01812nas a2200181 4500008004100000022001400041245008400055210006900139260001600208490000700224520125700231100001901488700002201507700002001529700001701549700002001566856004401586 2012 eng d a1098-012100aImproved quantitative description of Auger recombination in crystalline silicon0 aImproved quantitative description of Auger recombination in crys cJan-10-20120 v863 aAn accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.1 aRichter, Armin1 aGlunz, Stefan, W.1 aWerner, Florian1 aSchmidt, Jan1 aCuevas, Andrés uhttps://www.pveducation.org/es/node/52500499nas a2200157 4500008004100000022001400041245006700055210006600122260001600188300001400204490000600218100002800224700002400252700002100276856004400297 2012 eng d a2156-338100aIsotextured Silicon Solar Cell Analysis and Modeling 1: Optics0 aIsotextured Silicon Solar Cell Analysis and Modeling 1 Optics cJan-10-2012 a457 - 4640 v21 aBaker-Finch, Simeon, C.1 aMcIntosh, Keith, R.1 aTerry, Mason, L. uhttps://www.pveducation.org/es/node/53301300nas a2200145 4500008004100000245009100041210006900132300001500201490000700216520074700223100002500970700001600995700001401011856012901025 2001 eng d00aImprovements in numerical modelling of highly injected crystalline silicon solar cells0 aImprovements in numerical modelling of highly injected crystalli a149-155(7)0 v653 a
We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
1 aAltermatt, Pietro, P1 aSinton, R A1 aHeiser, G uhttp://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-100361nas a2200097 4500008004100000245006900041210006300110100001800173700002800191856004400219 2000 eng d00aThe Influence of Edge Recombination on a Solar Cell’s IV Curve0 aInfluence of Edge Recombination on a Solar Cell s IV Curve1 aMcIntosh, K R1 aHonsberg, Christiana, B uhttps://www.pveducation.org/es/node/35100502nas a2200157 4500008004100000245008000041210006900121260002900190100001400219700001200233700001300245700001400258700001100272700001700283856004400300 1998 eng d00aImproved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells0 aImproved Performance of SelfAligned SelectiveEmitter Silicon Sol aVienna, Austriac07/19981 aRuby, D S1 aYang, P1 aZaidi, S1 aBrueck, S1 aRoy, M1 aNarayanan, S uhttps://www.pveducation.org/es/node/37400517nas a2200157 4500008004100000245009100041210006900132260002200201300001800223100001500241700001600256700001600272700001200288700001500300856004400315 1997 eng d00aIsotropic texturing of multicrystalline silicon wafers with acidic texturing solutions0 aIsotropic texturing of multicrystalline silicon wafers with acid aNew York, NY, USA a167-170, 14511 aEinhaus, R1 aVazsonyi, E1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/es/node/30400733nas a2200241 4500008004100000245008500041210006900126260000800195300001200203490000700215653002000222653002200242653002000264653002300284653002200307653002400329653001200353653001900365653002700384100001600411700002100427856004300448 1991 eng d00aImproved value for the silicon intrinsic carrier concentration from 275 to 375 K0 aImproved value for the silicon intrinsic carrier concentration f bAIP a846-8540 v7010aCARRIER DENSITY10aIV CHARACTERISTIC10aJUNCTION DIODES10aMEDIUM TEMPERATURE10aMINORITY CARRIERS10aSANDIA LABORATORIES10aSILICON10aSILICON DIODES10aTEMPERATURE DEPENDENCE1 aSproul, A B1 aGreen, Martin, A uhttp://link.aip.org/link/?JAP/70/846/100459nas a2200145 4500008004100000022001300041245008500054210006900139260000900208300000800217490000700225100001600232700002100248856004400269 1991 eng d a0021897900aImproved value for the silicon intrinsic carrier concentration from 275 to 375 K0 aImproved value for the silicon intrinsic carrier concentration f c1991 a8460 v701 aSproul, A B1 aGreen, Martin, A uhttps://www.pveducation.org/es/node/39000418nas a2200145 4500008004100000245005100041210005100092300001200143100001200155700001300167700001100180700002100191700001600212856004400228 1991 eng d00aImprovements in Silicon Solar Cell Performance0 aImprovements in Silicon Solar Cell Performance a399-4021 aZhao, J1 aA., Wang1 aDai, X1 aGreen, Martin, A1 aWenham, S R uhttps://www.pveducation.org/es/node/41500474nas a2200157 4500008004100000022001300041245007600054210006900130260000900199300000800208490000700216100001600223700002100239700001200260856004400272 1990 eng d a0003695100aImproved value for the silicon intrinsic carrier concentration at 300 K0 aImproved value for the silicon intrinsic carrier concentration a c1990 a2550 v571 aSproul, A B1 aGreen, Martin, A1 aZhao, J uhttps://www.pveducation.org/es/node/38900400nas a2200121 4500008004100000245006900041210006900110300001200179490001000191100001900201700001400220856004400234 1982 eng d00aIntensity Enhancement in Textured Optical Sheets for Solar Cells0 aIntensity Enhancement in Textured Optical Sheets for Solar Cells a300-3050 vED-291 aYablonovich, E1 aCody, G D uhttps://www.pveducation.org/es/node/412