@article {Katagiri1997, title = {Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors}, journal = {Solar Energy Materials and Solar Cells}, volume = {49}, year = {1997}, pages = {407 - 414}, abstract = {By sulfurization of EB evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 104cm-1. The resistivity was in the the order of 104 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/S0927-0248(97)00119-0}, url = {http://www.sciencedirect.com/science/article/pii/S0927024897001190} }