAR SIMULATION - PROBLEMS AND SOLUTIONS
T2 - 20th IEEE PV Specialists Conference
Y1 - 1988
A1 - Emery, K.
A1 - Myers, D.
A1 - Rummel, S.
JA - 20th IEEE PV Specialists Conference
N1 -
KW - Emery1988
ER -
TY - JOUR
T1 - Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
JF - Journal of Applied Physics
Y1 - 1987
A1 - Keung L. Luke
A1 - Li-Jen Cheng
KW - carrier lifetime
KW - LASERRADIATION HEATING
KW - MINORITY CARRIERS
KW - RECOMBINATION
KW - SILICON
KW - SILICON SOLAR CELLS
KW - SURFACE PROPERTIES
KW - THEORETICAL DATA
KW - VELOCITY
KW - WAFERS
PB - AIP
VL - 61
UR - http://link.aip.org/link/?JAP/61/2282/1
KW - Luke1987
ER -
TY - JOUR
T1 - Light trapping properties of pyramidally textured surfaces
JF - Journal of Applied Physics
Y1 - 1987
A1 - Campbell, Patrick
A1 - Martin A Green
VL - 62
CP - 1
J1 - J. Appl. Phys.
KW - Campbell1987
ER -
TY - JOUR
T1 - Recombination in highly injected silicon
JF - Electron Devices, IEEE Transactions on
Y1 - 1987
A1 - Sinton, R.A.
A1 - Richard M Swanson
VL - 34
N1 -
KW - Sinton1987
ER -
TY - JOUR
T1 - Flat-Plate Solar Array Project Final Report
Y1 - 1986
A1 - Ross, R.G. Jnr.
A1 - Smokler, M.I.
PB - Jet Propulsion Laboratory
N1 -
KW - Ross1986
ER -
TY - JOUR
T1 - Calculation of surface generation and recombination velocities at the Si-SiO2 interface
JF - Journal of Applied Physics
Y1 - 1985
A1 - Eades, Wendell D.
A1 - Richard M Swanson
VL - 58
N1 -
KW - Eades1985
ER -
TY - BOOK
T1 - Perception
Y1 - 1985
A1 - Sekuler, R.
A1 - Blake, R.
PB - Alfred A. Knopf Inc
CY - New York
N1 -
KW - Sekuler1985
ER -
TY - BOOK
T1 - QED : The Strange Theory of Light and Matter
T2 - Princeton University Press, Princeton NJ
Y1 - 1985
A1 - Feynman, R. P.
JA - Princeton University Press, Princeton NJ
N1 -
KW - Feynman1985
ER -
TY - JOUR
T1 - Limiting Efficiency of Silicon Solar Cells
JF - IEEE TRANSACTIONS ON ELECTRON DEVICES
Y1 - 1984
A1 - T. Tiedje
A1 - E Yablonovich
A1 - G.D. Cody
A1 - B.G. Brooks
VL - ED-31
N1 -
KW - Tiedje1984
ER -
TY - BOOK
T1 - Photovoltaics for Residential Applications
Y1 - 1984
A1 - SERI
PB - Solar Energy Research Institute
CY - Golden, Colorado
N1 -
KW - seri1984
ER -
TY - JOUR
T1 - Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
JF - IEEE Transactions on Electron Devices
Y1 - 1983
A1 - G. Masetti
A1 - M. Severi
A1 - S. Solmi
KW - arsenic
KW - boron
KW - CARRIER DENSITY
KW - carrier mobility
KW - digital simulation
KW - elemental semiconductors
KW - heavily doped semiconductors
KW - phosphorus
KW - SILICON
AB - New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values
VL - ED-30
N1 - Copyright 1983, {IEE}
KW - Masetti1983
ER -
TY - JOUR
T1 - On Phosphorus Diffusion in Silicon
JF - On Phosphorus Diffusion in Silicon
Y1 - 1983
A1 - S.M. Hu
A1 - P. Fahey
A1 - P. Sutton
VL - 54
N1 -
KW - Hu1983-2
ER -
TY - BOOK
T1 - Solar Cells: From Basic to Advanced Systems
Y1 - 1983
A1 - Hu, C
A1 - White, R.M.
