00585nas a2200193 4500008004100000245004800041210004700089260002700136100002200163700002000185700002100205700001800226700001900244700001800263700002100281700002000302700002500322856004400347 2010 eng d00aGen III: Improved Performance at Lower Cost0 aGen III Improved Performance at Lower Cost aHonolulu, HawaiibIEEE1 aCousins, Peter, J1 aSmith, David, D1 aLuan, Hsin-Chiao1 aManning, Jane1 aDennis, Tim, D1 aWaldhaue, Ann1 aWilson, Karen, E1 aHarley, Gabriel1 aMulligan, William, P uhttps://www.pveducation.org/es/node/29702010nas a2200145 4500008004100000245010900041210006900150300001400219490000700233520152700240100001701767700001401784700002801798856003801826 2008 eng d00aAnalysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method0 aAnalysis of tandem solar cell efficiencies under AM15G spectrum a225–2330 v163 a
We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.
1 aBremner, S P1 aLevy, M Y1 aHonsberg, Christiana, B uhttp://dx.doi.org/10.1002/pip.79900449nas a2200121 4500008004100000245011000041210006900151300001400220490000700234100001400241700002800255856004400283 2006 eng d00aRapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications0 aRapid and precise calculations of energy and particle flux for d a1400-14050 v501 aLevy, M Y1 aHonsberg, Christiana, B uhttps://www.pveducation.org/es/node/34300489nas a2200133 4500008004100000020001800041245005300059210005300112260004800165300000900213100001300222700001500235856010500250 2003 eng d a0-471-49196-900aHandbook of Photovoltaic Science and Engineering0 aHandbook of Photovoltaic Science and Engineering aChichester, EnglandbJohn Wiley & Sons Ltd. a11171 aLuque, A1 aHegedus, S uhttp://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_700538nas a2200169 4500008004100000022001400041245003100055210003100086300001400117490000700131653001900138100002600157700003100183700003000214700002400244856010000268 2001 eng d a0038-092X00aComputing the solar vector0 aComputing the solar vector a431 - 4410 v7010aSolar tracking1 aBlanco-Muriel, Manuel1 aAlarcón-Padilla, Diego, C1 aLópez-Moratalla, Teodoro1 aLara-Coira, MartÍn uhttp://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de99300445nas a2200133 4500008004100000245007500041210006900116300001400185100001500199700001400214700002500228700001400253856004400267 2000 eng d00aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/es/node/29500533nas a2200157 4500008004100000020001800041245007500059210006900134260004600203300001400249100001500263700001400278700002500292700001400317856004400331 2000 eng d a978190291618700aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti aGlasgow UKbJames and Jamesc1-5 May 2000 a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/es/node/29600457nas a2200145 4500008004100000245007400041210006900115300001200184490000700196100001400203700001400217700001900231700001700250856004400267 1995 eng d00aOn some thermodynamic aspects of photovoltaic solar energy conversion0 asome thermodynamic aspects of photovoltaic solar energy conversi a201-2220 v361 aBaruch, P1 aDe Vos, A1 aLandsberg, P T1 aParrott, J E uhttps://www.pveducation.org/es/node/27900516nam a2200145 4500008004100000245006700041210006300108260005500171100002300226700002100249700001200270700001600282700001500298856005700313 1991 eng d00aThe Role of Photovoltaics in Reducing Greenhouse Gas Emissions0 aRole of Photovoltaics in Reducing Greenhouse Gas Emissions aCanberrabAustralian Government Publishing Service1 aBlakers, Andrew, W1 aGreen, Martin, A1 aLeo, T.1 aOuthred, H.1 aRobins, B. uhttps://www.pveducation.org/es/reference/blakers199100803nas a2200253 4500008004100000245013700041210006900178260000800247300001400255490000700269653002100276653002700297653002200324653001800346653001200364653002400376653002300400653002100423653001300444653001100457100001900468700001800487856004400505 1987 eng d00aAnalysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity0 aAnalysis of the interaction of a laser pulse with a silicon wafe bAIP a2282-22930 v6110acarrier lifetime10aLASERRADIATION HEATING10aMINORITY CARRIERS10aRECOMBINATION10aSILICON10aSILICON SOLAR CELLS10aSURFACE PROPERTIES10aTHEORETICAL DATA10aVELOCITY10aWAFERS1 aLuke, Keung, L1 aCheng, Li-Jen uhttp://link.aip.org/link/?JAP/61/2282/100499nas a2200133 4500008004100000245010000041210006900141260006100210100001800271700001100289700000800300700001300308856004400321 1981 eng d00aThe Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon0 aRelationship Between Resistivity and Dopant Density for Phosphor bU.S. Department of Commerce National Bureau of Standards1 aThurber, W, R1 aMattis1 aLiu1 aFilliben uhttps://www.pveducation.org/es/node/39600652nas a2200229 4500008004100000245006800041210006600109260000800175300001400183490000800197653001000205653002700215653001600242653001700258653002500275653001200300100001800312700001600330700001300346700001800359856004500377 1980 eng d00aResistivity-Dopant Density Relationship for Boron-Doped Silicon0 aResistivityDopant Density Relationship for BoronDoped Silicon bECS a2291-22940 v12710aboron10aelectrical resistivity10aHall effect10ahole density10asemiconductor doping10aSILICON1 aThurber, W, R1 aMattis, R L1 aLiu, Y M1 aFilliben, J J uhttp://link.aip.org/link/?JES/127/2291/100765nas a2200265 4500008004100000245007300041210006900114260000800183300001400191490000800205653001200213653002700225653002200252653001600274653003200290653001500322653001500337653002500352653001200377100001800389700001600407700001300423700001800436856004500454 1980 eng d00aResistivity-Dopant Density Relationship for Phosphorus-Doped Silicon0 aResistivityDopant Density Relationship for PhosphorusDoped Silic bECS a1807-18120 v12710adensity10aelectrical resistivity10aelectron mobility10aHall effect10aneutron activation analysis10aphosphorus10aphotometry10asemiconductor doping10aSILICON1 aThurber, W, R1 aMattis, R L1 aLiu, Y M1 aFilliben, J J uhttp://link.aip.org/link/?JES/127/1807/101923nas a2200157 4500008004100000022001400041245007000055210006900125300001400194490000700208520145500215100001801670700001601688700001701704856004401721 1979 eng d a0018-938300aApplication of the superposition principle to solar-cell analysis0 aApplication of the superposition principle to solarcell analysis a165–1710 v263 aThe principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).1 aLindholm, F A1 aFossum, J G1 aBurgess, E L uhttps://www.pveducation.org/es/node/34400872nas a2200133 4500008004100000245007100041210006700112520028800179100002300467700002400490700002300514700002000537856018100557 1979 eng d00aUnited States Patent: 4137123 - Texture etching of silicon: method0 aUnited States Patent 4137123 Texture etching of silicon method3 aA surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
1 aBailey, William, L1 aColeman, Michael, G1 aHarris, Cynthia, B1 aLesk, Israel, A uhttp://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,12300480nas a2200121 4500008004100000022001400041245008500055210006900140300002800209490000700237100001400244856010000258 1970 eng d a0038-092X00aThe measurement of solar spectral irradiance at different terrestrial elevations0 ameasurement of solar spectral irradiance at different terrestria a43 - 50, IN1-IN4, 51-570 v131 aLaue, E G uhttp://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a