@article {Hanasoge2012, title = {From the Cover: Anomalously weak solar convection}, journal = {Proceedings of the National Academy of Sciences}, volume = {109}, year = {2012}, month = {Dec-07-2013}, pages = {11928 - 11932}, abstract = {Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree l. Within the wavenumber band l < 60, convective velocities are 20{\textendash}100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers l < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. }, issn = {0027-8424}, doi = {10.1073/pnas.1206570109}, author = {Hanasoge, S. M. and Duvall, T. L. and Sreenivasan, K. R.} } @article {Richter2012, title = {Improved quantitative description of Auger recombination in crystalline silicon}, journal = {Physical Review B}, volume = {86}, year = {2012}, month = {Jan-10-2012}, abstract = {An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.}, issn = {1098-0121}, doi = {10.1103/PhysRevB.86.165202}, author = {Richter, Armin and Stefan W. Glunz and Werner, Florian and Jan Schmidt and Andr{\'e}s Cuevas} } @conference {Cousins2010, title = {Gen III: Improved Performance at Lower Cost}, booktitle = {35th IEEE Photovoltaic Specialists Conference}, year = {2010}, note = {
}, publisher = {IEEE}, organization = {IEEE}, address = {Honolulu, Hawaii}, author = {Peter J. Cousins and David D. Smith and Hsin-Chiao Luan and Jane Manning and Tim D. Dennis and Ann Waldhaue and Karen E. Wilson and Gabriel Harley and William P. Mulligan} } @proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @proceedings {Dimroth2009, title = {METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 \% EFFICIENCY}, year = {2009}, note = {
}, author = {F. Dimroth and W. Guter and J. Sch{\"o}ne and E. Welser and M. Steiner and E. Oliva and A. Wekkeli and G. Siefer and S.P. Philipps and A.W. Bett} } @book {Schroder2006, title = {Semiconductor material and device characterization}, year = {2006}, publisher = {IEEE Press; Wiley}, organization = {IEEE Press; Wiley}, edition = {3rd edition}, address = {Piscataway NJ; Hoboken N.J.}, isbn = {9780471739067}, author = {Dieter Schroder} } @proceedings {Swanson2005, title = {Approaching the 29\% limit efficiency of silicon solar cells}, year = {2005}, note = {
}, pages = {889-94}, publisher = {01/2005}, address = {Lake buena Vista, FL, USA}, author = {Richard M Swanson} } @article {Bothe2005, title = {Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {13}, year = {2005}, note = {
}, month = {06/2005}, pages = {287 - 296}, issn = {1099-159X}, doi = {10.1002/pip.586}, author = {Bothe, Karsten and Sinton, Ron and Jan Schmidt} } @article {Henrie2004, title = {Electronic color charts for dielectric films on silicon}, journal = {Optics Express}, volume = {12}, number = {7}, year = {2004}, note = {
}, pages = {1464{\textendash}1469}, abstract = {

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

}, keywords = {Color, measurement, optical properties, Thin films}, doi = {10.1364/OPEX.12.001464}, url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464}, author = {Justin Henrie and Spencer Kellis and Stephen Schultz and Aaron Hawkins} } @article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @article {Kerr2002, title = {Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements}, journal = {Journal of Applied Physics}, volume = {91}, year = {2002}, note = {
}, month = {2002}, pages = {399}, abstract = {The current{\textendash}voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.}, issn = {00218979}, doi = {10.1063/1.1416134}, author = {Mark J Kerr and Andr{\'e}s Cuevas and Ronald A. Sinton} } @article {Altermatt2001, title = {Improvements in numerical modelling of highly injected crystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, pages = {149-155(7)}, abstract = {

