@article {Sproul1994,
title = {Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors},
journal = {Journal of Applied Physics},
volume = {76},
number = {5},
year = {1994},
pages = {2851-2854},
publisher = {AIP},
keywords = {ANALYTICAL SOLUTION, carrier lifetime, DECAY, MINORITY CARRIERS, RECOMBINATION, SEMICONDUCTOR MATERIALS, SURFACES},
doi = {10.1063/1.357521},
url = {http://link.aip.org/link/?JAP/76/2851/1},
author = {A. B. Sproul}
}
@article {Sproul1991,
title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K},
journal = {Journal of Applied Physics},
volume = {70},
number = {2},
year = {1991},
note = {
},
pages = {846-854},
publisher = {AIP},
keywords = {CARRIER DENSITY, IV CHARACTERISTIC, JUNCTION DIODES, MEDIUM TEMPERATURE, MINORITY CARRIERS, SANDIA LABORATORIES, SILICON, SILICON DIODES, TEMPERATURE DEPENDENCE},
doi = {10.1063/1.349645},
url = {http://link.aip.org/link/?JAP/70/846/1},
author = {A. B. Sproul and Martin A Green}
}
@article {Sproul1991,
title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K},
journal = {Journal of Applied Physics},
volume = {70},
year = {1991},
note = {
},
month = {1991},
pages = {846},
issn = {00218979},
doi = {10.1063/1.349645},
author = {A. B. Sproul and Martin A Green}
}
@proceedings {Narayanan1990,
title = {18\% efficient polycrystalline silicon solar cells},
volume = {1},
year = {1990},
note = {
},
pages = {678-680},
author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green}
}
@article {Sproul1990,
title = {Improved value for the silicon intrinsic carrier concentration at 300 K},
journal = {Applied Physics Letters},
volume = {57},
year = {1990},
note = {
},
month = {1990},
pages = {255},
issn = {00036951},
doi = {10.1063/1.103707},
author = {A. B. Sproul and Martin A Green and Zhao, J.}
}