01300nas a2200145 4500008004100000245009100041210006900132300001500201490000700216520074700223100002500970700001600995700001401011856012901025 2001 eng d00aImprovements in numerical modelling of highly injected crystalline silicon solar cells0 aImprovements in numerical modelling of highly injected crystalli a149-155(7)0 v653 a
We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
1 aAltermatt, Pietro, P1 aSinton, R A1 aHeiser, G uhttp://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-100444nas a2200121 4500008004100000245008500041210006900126260003100195300001600226100001600242700002000258856004400278 2000 eng d00aA Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization0 aQuasiSteadyState OpenCircuit Voltage Method for Solar Cell Chara aGlasgow, Scotlandc05/2000 a1152–11551 aSinton, R A1 aCuevas, Andrés uhttps://www.pveducation.org/es/node/38500406nas a2200145 4500008004100000022001400041245004500055210004500100260000800145300001600153490000700169100001600176700002400192856004400216 1987 eng d a0018-938300aRecombination in highly injected silicon0 aRecombination in highly injected silicon cjun a1380 - 13890 v341 aSinton, R A1 aSwanson, Richard, M uhttps://www.pveducation.org/es/node/384