Biblio

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Miscellaneous
W. L. Bailey, Coleman, M. G., Harris, C. B., and Lesk, I. A., “United States Patent: 4137123 - Texture etching of silicon: method”. 1979.
W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.
Journal Article
A. Rumberg, Sommerhalter, C., Toplak, M., Jäger-Waldau, A., and Lux-Steiner, M. C., “ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells”, Thin Solid Films, vol. 361-362, pp. 172 - 176, 2000.
F. Hong, Lin, W., Meng, W., and Yan, Y., “Trigonal Cu 2 -II-Sn-VI 4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics”, Phys. Chem. Chem. Phys., vol. 18, no. 6, pp. 4828 - 4834, 2016.
P. Baruch, De Vos, A., Landsberg, P. T., and Parrott, J. E., “On some thermodynamic aspects of photovoltaic solar energy conversion”, Solar Energy Materials and Solar Cells, vol. 36, pp. 201-222, 1995.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
M. Y. Levy and Honsberg, C. B., “Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications”, Solid-State Electronics, vol. 50, pp. 1400-1405, 2006.
T. Feurer et al., “Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications”, Progress in Photovoltaics: Research and Applications, vol. 25, pp. 645–667, 2017.
C. D. Lokhande et al., “Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films”, Thin Solid Films, vol. 330, no. 2, pp. 70 - 75, 1998.
R. S. Mane, Sankapal, B. R., and Lokhande, C. D., “Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films”, Materials Chemistry and Physics, vol. 60, no. 2, pp. 196 - 203, 1999.
R. H. Bube and Lind, E. L., “Photoconductivity of Zinc Selenide Crystals and a Correlation of Donor and Acceptor Levels in II-VI Photoconductors”, Phys. Rev., vol. 110, pp. 1040–1049, 1958.
K. Sun et al., “Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer”, Advanced Energy Materials, vol. 6, no. 12, p. 1600046, 2016.
E. G. Laue, “The measurement of solar spectral irradiance at different terrestrial elevations”, Solar Energy, vol. 13, pp. 43 - 50, IN1-IN4, 51-57, 1970.
R. B. Kale and Lokhande, C. D., “Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites”, Applied Surface Science, vol. 223, no. 4, pp. 343 - 351, 2004.
A. Luque and Hegedus, S., “Handbook of Photovoltaic Science and Engineering”, p. 1117, 2003.
E. M. Logothetis, Kaiser, W. J., Kukkonen, C. A., Faile, S. P., Colella, R., and Gambold, J., “Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor”, Journal of Physics C: Solid State Physics, vol. 12, no. 13, pp. L521 - L526, 1979.
E. M. Logothetis, Kaiser, W. J., Kukkonen, C. A., Faile, S. P., Colella, R., and Gambold, J., “Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor”, Journal of Physics C: Solid State Physics, vol. 12, p. L521, 1979.
O. Benhelal, Chahed, A., Laksari, S., Abbar, B., Bouhafs, B., and Aourag, H., “First-principles calculations of the structural, electronic and optical properties of IIA-IV antifluorite compounds”, physica status solidi (b), vol. 242, no. 10, pp. 2022 - 2032, 2005.
Y. - F. Lim, Choi, J. J., and Hanrath, T., “Facile Synthesis of Colloidal CuO Nanocrystals for Light-Harvesting Applications”, Journal of Nanomaterials, vol. 20123312825910287, no. 710315291, pp. 1 - 6, 2012.
B. Liu et al., “Electronic structure of TiS2 and its electric transport properties under high pressure”, Journal of Applied Physics, vol. 109, no. 5, p. 053717, 2011.
B. Liu et al., “Electronic structure of TiS2 and its electric transport properties under high pressure”, Journal of Applied Physics, vol. 109, no. 5, p. 053717, 2011.
S. Lehner, Ciobanu, M., Savage, K., and Cliffel, D. E., “Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni”, Journal of The Electrochemical Society, vol. 155, no. 5, p. P61, 2008.
P. Jackson, Wuerz, R., Hariskos, D., Lotter, E., Witte, W., and Powalla, M., “Effects of heavy alkali elements in Cu (In, Ga) Se2 solar cells with efficiencies up to 22.6%”, physica status solidi (RRL)–Rapid Research Letters, vol. 10, pp. 583–586, 2016.
Y. M. Yang, Yu, A., Hsu, B., Hsu, W. C., Yang, A., and Lan, C. W., “Development of high-performance multicrystalline silicon for photovoltaic industry”, Progress in Photovoltaics: Research and Applications, vol. 23, no. 3, pp. 340 - 351, 2015.

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