Biblio

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A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
A
K. Misiakos and Tsamakis, D., “Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K”, Journal of Applied Physics, vol. 74, no. 5, p. 3293, 1993.
B
T. Gokmen, Gunawan, O., Todorov, T. K., and Mitzi, D. B., “Band tailing and efficiency limitation in kesterite solar cells”, Applied Physics Letters, vol. 103, p. 103506, 2013.
C
E. P. S. Tan et al., “Crystallinity and surface effects on Young’s modulus of CuO nanowires”, Applied Physics Letters, vol. 90, no. 16, p. 163112, 2007.
E. P. S. Tan et al., “Crystallinity and surface effects on Young’s modulus of CuO nanowires”, Applied Physics Letters, vol. 90, no. 16, p. 163112, 2007.
D
H. Katagiri et al., “Development of CZTS-based thin film solar cells”, Thin Solid Films, vol. 517, pp. 2455–2460, 2009.
W. Wang et al., “Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency”, Advanced Energy Materials, vol. 4, 2014.
E
D. Rudmann, Bilger, G., Kaelin, M., Haug, F. - J., Zogg, H., and Tiwari, A. N., “Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films”, Thin Solid Films, vol. 431, pp. 37–40, 2003.
H
M. Powalla et al., “High-efficiency Cu(In,Ga)Se2 cells and modules”, Solar energy materials and solar cells, vol. 119, pp. 51–58, 2013.
I
J. Pettersson, Törndahl, T., Platzer-Björkman, C., Hultqvist, A., and Edoff, M., “The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers”, IEEE journal of photovoltaics, vol. 3, pp. 1376–1382, 2013.
S. M. Whittingham and Thompson, A. H., “Intercalation and lattice expansion in titanium disulfide”, The Journal of Chemical Physics, vol. 62, no. 4, p. 1588, 1975.
W. Guang-Pu et al., “Investigation on SnS film by RF sputtering for photovoltaic application”, in 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), Waikoloa, HI, USA, 1994.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
L
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
N
M. Parhizkar et al., “Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers”, Colloids and Surfaces A: Physicochemical and Engineering Aspects, vol. 257-258, pp. 277 - 282, 2005.
O
S. Adachi and Taguchi, T., “Optical properties of ZnSe”, Physical Review B, vol. 43, no. 12, pp. 9569 - 9577, 1991.
P
D. B. Mitzi, Gunawan, O., Todorov, T. K., Wang, K., and Guha, S., “The path towards a high-performance solution-processed kesterite solar cell”, Solar Energy Materials and Solar Cells, vol. 95, pp. 1421 - 1436, 2011.
B. Thomas, Ellmer, K., Bohne, W., Röhrich, J., Kunst, M., and Tributsch, H., “Photoeffects in cobalt doped pyrite (FeS 2 ) films”, Solid State Communications, vol. 111, no. 5, pp. 235 - 240, 1999.
B. Thomas, Ellmer, K., Bohne, W., Röhrich, J., Kunst, M., and Tributsch, H., “Photoeffects in cobalt doped pyrite (FeS 2 ) films”, Solid State Communications, vol. 111, no. 5, pp. 235 - 240, 1999.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., and Uraoka, Y., “Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence”, Applied Physics Letters, vol. 86, p. 262108, 2005.
C. D. Lokhande et al., “Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films”, Thin Solid Films, vol. 330, no. 2, pp. 70 - 75, 1998.
T. Feurer et al., “Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications”, Progress in Photovoltaics: Research and Applications, vol. 25, pp. 645–667, 2017.
R
W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.
S
J. C. C. Tsai, “Shallow phosphorus diffusion profiles in silicon”, Proceedings of the IEEE, vol. 57, no. 9, pp. 1499 - 1506, 1969.

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