Biblio

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Miscellaneous
W. L. Bailey, Coleman, M. G., Harris, C. B., and Lesk, I. A., “United States Patent: 4137123 - Texture etching of silicon: method”. 1979.
Journal Article
D. Macdonald, Sinton, R. A., and Cuevas, A., “On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon”, Journal of Applied Physics, vol. 89, pp. 2772-2778, 2001.
M. J. Stocks, Carr, A. J., and Blakers, A. W., “Texturing of polycrystalline silicon”, Solar Energy Materials and Solar Cells, vol. 40, pp. 33 - 42, 1996.
M. Calixto-Rodriguez, Martinez, H., Sanchez-Juarez, A., Campos-Alvarez, J., Tiburcio-Silver, A., and Calixto, M. E., “Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis”, Thin Solid Films, vol. 517, no. 7, pp. 2497 - 2499, 2009.
M. Calixto-Rodriguez, Martinez, H., Sanchez-Juarez, A., Campos-Alvarez, J., Tiburcio-Silver, A., and Calixto, M. E., “Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis”, Thin Solid Films, vol. 517, no. 7, pp. 2497 - 2499, 2009.
M. Calixto-Rodriguez, Martinez, H., Sanchez-Juarez, A., Campos-Alvarez, J., Tiburcio-Silver, A., and Calixto, M. E., “Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis”, Thin Solid Films, vol. 517, no. 7, pp. 2497 - 2499, 2009.
A. Cuevas, “The Recombination Parameter J0”, Energy Procedia, vol. 55, pp. 53 - 62, 2014.
T. Feurer et al., “Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications”, Progress in Photovoltaics: Research and Applications, vol. 25, pp. 645–667, 2017.
R. Chandramohan, Sanjeeviraja, C., and Mahalingam, T., “Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications”, physica status solidi (a), vol. 163, no. 2, pp. R11 - R12, 1997.
D. Chauhan, Satsangi, V. R., Dass, S., and Shrivastav, R., “Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water”, Bulletin of Materials Science, vol. 29, p. 709, 2006.
K. Hyun Yoon, Choi, W. Jin, and Kang, D. Heon, “Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate”, Thin Solid Films, vol. 372, pp. 250 - 256, 2000.
W. A. Pliskin and Conrad, E. E., “Nondestructive determination of thickness and refractive index of transparent films”, IBM Journal of Research Devices, vol. 8, pp. 43–51, 1964.
D. M. Chapin, Fuller, C. S., and Pearson, G. L., “A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power”, Journal of Applied Physics, vol. 25, pp. 676-677, 1954.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
P. Campbell and Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
E. Yablonovich and Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
P. Campbell and Green, M. A., “High performance light trapping textures for monocrystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 369 - 375, 2001.
E. M. Logothetis, Kaiser, W. J., Kukkonen, C. A., Faile, S. P., Colella, R., and Gambold, J., “Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor”, Journal of Physics C: Solid State Physics, vol. 12, no. 13, pp. L521 - L526, 1979.
E. M. Logothetis, Kaiser, W. J., Kukkonen, C. A., Faile, S. P., Colella, R., and Gambold, J., “Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor”, Journal of Physics C: Solid State Physics, vol. 12, p. L521, 1979.
C. J. Hages, Carter, N. J., and Agrawal, R., “Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4”, Journal of Applied Physics, vol. 119, no. 1, p. 014505, 2016.
M. J. Kerr, Cuevas, A., and Sinton, R. A., “Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements”, Journal of Applied Physics, vol. 91, p. 399, 2002.
M. J. Kerr and Cuevas, A., “General parameterization of Auger recombination in crystalline silicon”, Journal of Applied Physics, vol. 91, pp. 2473-2480, 2002.
R. Caracas and Gonze, X., “First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se”, Physics and Chemistry of Minerals, vol. 32, no. 4, pp. 295 - 300, 2005.
O. Benhelal, Chahed, A., Laksari, S., Abbar, B., Bouhafs, B., and Aourag, H., “First-principles calculations of the structural, electronic and optical properties of IIA-IV antifluorite compounds”, physica status solidi (b), vol. 242, no. 10, pp. 2022 - 2032, 2005.

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