PB - McGraw-Hill
CY - New York
N1 -
KW - Hu1983
ER -
TY - CHAP
T1 - Voltaic Cell, Chapter XIV
Y1 - 1983
A1 - P. Benjamin
PB - Wiley
CY - New York
N1 -
KW - Benjamin1983
ER -
TY - JOUR
T1 - Accuracy of Analytical Expressions for Solar Cell Fill Factors
JF - Solar Cells
Y1 - 1982
A1 - Martin A Green
VL - 7
N1 -
KW - Green1982
ER -
TY - JOUR
T1 - Intensity Enhancement in Textured Optical Sheets for Solar Cells
JF - IEEE Transactions on Electron Devices
Y1 - 1982
A1 - E Yablonovich
A1 - G.D. Cody
VL - ED-29
N1 -
KW - Yablonovich1982
ER -
TY - JOUR
T1 - Solar Cells: Operating Principles, Technology and System Applications
Y1 - 1982
A1 - Martin A Green
AB -
PB - Prentice-Hall
SN - 0-85823-580-3
N1 - 1. Solar Cells and Sunlight
2. Review of Semiconductor Properties
3. Generation, Recombination and the Basic Equation of Device Physics
4. p-n Junction Diodes
5. Efficiency Limits, Losses and Measurement
6. Standard Silicon Solar Cell Technology
7. Improved Silicon Cell Technology
8. Design of Silicon Solar Cells
9. Other Device Structures
10. Other Semiconductor Materials
11.Concentrating Systems
12. Photovoltaic Systems: Components and Applications
13. Design of Stand-alone Systems
14. Residential and Centralised Photovoltaic Power Systems
Appendix A: Physical Constants
Appendix B: Selected Properties of Silicon
Appendix C: List of Symbols
KW - Green1982book
ER -
TY - ABST
T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon
Y1 - 1981
A1 - W R Thurber
A1 - Mattis
A1 - Liu
A1 - Filliben
PB - U.S. Department of Commerce National Bureau of Standards
N1 -
KW - Thurber1981
ER -
TY - JOUR
T1 - Solar cell fill factors: General graph and empirical expressions
JF - Solid-State Electronics
Y1 - 1981
A1 - Martin A Green
VL - 24
N1 -
KW - Green1981
ER -
TY - Generic
T1 - Flat-Plate Photovoltaic Array Design Optimization
T2 - 14th IEEE Photovoltaic Specialists Conference
Y1 - 1980
A1 - Ross, R.G.
JA - 14th IEEE Photovoltaic Specialists Conference
CY - San Diego, CA
N1 -
KW - Ross1980
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - boron
KW - electrical resistivity
KW - Hall effect
KW - hole density
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/2291/1
N1 -
KW - Thurber1980boron
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - density
KW - electrical resistivity
KW - electron mobility
KW - Hall effect
KW - neutron activation analysis
KW - phosphorus
KW - photometry
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/1807/1
KW - Thurber1980phos
ER -
TY - CHAP
T1 - Solar Energy Utilisation
Y1 - 1980
A1 - G.D. Rai
PB - Khanna Publishers
N1 -
KW - Rai1980
ER -
TY - JOUR
T1 - Application of the superposition principle to solar-cell analysis
JF - IEEE Transactions on Electron Devices
Y1 - 1979
A1 - F.A. Lindholm
A1 - Fossum, J.G.
A1 - E.L. Burgess
AB - The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).
VL - 26
KW - Lindholm1979
ER -
TY - JOUR
T1 - Solar Power for Telecommunications
JF - The Telecommunication Journal of Australia
Y1 - 1979
A1 - Mack, M.
VL - 29
N1 -
KW - Mack1979
ER -
TY - ABST
T1 - United States Patent: 4137123 - Texture etching of silicon: method
Y1 - 1979
A1 - William L. Bailey
A1 - Michael G. Coleman
A1 - Cynthia B. Harris
A1 - Israel A. Lesk
AB - A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123
KW - Bailey1979
ER -
TY - Generic
T1 - Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations
T2 - 13th IEEE Photovoltaic Specialists Conference
Y1 - 1978
A1 - H.B. Serreze
JA - 13th IEEE Photovoltaic Specialists Conference
CY - Washington, D.C., USA
N1 -
KW - Serreze1978
ER -
TY - JOUR
T1 - Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
JF - IEEE Transactions on Electron Devices
Y1 - 1977
A1 - Card, H.C.
A1 - Yang, E.S.
VL - ED-24
N1 -
KW - Card1977
ER -
TY - JOUR
T1 - Physical operation of back-surface-field silicon solar cells
JF - IEEE Transactions on Electron Devices
Y1 - 1977
A1 - Fossum, J.G.
AB - Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.
