@proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @article {Fuyuki2005, title = {Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence}, journal = {Applied Physics Letters}, volume = {86}, number = {26}, year = {2005}, pages = {262108}, publisher = {AIP}, keywords = {carrier lifetime, electroluminescence, elemental semiconductors, MINORITY CARRIERS, SILICON, solar cells}, doi = {10.1063/1.1978979}, url = {http://link.aip.org/link/?APL/86/262108/1}, author = {Takashi Fuyuki and Hayato Kondo and Tsutomu Yamazaki and Yu Takahashi and Yukiharu Uraoka} } @article {Henrie2004, title = {Electronic color charts for dielectric films on silicon}, journal = {Optics Express}, volume = {12}, number = {7}, year = {2004}, note = {
}, pages = {1464{\textendash}1469}, abstract = {

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

}, keywords = {Color, measurement, optical properties, Thin films}, doi = {10.1364/OPEX.12.001464}, url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464}, author = {Justin Henrie and Spencer Kellis and Stephen Schultz and Aaron Hawkins} } @article {Kerr2002, title = {General parameterization of Auger recombination in crystalline silicon}, journal = {Journal of Applied Physics}, volume = {91}, number = {4}, year = {2002}, pages = {2473-2480}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, SILICON}, doi = {10.1063/1.1432476}, url = {http://link.aip.org/link/?JAP/91/2473/1}, author = {Mark J Kerr and Andr{\'e}s Cuevas} } @article {Kerr2002, title = {Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements}, journal = {Journal of Applied Physics}, volume = {91}, year = {2002}, note = {
}, month = {2002}, pages = {399}, abstract = {The current{\textendash}voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.}, issn = {00218979}, doi = {10.1063/1.1416134}, author = {Mark J Kerr and Andr{\'e}s Cuevas and Ronald A. Sinton} } @article {Glunz2001, title = {Degradation of carrier lifetime in Cz silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, number = {1-4}, year = {2001}, note = {
}, pages = {219 - 229}, keywords = {Defects}, issn = {0927-0248}, doi = {DOI: 10.1016/S0927-0248(00)00098-2}, url = {http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f}, author = {Stefan W. Glunz and S. Rein and W. Warta and J. Knobloch and W. Wettling} } @proceedings {Keogh2001, title = {Natural Sunlight Calibration of Silicon Solar Cells.}, year = {2001}, note = {
}, address = {Munich, Germany}, author = {W. Keogh and Andrew W Blakers} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @article {Green1995, title = {Optical properties of intrinsic silicon at 300 K}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {3}, year = {1995}, note = {
}, month = {1995}, pages = {189 - 192}, issn = {1099159X}, doi = {10.1002/pip.4670030303}, author = {Martin A Green and Keevers, Mark J.} } @article {Kerr1995, title = {Sun{\textquoteright}s Role in Warming Is Discounted}, journal = {Science}, volume = {268}, year = {1995}, note = {
}, month = {04/1995}, pages = {28 - 29}, issn = {1095-9203}, doi = {10.1126/science.268.5207.28}, author = {Kerr, R. A.} } @proceedings {King1991, title = {A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources}, year = {1991}, note = {
}, author = {King, D. and Hansen, B.} } @article {Kasten89, title = {Revised optical air mass tables and approximation formula}, journal = {Applied Optics}, volume = {28}, number = {22}, year = {1989}, note = {
}, month = {11/1989}, pages = {4735{\textendash}4738}, publisher = {OSA}, doi = {10.1364/AO.28.004735}, url = {http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735}, author = {Fritz Kasten and Andrew T. Young} } @article {Kingsbury1952, title = {Photoelectric Properties of Tonically Bombarded Silicon}, journal = {Bell Systems Technical Journal}, volume = {31}, year = {1952}, note = {
}, pages = {802-815}, author = {Kingsbury, E.F. and Ohl, R.S.} }