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

}, url = {http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1}, author = {Pietro P Altermatt and Sinton, R.A. and G. Heiser} } @article {Macdonald2001, title = {On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon}, journal = {Journal of Applied Physics}, volume = {89}, number = {5}, year = {2001}, pages = {2772-2778}, publisher = {AIP}, keywords = {CARRIER DENSITY, carrier lifetime, electron traps, electron-hole recombination, elemental semiconductors, hole traps, photoconductivity, SILICON, solar cells}, doi = {10.1063/1.1346652}, url = {http://link.aip.org/link/?JAP/89/2772/1}, author = {Daniel Macdonald and Ronald A. Sinton and Andr{\'e}s Cuevas} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @conference {Sinton2000, title = {A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization}, booktitle = {16th European Photovoltaic Solar Energy Conference}, year = {2000}, month = {05/2000}, pages = {1152{\textendash}1155}, address = {Glasgow, Scotland}, author = {Sinton, R.A. and Andr{\'e}s Cuevas} } @book {Streetman2001, title = {Solid State Electronic Devices}, year = {2000}, note = {
}, publisher = {Prentice Hall}, organization = {Prentice Hall}, author = {Ben G. Streetman} } @proceedings {Einhaus1997, title = {Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions}, year = {1997}, note = {
}, pages = {167-170, 1451}, address = {New York, NY, USA}, author = {Einhaus, R. and Vazsonyi, E. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @proceedings {Szlufcik1997, title = {Low-cost industrial technologies of crystalline silicon solar cells}, volume = {85}, year = {1997}, note = {
}, pages = {711-730}, author = {Szlufcik, J. and Sivoththaman, S. and Nlis, J.F. and Mertens, R.P. and Van-Overstraeten, R.} } @article {Chandramohan1997, title = {Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications}, journal = {physica status solidi (a)}, volume = {163}, year = {1997}, month = {Jan-10-1997}, pages = {R11 - R12}, issn = {00318965}, doi = {10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3}, author = {Chandramohan, R. and Sanjeeviraja, C. and Mahalingam, T.} } @proceedings {Horzel1997, title = {A simple processing sequence for selective emitters}, year = {1997}, note = {
}, pages = {139-142}, address = {New York, NY, USA}, author = {Horzel, J. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @proceedings {Fukui1997, title = {Surface texturing using reactive ion etching for multicrystalline silicon solar cells}, year = {1997}, note = {
}, pages = {1451, 47-50}, address = {New York, NY, USA}, author = {Fukui, K. and Inomata, Y. and Shirasawa, K.} } @article {Sinton1996, title = {Contactless determination of current{\textendash}voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data}, journal = {Applied Physics Letters}, volume = {69}, number = {17}, year = {1996}, pages = {2510-2512}, publisher = {AIP}, keywords = {carrier lifetime, CV CHARACTERISTIC, MINORITY CARRIERS, photoconductivity, SEMICONDUCTOR MATERIALS, SILICON, STEADY {\textendash} STATE CONDITIONS}, doi = {10.1063/1.117723}, url = {http://link.aip.org/link/?APL/69/2510/1}, author = {Ronald A. Sinton and Andr{\'e}s Cuevas} } @article {Stocks1996, title = {Texturing of polycrystalline silicon}, journal = {Solar Energy Materials and Solar Cells}, volume = {40}, number = {1}, year = {1996}, pages = {33 - 42}, issn = {0927-0248}, doi = {DOI: 10.1016/0927-0248(95)00077-1}, url = {http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541}, author = {M. J. Stocks and A. J. Carr and Andrew W Blakers} } @article {Verlinden1994, title = {7000 High Efficiency Cells for a Dream}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {143 - 152}, author = {Verlinden, P.J. and Richard M Swanson and Crane, R.A.} } @article {Sproul1994, title = {Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors}, journal = {Journal of Applied Physics}, volume = {76}, number = {5}, year = {1994}, pages = {2851-2854}, publisher = {AIP}, keywords = {ANALYTICAL SOLUTION, carrier lifetime, DECAY, MINORITY CARRIERS, RECOMBINATION, SEMICONDUCTOR MATERIALS, SURFACES}, doi = {10.1063/1.357521}, url = {http://link.aip.org/link/?JAP/76/2851/1}, author = {A. B. Sproul} } @proceedings {Wenger1991, title = {Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates}, year = {1991}, note = {
}, pages = {586-592}, address = {Las Vegas, USA}, author = {Wenger, H.J. and Schaefer, J. and Rosenthal, A. and Hammond, B. and Schlueter, L.} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, year = {1991}, note = {
}, month = {1991}, pages = {846}, issn = {00218979}, doi = {10.1063/1.349645}, author = {A. B. Sproul and Martin A Green} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, number = {2}, year = {1991}, note = {
}, pages = {846-854}, publisher = {AIP}, keywords = {CARRIER DENSITY, IV CHARACTERISTIC, JUNCTION DIODES, MEDIUM TEMPERATURE, MINORITY CARRIERS, SANDIA LABORATORIES, SILICON, SILICON DIODES, TEMPERATURE DEPENDENCE}, doi = {10.1063/1.349645}, url = {http://link.aip.org/link/?JAP/70/846/1}, author = {A. B. Sproul and Martin A Green} } @proceedings {Narayanan1990, title = {18\% efficient polycrystalline silicon solar cells}, volume = {1}, year = {1990}, note = {
}, pages = {678-680}, author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green} } @article {Sproul1990, title = {Improved value for the silicon intrinsic carrier concentration at 300 K}, journal = {Applied Physics Letters}, volume = {57}, year = {1990}, note = {
}, month = {1990}, pages = {255}, issn = {00036951}, doi = {10.1063/1.103707}, author = {A. B. Sproul and Martin A Green and Zhao, J.} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271 - 289}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271{\textendash}289}, abstract = {

