Biblio

Export 293 results:
Author Title [ Type(Asc)] Year
Website
U. S. Naval Observatory, “The Astronomical Almanac”. 2020.
Web service
“TITANIUM(IV) SULFIDE CAS No. 12039-13-3”. .
J. R. Ralph, “Bismuthinite”. 2003.
Web project page
D. Barthelmy, “Tenorite Mineral Data”. 2009.
Web Article
C. Smith and Barron, A., “Synthesis and Purification of Bulk Semiconductors”, 2012. [Online]. Available: http://cnx.org/content/m23936/1.7/.
I. Astronomic Union, “Measuring the Universe”, 2012. .
Thesis
K. Ghosh, “Heterojunction and Nanostructured Photovoltaic Device: Theory and Experiment”, Arizona State University, 2011.
K. K. Anwar, “Aluminium Back Surface Field in Buried Contact Solar Cells”, University of New South Wales, 2000.
Report
“Silicon and Ferrosilicon: Global Industry Markets and Outlook, 13th edition”, Roskill, London, 2011.
Miscellaneous
W. L. Bailey, Coleman, M. G., Harris, C. B., and Lesk, I. A., “United States Patent: 4137123 - Texture etching of silicon: method”. 1979.
“Test Method for Determination of the Spectral Mismatch Parameter Between a Photovoltaic Device and a Photovoltaic Reference Cell”. 2016.
W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.
S. R. Wenham and Green, M. A., “Buried contact solar cell”. 1988.
“Bell Laboratories Record”. 1955.
Journal Article
W. G. Pfann, “Zone-refining”, Trans. AIME, vol. 194, 1952.
A. Rumberg, Sommerhalter, C., Toplak, M., Jäger-Waldau, A., and Lux-Steiner, M. C., “ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells”, Thin Solid Films, vol. 361-362, pp. 172 - 176, 2000.
D. Macdonald, Sinton, R. A., and Cuevas, A., “On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon”, Journal of Applied Physics, vol. 89, pp. 2772-2778, 2001.
L. Bergmann, “Uber eine neue Selen- Sperrschicht Photozelle”, Physikalische Zeitschrift, vol. 32, p. 286, 1931.
F. Hong, Lin, W., Meng, W., and Yan, Y., “Trigonal Cu 2 -II-Sn-VI 4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics”, Phys. Chem. Chem. Phys., vol. 18, no. 6, pp. 4828 - 4834, 2016.
S. Pizzini, “Towards solar grade silicon: Challenges and benefits for low cost photovoltaics”, Solar Energy Materials and Solar Cells, vol. 94, no. 9, pp. 1528 - 1533, 2010.
J. -ichi Tani and Kido, H., “Thermoelectric properties of Bi-doped Mg2Si semiconductors”, Physica B: Condensed Matter, vol. 364, no. 1-4, pp. 218 - 224, 2005.
W. Shockley, “The theory of p-n Junctions in semiconductors and p-n junction transistors”, Bell System Technical Journal, vol. 28, no. 3, pp. 435 - 489, 1949.
P. Zwolenski, Tobola, J., and Kaprzyk, S., “A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials”, Journal of Electronic Materials, vol. 40, no. 5, pp. 889 - 897, 2011.
F. C. Nix and Treptwo, A. W., “A Thallous Sulphide Photo EMF Cell”, Journal Opt. Society of America, vol. 29, p. 457, 1939.
M. J. Stocks, Carr, A. J., and Blakers, A. W., “Texturing of polycrystalline silicon”, Solar Energy Materials and Solar Cells, vol. 40, pp. 33 - 42, 1996.

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