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I0 - one side

I0=qADni2LND

where:
q is the electronic charge given in the constants page;
A is the area;
D is the diffusivity of the minority carrier given for silicon as a function of doping in the Silicon Material Parameters page;
L is the minority carrier diffusion length;
ND is the doping; and
ni is the intrinsic carrier concentration given for silicon in the Silicon Material Parameters page.