VL - 24
KW - Fossum1977
ER -
TY - BOOK
T1 - Applied Solar Energy
Y1 - 1976
A1 - Meinel, A.B.
A1 - Meinel, M.P.
PB - Addison Wesley Publishing Co.
N1 -
KW - Meinel1976
ER -
TY - Generic
T1 - Historical Development of Solar Cells
Y1 - 1976
A1 - M. Wolf
PB - IEEE Press
N1 -
KW - Wolf1976
ER -
TY - BOOK
T1 - Solar Cells
Y1 - 1976
A1 - C.E. Backus
AB - The present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells
PB - IEEE
CY - New York
N1 -
KW - Backus1976
ER -
TY - JOUR
T1 - Solar thermal power system based on optical transmission
JF - Solar Energy
Y1 - 1976
A1 - L.L. Vant-Hull
A1 - A.F. Hildebrandt
VL - 18
UR - http://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f89696498
N1 -
KW - VantHull1976
ER -
TY - Generic
T1 - Optimum Design of Anti-reflection coating for silicon solar cells
T2 - 10th IEEE Photovoltaic Specialists Conference
Y1 - 1973
A1 - E.Y. Wang
A1 - F.T.S. Yu
A1 - V.L. Sims
A1 - E.W. Brandhorst
A1 - J.D. Broder
JA - 10th IEEE Photovoltaic Specialists Conference
N1 -
KW - Wang1973
ER -
TY - JOUR
T1 - High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing
JF - Journal of Applied Physics
Y1 - 1971
A1 - Aven, M.
AB - Electron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.
VL - 42
CP - 3
J1 - J. Appl. Phys.
KW - 531
ER -
TY - JOUR
T1 - The measurement of solar spectral irradiance at different terrestrial elevations
JF - Solar Energy
Y1 - 1970
A1 - E.G. Laue
VL - 13
UR - http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a
N1 -
KW - Laue1970
ER -
TY - JOUR
T1 - The absorption of radiation in solar stills
JF - Solar Energy
Y1 - 1969
A1 - P.I. Cooper
VL - 12
UR - http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5
N1 -
KW - Cooper1969
ER -
TY - JOUR
T1 - Nondestructive determination of thickness and refractive index of transparent films
JF - IBM Journal of Research Devices
Y1 - 1964
A1 - W. A. Pliskin
A1 - E. E. Conrad
AB - A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
VL - 8
UR - http://portal.acm.org/citation.cfm?id=1662391
N1 -
KW - Pliskin1964
ER -
TY - JOUR
T1 - Series Resistance Effects on Solar Cell Measurements
JF - Advanced Energy Conversion
Y1 - 1963
A1 - M. Wolf
A1 - H. Rauschenbach
VL - 3
KW - Wolf1963
ER -
TY - JOUR
T1 - Detailed Balance Limit of Efficiency of p-n Junction Solar Cells
JF - Journal of Applied Physics
Y1 - 1961
A1 - William Shockley
A1 - Hans J. Queisser
PB - AIP
VL - 32
UR - http://link.aip.org/link/?JAP/32/510/1
KW - Shockley1961
ER -
TY - CONF
T1 - High efficiency silicon solar cells
T2 - Proceedings of the 14th Annual Power Sources Conference
Y1 - 1960
A1 - B. Dale
A1 - H.G. Rudenberg
JA - Proceedings of the 14th Annual Power Sources Conference
PB - U.S. Army Signal Research and Development Lab
N1 -
KW - Dale1960
ER -
TY - CHAP
T1 - Semiconductor Devices, Chapter 8
Y1 - 1959
A1 - J.N. Shive
PB - Van Nostrand
CY - New Jersey
N1 -
KW - Shive1959
ER -
TY - JOUR
T1 - Measurement of sheet resistivities with the four-point probe
JF - Bell System Technical Journal
Y1 - 1958
A1 - F.M. Smits
VL - 34
N1 -
KW - Smits1958
ER -
TY - JOUR
T1 - A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power
JF - Journal of Applied Physics
Y1 - 1954
A1 - Chapin, D.M.
A1 - Fuller, C.S.
A1 - Pearson, G.L.
VL - 25
N1 -
KW - Chapin1954
ER -
TY - JOUR
T1 - Electron-Hole Recombination in Germanium
JF - Phys. Rev.
Y1 - 1952
A1 - Hall, R. N.