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

}, issn = {{0038-092X}}, doi = {10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {Sinton1987, title = {Recombination in highly injected silicon}, journal = {Electron Devices, IEEE Transactions on}, volume = {34}, number = {6}, year = {1987}, note = {
}, month = {jun}, pages = {1380 - 1389}, issn = {0018-9383}, author = {Sinton, R.A. and Richard M Swanson} } @article {Ross1986, title = {Flat-Plate Solar Array Project Final Report}, year = {1986}, note = {
}, pages = {86-31}, publisher = {Jet Propulsion Laboratory}, author = {Ross, R.G. Jnr. and Smokler, M.I.} } @article {Eades1985, title = {Calculation of surface generation and recombination velocities at the Si-SiO2 interface}, journal = {Journal of Applied Physics}, volume = {58}, year = {1985}, note = {
}, month = {1985}, pages = {4267}, issn = {00218979}, doi = {10.1063/1.335562}, author = {Eades, Wendell D. and Richard M Swanson} } @book {Sekuler1985, title = {Perception}, year = {1985}, note = {
}, publisher = {Alfred A. Knopf Inc}, organization = {Alfred A. Knopf Inc}, address = {New York}, author = {Sekuler, R. and Blake, R.} } @book {seri1984, title = {Photovoltaics for Residential Applications}, year = {1984}, note = {
}, publisher = {Solar Energy Research Institute}, organization = {Solar Energy Research Institute}, address = {Golden, Colorado}, author = {SERI} } @article {Masetti1983, title = {Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-30}, number = {7}, year = {1983}, note = {

Copyright 1983, {IEE}

}, pages = {764{\textendash}9}, abstract = {

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

}, keywords = {arsenic, boron, CARRIER DENSITY, carrier mobility, digital simulation, elemental semiconductors, heavily doped semiconductors, phosphorus, SILICON}, issn = {0018-9383}, author = {G. Masetti and M. Severi and S. Solmi} } @article {Hu1983-2, title = {On Phosphorus Diffusion in Silicon}, journal = {On Phosphorus Diffusion in Silicon}, volume = {54}, year = {1983}, note = {
}, pages = {6912-6922}, author = {S.M. Hu and P. Fahey and P. Sutton} } @proceedings {Serreze1978, title = {Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations}, year = {1978}, note = {
}, pages = {1-8}, address = {Washington, D.C., USA}, author = {H.B. Serreze} } @proceedings {Wang1973, title = {Optimum Design of Anti-reflection coating for silicon solar cells}, year = {1973}, note = {
}, pages = {168-171}, author = {E.Y. Wang and F.T.S. Yu and V.L. Sims and E.W. Brandhorst and J.D. Broder} } @article {Shockley1961, title = {Detailed Balance Limit of Efficiency of p-n Junction Solar Cells}, journal = {Journal of Applied Physics}, volume = {32}, number = {3}, year = {1961}, pages = {510-519}, publisher = {AIP}, doi = {10.1063/1.1736034}, url = {http://link.aip.org/link/?JAP/32/510/1}, author = {William Shockley and Hans J. Queisser} } @inbook {Shive1959, title = {Semiconductor Devices, Chapter 8}, year = {1959}, note = {
}, publisher = {Van Nostrand}, organization = {Van Nostrand}, address = {New Jersey}, author = {J.N. Shive} } @article {Smits1958, title = {Measurement of sheet resistivities with the four-point probe}, journal = {Bell System Technical Journal}, volume = {34}, year = {1958}, note = {
}, month = {May 1958}, pages = {711-718}, author = {F.M. Smits} } @article {Shockley1952, title = {Statistics of the Recombinations of Holes and Electrons}, journal = {Physical Review}, volume = {87}, number = {5}, year = {1952}, pages = {835}, abstract = {The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.}, doi = {10.1103/PhysRev.87.835}, url = {http://link.aps.org/doi/10.1103/PhysRev.87.835}, author = {William Shockley and W. T. Read} } @book {shockley1950, title = {Electrons and holes in semiconductors with applications to transistor electronics}, year = {1950}, publisher = {van Nostrand}, organization = {van Nostrand}, address = {New York}, author = {William Shockley} }