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1
S. Narayanan et al., 18% efficient polycrystalline silicon solar cells, Twenty First IEEE Photovoltaic Specialists Conference, vol. 1. pp. 678-680, 1990.
7
P. J. Verlinden, Swanson, R. M., and Crane, R. A., 7000 High Efficiency Cells for a Dream, Progress in Photovoltaics: Research and Applications, vol. 2, pp. 143 - 152, 1994.
E
S. Pizzini and Calligarich, C., On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon, Journal of The Electrochemical Society, vol. 131, no. 9, p. 2128, 1984.
J. Czochralski, Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle, Zeitschrift für physikalische Chemie, vol. 92, pp. 219–221, 1918.
L. E. Conroy and Park, K. Chang, Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide, Inorganic Chemistry, vol. 7, no. 3, pp. 459 - 463, 1968.
S. Lehner, Ciobanu, M., Savage, K., and Cliffel, D. E., Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni, Journal of The Electrochemical Society, vol. 155, no. 5, p. P61, 2008.
S. Lehner, Ciobanu, M., Savage, K., and Cliffel, D. E., Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni, Journal of The Electrochemical Society, vol. 155, no. 5, p. P61, 2008.
Y. - N. Xu and Ching, W., Electronic, optical, and structural properties of some wurtzite crystals, Physical Review B, vol. 48, no. 7, pp. 4335 - 4351, 1993.
H. C. Card and Yang, E. S., Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination, IEEE Transactions on Electron Devices, vol. ED-24, pp. 397-402, 1977.
F. Vazquez, Forman, R., and Cardona, M., Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn, Physical Review, vol. 176, no. 3, pp. 905 - 908, 1968.
G
P. J. Cousins et al., Gen III: Improved Performance at Lower Cost, in 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.

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