Biblio

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Author Title [ Type(Desc)] Year
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Book
R. P. Feynman, QED : The Strange Theory of Light and Matter. 1985.
Conference Paper
T. Magorian Friedlmeier, Wieser, N., Walter, T., Dittrich, H., and Schock, H. W., “Heterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films”, in 14th European PVSEC, 1997.
Conference Proceedings
K. Fukui, Inomata, Y., and Shirasawa, K., “Surface texturing using reactive ion etching for multicrystalline silicon solar cells”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 1451, 47-50, 1997.
Journal Article
J. Zhao, Wang, A., Green, M. A., and Ferrazza, F., “19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells”, Applied Physics Letters, vol. 73, pp. 1991-1993, 1998.
F. A. Lindholm, Fossum, J. G., and Burgess, E. L., “Application of the superposition principle to solar-cell analysis”, IEEE Transactions on Electron Devices, vol. 26, pp. 165–171, 1979.
F. Vazquez, Forman, R., and Cardona, M., “Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn”, Physical Review, vol. 176, no. 3, pp. 905 - 908, 1968.
E. M. Logothetis, Kaiser, W. J., Kukkonen, C. A., Faile, S. P., Colella, R., and Gambold, J., “Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor”, Journal of Physics C: Solid State Physics, vol. 12, p. L521, 1979.
E. M. Logothetis, Kaiser, W. J., Kukkonen, C. A., Faile, S. P., Colella, R., and Gambold, J., “Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor”, Journal of Physics C: Solid State Physics, vol. 12, no. 13, pp. L521 - L526, 1979.
C. E. Fritts, “On a New Form of Selenium Photocell”, American J. of Science, vol. 26, p. 465, 1883.
D. M. Chapin, Fuller, C. S., and Pearson, G. L., “A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power”, Journal of Applied Physics, vol. 25, pp. 676-677, 1954.
S. M. Hu, Fahey, P., and Sutton, P., “On Phosphorus Diffusion in Silicon”, On Phosphorus Diffusion in Silicon, vol. 54, pp. 6912-6922, 1983.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., and Uraoka, Y., “Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence”, Applied Physics Letters, vol. 86, p. 262108, 2005.
J. G. Fossum, “Physical operation of back-surface-field silicon solar cells”, IEEE Transactions on Electron Devices, vol. 24, pp. 322 - 325, 1977.
T. Feurer et al., “Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications”, Progress in Photovoltaics: Research and Applications, vol. 25, pp. 645–667, 2017.
T. Feurer et al., “Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications”, Progress in Photovoltaics: Research and Applications, vol. 25, pp. 645–667, 2017.
S. Furuseth, Kjekshus, A., Niklasson, R. J. V., Brunvoll, J., and Hinton, M., “On the Properties of alpha-MnS and MnS2.”, Acta Chemica Scandinavica, vol. 19, pp. 1405 - 1410, 1965.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.
S. J. Fonash, “Solar Cell Device Physics”, p. 400, 2010.
delas C Heras, Ferrer, I. J., and Sanchez, C., “Temperature dependence of the optical absorption edge of pyrite FeS 2 thin films”, Journal of Physics: Condensed Matter, vol. 6, no. 46, pp. 10177 - 10183, 1994.
Miscellaneous
W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.