PB - American Physical Society
VL - 87
N1 -
KW - Hall1952
ER -
TY - JOUR
T1 - Photoelectric Properties of Tonically Bombarded Silicon
JF - Bell Systems Technical Journal
Y1 - 1952
A1 - Kingsbury, E.F.
A1 - Ohl, R.S.
VL - 31
N1 -
KW - Kingsbury1952
ER -
TY - JOUR
T1 - Statistics of the Recombinations of Holes and Electrons
JF - Physical Review
Y1 - 1952
A1 - William Shockley
A1 - W. T. Read
AB - The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.
VL - 87
UR - http://link.aps.org/doi/10.1103/PhysRev.87.835
KW - Shockley1952
ER -
TY - JOUR
T1 - Zone-refining
JF - Trans. AIME,
Y1 - 1952
A1 - W. G. Pfann
VL - 194
N1 -
KW - Pfann1952
ER -
TY - BOOK
T1 - Electrons and holes in semiconductors with applications to transistor electronics
Y1 - 1950
A1 - William Shockley
PB - van Nostrand
CY - New York
KW - shockley1950
ER -
TY - JOUR
T1 - Light-Sensitive Electric Device
JF - U.S. Patent
Y1 - 1941
A1 - Ohl, R.S.
VL - 2
N1 -
KW - Ohl1941
ER -
TY - JOUR
T1 - A Thallous Sulphide Photo EMF Cell
JF - Journal Opt. Society of America
Y1 - 1939
A1 - Nix, F.C.
A1 - Treptwo, A.W.
VL - 29
N1 -
KW - Nix1939
ER -
TY - JOUR
T1 - Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen
JF - Annalen der Physik
Y1 - 1934
A1 - Bauer, Gerhard
VL - 411
CP - 4
J1 - Ann. Phys.
KW - Bauer1934
ER -
TY - JOUR
T1 - The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell
JF - Review of Modern Physics
Y1 - 1933
A1 - Grondahl, L.O.
VL - 5
N1 -
KW - Grondahl1933
ER -
TY - JOUR
T1 - Uber eine neue Selen- Sperrschicht Photozelle
JF - Physikalische Zeitschrift
Y1 - 1931
A1 - Bergmann, L.
VL - 32
N1 -
KW - Bergmann1931
ER -
TY - JOUR
T1 - Sur les rayons β secondaires produits dans un gaz par des rayons X
JF - C.R.A.S.
Y1 - 1923
A1 - P. Auger
VL - 177
N1 -
KW - Auger1923
ER -
TY - JOUR
T1 - Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle
JF - Zeitschrift für physikalische Chemie
Y1 - 1918
A1 - Czochralski, J.
VL - 92
KW - Czochralski1918
ER -
TY - JOUR
T1 - Generation and transformation of light
JF - Annalen der Physik
Y1 - 1905
A1 - A. Einstein
KW - Einstein1905
VL - 17
N1 -
KW - Einstein1905
ER -
TY - JOUR
T1 - Distribution of energy in the spectrum
JF - Annalen der Physik
Y1 - 1901
A1 - M. Planck
VL - 4
N1 -
KW - Planck1901
ER -
TY - JOUR
T1 - Distribution of energy in the normal spectrum
JF - Verhandlungen der Deutschen Physikalischen Gesellschaft
Y1 - 1900
A1 - M. Planck
VL - 2
N1 -
KW - Planck1900
ER -
TY - JOUR
T1 - On a New Form of Selenium Photocell
JF - American J. of Science
Y1 - 1883
A1 - Fritts, C.E.
VL - 26
N1 -
KW - Fritts1883
ER -
TY - JOUR
T1 - The Action of Light on Selenium
JF - Proceedings of the Royal Society, London
Y1 - 1877
A1 - Adams, W.G.
A1 - Day, R.E.
VL - A25
N1 -
KW - Adams1877
ER -
TY - JOUR
T1 - On Conductance in Metal Sulphides
JF - Ann. d. Physik
Y1 - 1874
A1 - Braun, F.
VL - 153
N1 -
KW - Braun1874
ER -
TY - JOUR
T1 - Memoire sur les effects d´electriques produits sous l´influence des rayons solaires
JF - Annalen der Physick und Chemie
Y1 - 1841
A1 - Becquerel, A.E.
VL - 54
N1 -
KW - Becquerel1841
ER -
TY - JOUR
T1 - Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques
JF - Comptes Rendus de L´Academie des Sciences
Y1 - 1839
A1 - Becquerel, A.E.
VL - 9
N1 -
KW - Becquerel1839
ER -